IP Library Granted Patent US 10,633,754
Granted Patent B2
US 10,633,754 · App. 13/935,768 · Granted Apr 28, 2020

Methods and apparatuses for mitigating tin whisker growth on tin and tin-plated surfaces by doping tin with germanium

Inventors: Thomas A. Woodrow, III (Lakeside, TX); Jean A. Nielsen (Kent, WA)
Assignee: THE BOEING COMPANY
C25D3/30C25D3/60C25D5/54Y10T428/12715
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Quick Facts
Patent No.
US 10,633,754
App. No.
13/935,768
Granted
Apr 28, 2020
Kind
B2
Abstract

The present disclosure generally relates to the field of tin electroplating. More specifically, the present disclosure relates to methods for mitigating tin whisker formation on tin-plated films and tin-plated surfaces by doping the tin with germanium.

Claims (15)

1. A method for mitigating tin whisker growth on a tin-plated substrate surface comprising the steps of:

preparing a tin and germanium-containing solution consisting of an amount of:

a water solubilized germanium-containing compound consisting of 0.1479 g of GeO 2 in an aqueous sodium hydroxide (NaOH) solution,

a water soluble tin-containing compound consisting of 0.340 g of tin (II) sulfate,

water, and

a complexing agent consisting of 0.3919 g of d,l-tartaric acid;

immersing an anodic electrode into the tin and germanium-containing solution;

immersing a cathodic substrate into the tin and germanium-containing solution, said cathodic substrate comprising a cathodic substrate surface;

connecting the anodic electrode and the cathodic substrate to an electrical power source capable of providing an electrical current;

activating the electrical power source to provide the electrical current to the anodic electrode, the cathodic substrate and the tin and germanium-containing solution; and

co-depositing for 8 minutes, using a voltage of 0.995 volts, a current of 14 milliamps, and the tin and germanium-containing solution at a temperature of 18° C., an amount of germanium and an amount of tin onto the cathodic substrate surface to form a germanium-doped tin plated film having a thickness of from about 1 to about 10 microns;

wherein the amount of co-deposited germanium in the germanium-doped tin plated film on the cathodic substrate surface is from about 0.5 to about 5% by weight germanium; and

wherein tin whisker growth on the germanium-doped tin plated film on the cathodic substrate surface is mitigated.

2. The method of claim 1 , wherein preparing the tin and germanium-containing solution comprises adding the water soluable tin-containing compound consisting of the tin (II) sulfate to the water solubilized germanium-containing compound in the aqueous sodium hydroxide (NaOH) solution to form the tin and germanium-containing solution.

3. The method of claim 1 , further comprising the step of: adding an amount of a surfactant/leveling agent to the tin and germanium-containing solution.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 10, 2013
From: WOODROW, THOMAS A., III; NIELSEN, JEAN A.
To: THE BOEING COMPANY
Reel/Frame 030764/0897 →
Continuity (1)
Related Publication 20150010774A1 · Jan 8, 2015