Surface acoustic wave device
A surface acoustic wave device includes a piezoelectric substrate, an IDT electrode that is provided on the piezoelectric substrate and includes combtooth-shaped electrode fingers, and a wiring electrode that is connected to the IDT electrode. A line width of the electrode fingers at a lower edge thereof and a line width of the electrode fingers at an upper edge thereof in a cross section of the electrode fingers that is perpendicular or substantially perpendicular to a longitudinal direction of the electrode fingers is smaller than a maximum line width of the electrode fingers.
1. A surface acoustic wave device comprising:
a piezoelectric substrate;
an IDT electrode that is provided on the piezoelectric substrate and includes combtooth-shaped electrode fingers and a busbar; and
a wiring electrode that is connected to the busbar; wherein
at least a portion of the wiring electrode is provided on the busbar;
a line width at a lower edge and a line width at an upper edge in a cross section of each of the electrode fingers that is perpendicular or substantially perpendicular to a longitudinal direction of each of the electrode fingers, are smaller than a maximum line width of the electrode finger; and
a line width at a lower edge and a line width at an upper edge in a cross section of the busbar that is perpendicular or substantially perpendicular to a longitudinal direction of each of the electrode fingers, are smaller than a maximum line width of the busbar.
2. The surface acoustic wave device according to claim 1 , wherein a taper is provided at an end surface of the busbar where the wiring electrode is connected.
3. The surface acoustic wave device according to claim 1 , wherein a height of a portion of at least one of the electrode fingers and the busbar from the piezoelectric substrate to the portion of the electrode fingers having the maximum line width is about ⅓ or less a height of the electrode fingers.
4. The surface acoustic wave device according to claim 1 , wherein at least one of the IDT electrode and the busbar includes a plurality of layers including at least a joining layer that contacts the piezoelectric substrate and a main electrode layer that is provided on the joining layer.
5. The surface acoustic wave device according to claim 4 , wherein at least one of the main electrode layer and the busbar is formed of Al, an alloy containing Al, Cu, or an alloy containing Cu.
6. The surface acoustic wave device according to claim 4 , wherein the joining layer is formed of Ti, Cr, Ni or NiCr.
7. The surface acoustic wave device according to claim 1 , wherein at least one of the IDT electrode and the busbar is made of a material that is formed using a liftoff method.
8. The surface acoustic wave device according to claim 1 , wherein the piezoelectric substrate is made of one of 42° Y-cut LiTaO 3 , LiNbO 3 and Li 2 B 4 O 7 .
9. The surface acoustic wave device according to claim 1 , wherein at least one of each of the electrode fingers and the busbar includes only one layer.
10. The surface acoustic wave device according to claim 1 , wherein at least one of each of the electrode fingers and the busbar includes at least three layers.
11. The surface acoustic wave device according to claim 1 , wherein a size of an interval between portions of the electrode fingers that contact the piezoelectric substrate is constant.
12. The surface acoustic wave device according to claim 1 , wherein the wiring electrode includes at least two layers.
13. The surface acoustic wave device according to claim 1 , wherein the wiring electrode includes only one layer.
14. The surface acoustic wave device according to claim 1 , wherein the wiring electrode includes at least three layers.
15. The surface acoustic wave device according to claim 1 , wherein the IDT electrode includes a pair of IDT electrodes.
16. The surface acoustic wave device according to claim 1 , wherein the IDT electrode and the wiring electrode include a different number of layers.