Conductive structure and electronic device comprising same
The present specification provides a conductive structure body and an electronic device comprising the same.
1. A conductive structure body comprising:
a first dielectric layer comprising a first metal compound;
a second dielectric layer comprising a second metal compound provided to face the first dielectric layer; and
a metal layer provided between the first dielectric layer and the second dielectric layer,
wherein the second metal compound comprises an oxide comprising at least one element selected from a group consisting of Nb, Zr, Y, Ta, La, V, Ti, Zn, Ni, B, Si, Al, In, and Sn,
wherein an average light transmittance of the conductive structure body is 80% or more for light having a wavelength of 550 nm, and
wherein the conductive structure body satisfies Equations 1 to 6 given below:
0.12
D
eff
+
(
1
-
0.06
k
eff
_
dielectric
)
+
(
1
-
0.98
(
d
·
k
eff
_
metal
)
)
≤
0.25
[
Equation
1
]
D
eff
=
n
eff
_
550
-
1
n
eff
_
380
-
n
eff
_
450
[
Equation
2
]
n
eff
_
dielectric
2
=
1
2
{
(
n
1
2
-
k
1
2
)
f
1
+
(
n
2
2
-
k
2
2
)
f
2
}
×
(
1
+
{
1
+
[
2
(
n
1
k
1
f
1
+
n
2
k
2
f
2
)
(
n
1
2
-
k
1
2
)
f
1
+
(
n
2
2
-
k
2
2
)
f
2
]
2
}
1
/
2
)
[
Equation
3
]
k
eff
_
dielectric
=
1
n
eff
_
dielectric
(
n
1
k
1
f
1
+
n
2
k
2
f
2
)
[
Equation
4
]
n
eff
_
metal
2
=
1
2
{
(
n
3
2
-
k
3
2
)
f
3
+
(
n
4
2
-
k
4
2
)
f
4
}
×
(
1
+
{
1
+
[
2
(
n
3
k
3
f
3
+
n
4
k
4
f
4
)
(
n
3
2
-
k
3
2
)
f
3
+
(
n
4
2
-
k
4
2
)
f
4
]
2
}
1
/
2
)
[
Equation
5
]
k
eff
_
metal
=
1
n
eff
_
metal
(
n
3
k
3
f
3
+
n
4
k
4
f
4
)
[
Equation
6
]
in Equation 1, D eff represents a dispersion of average refractive indexes of the first dielectric layer and the second dielectric layer obtained by Equations 2 and 3, k eff_dielectric represents an average light extinction coefficient of the first dielectric layer and the second dielectric layer obtained by Equation 4, d represents a total thickness of the first dielectric layer, the second dielectric layer, and the metal layer, k eff_metal represents the average light extinction coefficient of the first dielectric layer, the second dielectric layer, and the metal layer obtained by Equation 5,
in Equation 2, n eff_550 represents the average refractive index of the first dielectric layer and the second dielectric layer obtained by Equation 3 for light having a wavelength of 550 nm, n eff_450 represents the average refractive index of the first dielectric layer and the second dielectric layer obtained by the Equation 3 for light having a wavelength of 450 nm, and n eff_380 represents the average refractive index of the first dielectric layer and the second dielectric layer obtained by Equation 3 for light having a wavelength of 380 nm,
in Equations 3 and 4, n 1 represents a refractive index of the first dielectric layer, n 2 represents the refractive index of the second dielectric layer, k 1 represents the light extinction coefficient of the first dielectric layer, k 2 represents the light extinction coefficient of the second dielectric layer, fi represents a thickness ratio of the first dielectric layer to the first dielectric layer and the second dielectric layer, and f 2 represents the thickness ratio of the second dielectric layer to the first dielectric layer and the second dielectric layer,
in Equations 5 and 6, n 3 represents an average refractive index n eff_dielectric of the first dielectric layer and the second dielectric layer, n 4 represents the refractive index of the metal layer, k 3 represents the average light extinction coefficient k eff_dielectric of the first dielectric layer and the second dielectric layer, k 4 represents the light extinction coefficient of the metal layer, f 3 represents the thickness ratio of the first dielectric layer and the second dielectric layer to the conductive structure body, and f 4 represents the thickness ratio of the metal layer to the conductive structure body, and
each of the average light extinction coefficient k eff_dielectric of the first dielectric layer and the second dielectric layer and the average light extinction coefficient k eff_metal of the first dielectric layer, the second dielectric layer, and the metal layer is a value measured for light having a wavelength of 380 nm.
2. The conductive structure body of claim 1 , wherein the dispersion D eff of the average refractive index of the first dielectric layer and the second dielectric layer is 1.1 or more.
3. The conductive structure body of claim 1 , wherein the average light extinction coefficient k eff_dielectric of the first dielectric layer and the second dielectric layer is 0.1 or less.
4. The conductive structure body of claim 1 , wherein the average light extinction coefficient k eff_metal of the first dielectric layer, the second dielectric layer, and the metal layer is 0.22 or less.
5. The conductive structure body of claim 1 , wherein the total thickness of the first dielectric layer and the second dielectric layer is 40 nm or more and 120 nm or less.
6. The conductive structure body of claim 1 , wherein the thickness of the metal layer is in the range of 5 nm or more and 25 nm or less.
7. The conductive structure body of claim 1 , wherein the metal layer comprises at least one metal selected from a group consisting of Ag, Pt, Al, Ni, Ti, Cu, Pd, P, Zn, Si, Sn, Cd, Ga, Mn, and Co.
8. The conductive structure body of claim 1 , wherein the first metal compound comprises an oxide comprising at least one element selected from a group consisting of Hf, Nb, Zr, Y, Ta, La, V, Ti, Zn, Ni, B, Si, Al, In, and Sn.
9. The conductive structure body of claim 1 , further comprising:
a transparent supporter,
wherein the first dielectric layer is provided on the transparent supporter.
10. The conductive structure body of claim 1 , wherein a change amount in light transmittance of the conductive structure body is 40% or less for light having a wavelength range of 380 nm to 450 nm.
11. The conductive structure body of claim 1 , wherein a surface resistance value of the conductive structure body is 20 Ω/sq or less.
12. A transparent electrode comprising the conductive structure body of claim 1 .
13. An electronic device comprising the conductive structure body of claim 1 .
14. The conductive structure body of claim 1 , wherein the conductive structure body satisfies Equation 1 below:
0.12/D eff +(1−0.06 k eff_dielectric )+(1−0.98 (d·k eff_metal) )≤0.12. [Equation 1]