Method for producing magnetic memory comprising magnetic tunnel junction element

1. A method for producing a magnetic memory including a magnetic tunnel junction element, the method comprising:

forming a magnetic film in which a non-magnetic layer is disposed between a first magnetic layer and a second magnetic layer on a substrate provided with an electrode layer, and forming a hard mask on the magnetic film;

performing a magnetic field annealing treatment on the substrate at a first treatment temperature in a state where a magnetic field is applied in a direction perpendicular to a film surface of the first magnetic layer or the second magnetic layer in a vacuum;

performing etching treatment on the magnetic film formed on the substrate to form the magnetic tunnel junction element having a pattern;

forming a protective film protecting the magnetic tunnel junction element formed on the substrate, the protective film formed adjacent to a side surface of the magnetic tunnel junction element and the hard mask;

forming a constituent element of the magnetic memory on the substrate, on which the protective film has been formed, and generating a thermal history, after the forming the protective film; and

after generating the thermal history, performing a non-magnetic-field annealing treatment at a second treatment temperature lower than the first treatment temperature on the substrate on which the protective film has been formed in an annealing treatment chamber, in vacuum or inert gas, in a state in which no magnetic field is applied.

2. The method for producing a magnetic memory including a magnetic tunnel junction element according to claim 1 , wherein

in the forming the constituent element of the magnetic memory, a lower electrode having a pattern by implementing etching treatment on the electrode layer provided on the substrate is formed, and

the non-magnetic-field annealing treatment is performed on the substrate on which the lower electrode has been formed.

3. The method for producing a magnetic memory including a magnetic tunnel junction element according to claim 1 , wherein

in the forming the constituent element of the magnetic memory, an interlayer film is formed, and

the non-magnetic-field annealing treatment is performed on the substrate on which the interlayer film has been formed.

4. The method for producing a magnetic memory including a magnetic tunnel junction element according to claim 1 , wherein

in the forming the constituent element of the magnetic memory, an upper electrode adjacent to the magnetic tunnel junction element is formed, and

the non-magnetic-field annealing treatment is performed on the substrate on which the upper electrode has been formed.

5. The method for producing a magnetic memory including a magnetic tunnel junction element according to claim 1 , wherein

in the forming the constituent element of the magnetic memory, a packaging treatment on a chip-shaped substrate including the magnetic tunnel junction element is performed, and

the non-magnetic-field annealing treatment is performed on the chip-shaped substrate on which the packaging treatment has been performed.

6. The method for producing a magnetic memory including a magnetic tunnel junction element according to claim 1 , wherein immediately before the non-magnetic field annealing treatment is performed, an annealing treatment object is cooled via natural cooling or forced cooling to a room temperature state.

7. The method for producing a magnetic memory including a magnetic tunnel junction element according to claim 1 , wherein the second treatment temperature is 200° C. or more and less than 400° C.

8. The method for producing a magnetic memory including a magnetic tunnel junction element according to claim 2 , wherein

in the forming the constituent element of the magnetic memory, an interlayer film is formed, and

the non-magnetic-field annealing treatment is performed on the substrate on which the interlayer film has been formed.

9. The method for producing a magnetic memory including a magnetic tunnel junction element according to claim 8 , wherein

in the forming the constituent element of the magnetic memory, an upper electrode adjacent to the magnetic tunnel junction element is formed, and

the non-magnetic-field annealing treatment is performed on the substrate on which the upper electrode has been formed.

10. The method for producing a magnetic memory including a magnetic tunnel junction element according to claim 9 , wherein

in the forming the constituent element of the magnetic memory, a packaging treatment on a chip-shaped substrate including the magnetic tunnel junction element is performed, and

the non-magnetic-field annealing treatment is performed on the chip-shaped substrate on which the packaging treatment has been performed.

11. The method for producing a magnetic memory including a magnetic tunnel junction element according to claim 10 , wherein immediately before the non-magnetic field annealing treatment is performed, an annealing treatment object is cooled via natural cooling or forced cooling to a room temperature state.

12. The method for producing a magnetic memory including a magnetic tunnel junction element according to claim 11 , wherein the second treatment temperature is 200° C. or more and less than 400° C.

13. The method for producing a magnetic memory including a magnetic tunnel junction element according to claim 4 , wherein immediately before the non-magnetic field annealing treatment is performed, an annealing treatment object is cooled via natural cooling or forced cooling to a room temperature state.

14. The method for producing a magnetic memory including a magnetic tunnel junction element according to claim 13 , wherein the second treatment temperature is 200° C. or more and less than 400° C.

15. The method for producing a magnetic memory including a magnetic tunnel junction element according to claim 1 , wherein the protective film comprises SiN.

16. A method for producing a magnetic memory including a magnetic tunnel junction element, the method comprising:

forming a magnetic film in which a non-magnetic layer is disposed between a first magnetic layer and a second magnetic layer on a substrate provided with an electrode layer;

performing a magnetic field annealing treatment on the substrate at a first treatment temperature in a state where a magnetic field is applied in a direction perpendicular to a film surface of the first magnetic layer or the second magnetic layer in a vacuum;

performing etching treatment on the magnetic film formed on the substrate to form the magnetic tunnel junction element having a pattern;

forming a protective film protecting the magnetic tunnel junction element formed on the substrate;

forming a constituent element of the magnetic memory on the substrate, on which the protective film has been formed, and generating a thermal history, after the forming the protective film; and

after generating the thermal history, performing a non-magnetic-field annealing treatment at a second treatment temperature lower than the first treatment temperature on the substrate on which the protective film has been formed in an annealing treatment chamber, in vacuum or inert gas, in a state in which no magnetic field is applied,

wherein the protective film comprises SiN.