Electrophotographic photosensitive member and method for producing electrophotographic photosensitive member
The present invention provides an electrophotographic photosensitive member which has a substrate, a photoconductive layer and a surface layer formed from hydrogenated amorphous silicon carbide in this order. The average value of the carbon content (C/(C+Si)) of the surface layer formed from the hydrogenated amorphous silicon carbide is set at 0.90 or more and less than 1.00, and the average value of the hydrogen content (H/(H+C+Si)) is set at 0.40 or less; and when the average value of the ratios of the sum of a Si—O bond and an O—Si—O bond in the outermost surface region that constitutes a range within a depth of 5 nm or less from the outermost surface of the surface layer is represented by a, and an average value of the silicon content (Si/(C+Si)) is represented by b, 0.015≤a*b≤0.090 holds.
1. An electrophotographic photosensitive member having a substrate, a photoconductive layer, and a surface layer formed from hydrogenated amorphous silicon carbide, in this order, wherein
an average value of ratios (C/(C+Si)) of a number (C) of carbon atoms to a sum of a number (Si) of silicon atoms and the number (C) of carbon atoms in the surface layer is 0.90 or more and less than 1.00, and
an average value of ratios (H/(H+C+Si)) of a number (H) of hydrogen atoms to a sum of the number (H) of hydrogen atoms, the number (C) of carbon atoms and the number (Si) of silicon atoms in the surface layer is 0.40 or less; and
when an average value of ratios of a sum of a Si—O bond and an O—Si—O bond to a sum of Si-related bonds (sum of a Si—Si bond, a Si—C bond, a Si—O bond and an O—Si—O bond) in an outermost surface region that constitutes a range within a depth of 5 nm or less from the outermost surface of the surface layer is represented by a, and an average value of ratios (Si/(C+Si)) of the number (Si) of silicon atoms to a sum of the number (Si) of the silicon atoms and the number (C) of carbon atoms in the surface layer is represented by b, 0.015≤a*b≤0.090 holds.
2. The electrophotographic photosensitive member according to claim 1 , wherein a maximum value of ratios (sp2/(sp2+sp3)) of an sp2 bond to a sum of the sp2 bond and an sp3 bond each between the carbon atoms in the outermost surface region is 0.50 or less.
3. The electrophotographic photosensitive member according to claim 1 , wherein a layer thickness of the surface layer is 20 nm or more and 500 nm or less.
4. The electrophotographic photosensitive member according to claim 1 , wherein the average value of the ratios (H/(H+C+Si)) of the number (H) of hydrogen atoms to the sum of the number (H) of hydrogen atoms, the number (C) of the carbon atoms and the number (Si) of silicon atoms in the surface layer is 0.35 or less.
5. A method for producing an electrophotographic photosensitive member including a layer formed from an amorphous material, comprising:
first, placing a cylindrical substrate having an electroconductive surface in a vacuum sealable reaction furnace which is connected to an evacuation unit and is provided with a source gas supply unit, decomposing a source gas using a high-frequency power, and depositing a photoconductive layer formed from an amorphous material on the substrate;
second, depositing the surface layer formed from hydrogenated amorphous silicon carbide on the photoconductive layer; and
third, subjecting the surface layer to oxidation treatment.
6. The method for producing the electrophotographic photosensitive member according to claim 5 , wherein the oxidation treatment is treatment of heating the surface layer in an atmosphere containing oxygen.
7. The method for producing the electrophotographic photosensitive member according to claim 5 , wherein the oxidation treatment is treatment of subjecting the surface layer to plasma treatment in an atmosphere containing oxygen.
8. The method for producing the electrophotographic photosensitive member according to claim 6 , wherein the oxidation treatment is performed in a reaction furnace different from a reaction furnace in which the deposition treatment has been performed.