Method of generating layout and method of manufacturing semiconductor devices using same

1. A method of generating a layout, the method comprising:

receiving a design layout of a semiconductor device including active fins;

extracting a design rule of the active fins from the design layout;

forming fin lines completely overlapping the active fins such that the fin lines have a length that is greater than a length of the active fins in a first direction, wherein the fin lines continuously extend from a position directly adjacent to one edge of a layout region of the semiconductor device toward a position directly adjacent to another edge, and are formed in an entirety of the layout region of the semiconductor device;

forming a mandrel pattern layout in an entirety of the layout region of the semiconductor device, using the fin lines; and

forming a cut pattern layout in the entirety of the layout region of the semiconductor device, using the active fins.

2. The method as claimed in claim 1 , wherein forming the fin lines includes:

setting a reference point within the layout region of the semiconductor device;

forming a group of fin lines meeting the design rule from the reference point; and

additionally forming other groups of fin lines in the layout region of the semiconductor device, while following the design rule.

3. The method as claimed in claim 2 , wherein the reference point:

is positioned collinear to any one of the active fins, and

is set as a point away from the one edge of the layout region of the semiconductor device by a predetermined distance.

4. The method as claimed in claim 2 , wherein:

each group of fin lines includes four fin lines, and

the four fin lines in each group have the same length.

5. The method as claimed in claim 4 , wherein:

forming the mandrel pattern layout includes forming, for each group, a mandrel pattern having a same length as the fin lines, and

the mandrel pattern overlaps two of the active fins positioned in a central portion of each group.

6. The method as claimed in claim 2 , wherein:

each group of fin lines includes two fin lines, and

the two fin lines in each group have the same length.

7. The method as claimed in claim 6 , wherein:

forming the mandrel pattern layout includes forming, for each group, a mandrel pattern having a same length as the fin lines, and

the mandrel pattern is disposed in a region between two of the fin lines.

8. A method of forming a layout, the method comprising:

receiving a design layout of a semiconductor device, the semiconductor device including a first region including first active fins extending linearly in a first direction and spaced apart from one another by a first distance in a second direction crossing the first direction and a second region including second active fins extending linearly in the first direction and spaced apart from one another by a second distance in the second direction, the second distance being different from the first distance;

extracting a first design rule of the first active fins from the design layout;

forming first fin lines completely overlapping the first active fins included in the first region such that the first fin lines have a greater length than the first active fins in the first direction, wherein the first fin lines continuously extend from a position adjacent to one edge of the first region toward another edge, and ends of at least some of the first fin lines are spaced apart from a boundary of the second region;

forming a first mandrel pattern layout on an entirety of the first region, using the first fin lines; and

forming a first cut pattern layout on the entirety of the first region, using the first active fins.

9. The method as claimed in claim 8 , further comprising:

extracting a second design rule of the second active fins from the design layout;

forming second fin lines completely overlapping the second active fins included in the second region such that the second fin lines have a greater length than the second active fins, wherein the second fin lines continuously extend from a position adjacent to one edge of the second region toward another edge;

forming a second mandrel pattern layout on an entirety of the second region, using the second fin lines; and

forming a second cut pattern layout on the entirety of the second region, using the second active fins.

10. The method as claimed in claim 8 , wherein forming the first fin lines includes:

setting a reference point within the first region of the semiconductor device;

forming some of the first fin lines meeting the first design rule from the reference point; and

additionally forming a remainder of the first fin lines in the first region of the semiconductor device, according to the first design rule.

11. The method as claimed in claim 10 , wherein the reference point:

is positioned collinear to any one of the first active fins, and

is set as a point away from the one edge of the first region of the semiconductor device by a predetermined distance.

12. The method as claimed in claim 8 , wherein:

the first fin lines are divided into a plurality of groups such that each of the groups includes four first fin lines, and

the four first fin lines in each group have a same length.

13. The method of claim 12 , wherein:

forming the first mandrel pattern layout includes forming, for each group, a first mandrel pattern having a same length as the first fin lines,

the first mandrel pattern overlaps two of the first fin lines positioned in a central portion of each group.

14. The method as claimed in claim 9 , wherein forming the second fin lines includes:

setting a reference point within the second region of the semiconductor device;

forming some of the second fin lines meeting the second design rule from the reference point; and

additionally forming a remainder of the second fin lines in the second region of the semiconductor device, according to the second design rule.

15. The method as claimed in claim 14 , wherein the reference point:

is positioned collinear to any one of the second active fins, and

is set as a point away from the one edge of the second region of the semiconductor device by a predetermined distance.

16. The method as claimed in claim 9 , wherein:

the second fin lines are divided into a plurality of groups,

each of the groups includes two second fin lines, and

the two second fin lines in each group have a same length.

17. The method as claimed in claim 16 , wherein:

forming the second mandrel pattern layout includes forming, for each group, a second mandrel pattern having a same length as the second fin lines,

the second mandrel pattern is disposed in a region between the two second fin lines.

18. A method of manufacturing a semiconductor device, the method comprising:

receiving a design layout of the semiconductor device including active fins;

extracting a design rule of the active fins from the design layout;

forming, in the semiconductor device, fin lines overlapping the active fins and extending to have a greater length than the active fins, wherein the fin lines continuously extend from a position adjacent to one edge of the semiconductor device toward another edge;

forming a mandrel pattern layout, using the fin lines;

forming a cut pattern layout, using the active fins;

forming a first photomask with the mandrel pattern layout;

forming a second photomask with the cut pattern layout; and

forming the active fins by patterning a substrate, using the first photomask and the second photomask,

wherein forming the active fins by patterning the substrate includes:

sequentially stacking a first sacrificial layer and a second sacrificial layer on the substrate;

forming first mandrels on the first sacrificial layer by patterning the second sacrificial layer, using the first photomask;

forming first spacers on side walls of the first mandrels;

removing the first mandrels;

forming second mandrels by etching the first sacrificial layer, using the first spacers as etching masks;

forming second spacers on side walls of the second mandrels;

removing the second mandrels;

forming the continuously extending fin lines by patterning the substrate, using the second spacers; and

forming the active fins and dummy fins by cutting the fin lines, using the second photomask.

19. The method as claimed in claim 18 , wherein forming the fin lines includes:

setting a reference point within the semiconductor device;

forming some of the fin lines meeting the design rule from the reference point; and

additionally forming a remainder of the fin lines in the semiconductor device, according to the design rule.