Core wire holder and method for producing silicon
A core wire holder 3 attached on an electrode 2 placed on a bottom panel of a device 20 for producing silicon by Siemens process includes a silicon core wire holding portion 9 being generally circular truncated cone-shaped, and holding and energizing a silicon core wire 4 . The silicon core wire holding portion 9 includes a generally circular truncated cone having an upper surface formed with a silicon core wire insertion hole 7 for holding the silicon core wire 4 , and the silicon core wire holding portion 9 includes an upper surface and a side surface, which form a ridge having a curved surface and serving as a chamfered portion 8.
1. A core wire holder attached on a metal electrode placed on a bottom panel of a device for producing silicon by Siemens process, the core wire holder comprising:
a silicon core wire holding portion being generally circular truncated cone-shaped, and configured to hold and energize a silicon core wire, wherein:
the silicon core wire holding portion is inscribed and includes a generally circular truncated cone having an upper surface formed with a silicon core wire insertion hole for holding the silicon core wire,
the circular truncated cone includes an upper surface in a shape of a first circle with a diameter “a”,
the circular truncated cone includes a bottom surface in a shape of a second circle with a diameter “b”,
the circular truncated cone has a height “h”,
the silicon core wire holding portion includes a chamfered portion having a curved surface formed on a ridge formed by the upper surface and a side surface of the silicon core wire holding portion,
the curved surface has a radius “R” of curvature, and
“a”, “b”, “h”, and “R” satisfy the following conditions: a<b, a≤h≤(15*a), and (a/10)≤R≤(2*b) such that a possibility in growth of cracking of a silicon rod formed by depositing polysilicon on the silicon core wire is reduced.
2. The core wire holder of claim 1 , further comprising:
a cylindrical-shaped or circular truncated cone-shaped base portion.
3. The core wire holder of claim 1 , wherein the core wire holder is made of carbon.
4. The core wire holder of claim 1 , wherein a material for the core wire holder has a coefficient of thermal expansion at a ratio of 0.7-1.7, and wherein a coefficient of thermal expansion of the silicon rod is 1.
5. A method for producing polysilicon by Siemens process, comprising:
using the core wire holder of claim 1 , and
depositing the polysilicon on the silicon core wire.
6. A method for producing polysilicon by Siemens process, comprising:
using the core wire holder of claim 2 , and
depositing the polysilicon on the silicon core wire.
7. A method for producing polysilicon by Siemens process, comprising:
using the core wire holder of claim 3 , and
depositing the polysilicon on the silicon core wire.
8. A method for producing polysilicon by Siemens process, comprising:
using the core wire holder of claim 4 , and
depositing the polysilicon on the silicon core wire.