Method of controlling reticle masking blade positioning to minimize impact on critical dimension uniformity and device for controlling reticle masking blade positioning

1. A method of controlling reticle masking blade positioning to minimize the impact on critical dimension uniformity, comprising:

determining a target location of two reticle masking blades relative to a reflective reticle having a reticle pattern;

positioning the reticle masking blades at the target location so that the two reticle masking blades are arranged to form a substantially rectangular opening exposing the reticle pattern;

monitoring a position of the reticle masking blades during an imaging operation;

comparing the position of the reticle masking blades with the target location;

adjusting the position of the reticle masking blades if the position of the reticle masking blades are outside a tolerance of the target location; and

adjusting the position of the masking blades to adjust the size of a penumbra of radiation reflected off the reflective reticle.

2. The method according to claim 1 , wherein the monitoring is performed using a position sensor.

3. The method according to claim 1 , wherein the monitoring is performed using laser interferometry.

4. The method according to claim 1 , wherein the adjusting the position of the reticle masking blades comprises activation of actuators mechanically coupled to the reticle masking blades.

5. The method according to claim 1 , wherein the monitoring the position of the reticle masking blades, the comparing the position of the reticle masking blades, and the adjusting the position of the reticle masking blades are performed using a controller.

6. The method according to claim 1 , wherein the controlling the masking blades positioning is performed while implementing optical proximity correction.

7. The method according to claim 1 , wherein the adjusting the reticle masking blades comprises adjusting the reticle masking blades in a direction parallel to a main surface of the reflective reticle or adjusting the reticle masking blades in a direction perpendicular to the main surface of the reflective reticle.

8. The method according to claim 1 , wherein the adjusting the reticle masking blades comprises adjusting the reticle masking blades in a direction perpendicular to a main surface of the reflective reticle.

9. The method according to claim 1 , further comprising exposing a photoresist-coated substrate to radiation reflected off the reflective reticle, wherein the substantially rectangular opening exposes an entire patterned portion of the reflective reticle.

10. A device for controlling an exposure area in an extreme ultraviolet lithography tool, comprising:

an extreme ultraviolet radiation source;

a moveable stage for supporting a photoresist coated substrate;

a reticle having a reticle pattern to be imaged in the photoresist;

two reticle masking blades arranged to form a substantially rectangular opening exposing the reticle pattern located between the extreme ultraviolet radiation source and a reflective reticle support stage;

actuators coupled with the reticle masking blades configured to move the reticle masking blades,

wherein the actuators are configured to move the reticle masking blades in a direction parallel to a main surface of the reflective reticle support stage and in a direction perpendicular to a main surface of the reflective reticle support stage; and

a position sensor configured to determine positions of the reticle masking blades.

11. The device of claim 10 , further comprising a controller configured to control the position sensor and the actuators.

12. The device of claim 10 , wherein the position sensor includes a laser interferometer.

13. The device of claim 10 , wherein the position sensor is configured to direct a light beam to the reticle masking blades and the reticle masking blades are configured to reflect the light beam from the position sensor.

14. The device of claim 10 , further comprising a pellicle located between the reticle masking blades and the reflective reticle support stage.

15. The device of claim 10 , wherein the controller is further configured to individually control a position of each reticle masking blade.

16. An extreme ultraviolet lithography tool, comprising:

an extreme ultraviolet radiation source;

a moveable stage for supporting a photoresist coated substrate;

a reticle having a reticle pattern to be imaged in the photoresist;

two reticle masking blades arranged to form a substantially rectangular opening exposing the reticle pattern located between the extreme ultraviolet radiation source and a reflective reticle support stage;

a position sensor configured to monitor a position of the reticle masking blades during a selective photoresist exposing operation;

actuators configured to adjust the position of the reticle masking blades if the reticle masking blades are outside a set tolerance range,

wherein the actuators are configured to move the reticle masking blades in a direction parallel to a main surface of the movable stage and in a direction perpendicular to the main surface of the movable stage; and

a controller configured to determine whether the reticle masking blades are located within the set tolerance range, and configured to control the actuators.

17. The extreme ultraviolet lithography tool of claim 16 , wherein the controller is configured to control the position sensor, compare the position of the reticle masking blades, and adjust the position of the reticle masking blades.

18. The extreme ultraviolet lithography tool of claim 17 , wherein the controller is further configured to control the position of each reticle masking blade.

19. The extreme ultraviolet lithography tool of claim 16 , further comprising a pellicle located between the reticle masking blades and the reflective reticle support stage.

20. The extreme ultraviolet lithography tool of claim 16 , further comprising a plurality of optics configured to direct the extreme ultraviolet radiation toward the movable stage.