Semiconductor light-emitting device
A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a magnetic layer on the light-emitting structure. The magnetic layer may have at least one magnetization direction that is parallel to an upper surface of the active layer. The magnetic layer may generate a magnetic field that is parallel to the upper surface of the active layer. The magnetic layer may include multiple structures that may have different magnetization directions. Multiple magnetic layers may be included on the light-emitting structure. A magnetic layer may be on a contact electrode. A magnetic layer may be isolated from a pad electrode.
1. A semiconductor light-emitting device, comprising:
a light-emitting structure, the light-emitting structure including a plurality of layers, the plurality of layers including
a first conductivity-type semiconductor layer,
an active layer, and
a second conductivity-type semiconductor layer;
a first contact electrode coupled to the first conductivity-type semiconductor layer;
a second contact electrode coupled to the second conductivity-type semiconductor layer; and
an insulating layer on the light-emitting structure, the insulating layer including a magnetic layer, the magnetic layer including,
a first magnetic layer on the first conductivity-type semiconductor layer, and
a second magnetic layer on the second conductivity-type semiconductor layer, the first magnetic layer insulated from the second magnetic layer by at least a portion of the insulating layer,
wherein the second magnetic layer includes a plurality of structures, the plurality of structures at least partially defining a pattern, the plurality of structures include at least one structure and at least one remaining structure, the at least one structure has a first magnetization direction, the at least one remaining structure has a second magnetization direction, and the first and second magnetization directions are different magnetization directions, both the first and second magnetization directions substantially parallel to an upper surface of the active layer.
2. The semiconductor light-emitting device of claim 1 , wherein
the second magnetic layer is on the second contact electrode.
3. The semiconductor light-emitting device of claim 1 , wherein
the semiconductor light-emitting device further includes first and second pad electrodes coupled to the first and second contact electrodes, respectively, each of the first and second pad electrodes including coplanar upper surfaces;
the first magnetic layer is on the first contact electrode and is between the first contact electrode and the first pad electrode.
4. The semiconductor light-emitting device of claim 1 , wherein the first magnetic layer is on the first conductivity-type semiconductor layer and adjacent to a side surface of the first contact electrode.
5. The semiconductor light-emitting device of claim 1 , wherein
the semiconductor light-emitting device further includes first and second pad electrodes coupled to the first and second contact electrodes, respectively, each of the first and second pad electrodes including coplanar upper surfaces;
the first pad electrode is coupled to the first contact electrode through at least a separate portion of the insulating layer; and
the second pad electrode is coupled to the second contact electrode through at least a further separate portion of the insulating layer.
6. The semiconductor light-emitting device of claim 1 , wherein,
the semiconductor light-emitting device further includes first and second pad electrodes coupled to the first and second contact electrodes, respectively, each of the first and second pad electrodes including coplanar upper surfaces;
at least a portion of the magnetic layer is between the second pad electrode and the second contact electrode.
7. A semiconductor light-emitting device, comprising:
a light-emitting structure including a plurality of layers, at least a portion of the light-emitting structure defining a trench, the plurality of layers including
a first conductivity-type semiconductor layer,
an active layer, and
a second conductivity-type semiconductor layer;
a reflective metal layer on the portion of the light-emitting structure defining the trench;
first and second contact electrodes coupled to separate, respective ones of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; and
a magnetic layer, the magnetic layer including a first magnetic layer on the reflective metal layer and a second magnetic layer on at least one of the first and second contact electrodes,
wherein the second magnetic layer includes a plurality of structures, the plurality of structures at least partially defining a pattern, the plurality of structures include at least one structure and at least one remaining structure, the at least one structure has a first magnetization direction, the at least one remaining structure has a second magnetization direction, and the first and second magnetization directions are different magnetization directions, both the first and second magnetization directions substantially parallel to an upper surface of the active layer.
8. The semiconductor light-emitting device of claim 7 , wherein
the first magnetic layer and the light-emitting structure are spaced apart according to a first distance;
the second magnetic layer and the light-emitting structure are spaced apart according to a second distance; and
the first distance is smaller than the second distance.
9. The semiconductor light-emitting device of claim 7 , wherein
the first magnetic layer and the first conductivity-type semiconductor layer are spaced apart according to a first distance;
the second magnetic layer and the second conductivity-type semiconductor layer are spaced apart according to a second distance; and
the first distance is smaller than the second distance.
10. The semiconductor light-emitting device of claim 7 , wherein
the first contact electrode has a first thickness;
the second contact electrode has a second thickness; and
the first thickness is smaller than the second thickness.
11. A semiconductor light-emitting device, comprising:
a light-emitting structure including an active layer, the light-emitting structure configured to induce a current in a first direction through the active layer, the first direction being substantially perpendicular to an upper surface of the active layer; and
a magnetic layer on the light-emitting structure, the magnetic layer including first and second magnetic layers on separate, first and second conductivity-type semiconductor layers of the light-emitting structure. respectively, the first magnetic layer insulated from the second magnetic layer by at least a portion of an insulating layer,
wherein the first and second magnetic layers are each configured to generate a magnetic field having a magnetic field direction at the active layer, the magnetic field direction at the active layer being substantially parallel to the upper surface of the active layer,
wherein the second magnetic layer includes a plurality of structures that at least partially define a pattern, the plurality of structures including at least one structure and at least one remaining structure, the at least one structure configured to generate a magnetic field having a first magnetic field direction at the active layer, the at least one remaining structure configured to generate a magnetic field having a second magnetic field direction at the active layer, the first and second magnetic field directions at the active layer being substantially parallel to the upper surface of the active layer, and the first and second magnetic field directions at the active layer being different directions.