Method of preparing fiber sensing devices through low-temperature magnetic control sputtering
The present invention relates to a sputtering method, which is placing and fixing a fiber Bragg grating base material in a vacuum sputtering cavity, then pumping in a first gas or a second gas or both in the sputtering cavity and maintaining at the best set temperature, pressure and electric field intensity, sputtering a Cr-, Zr-, Ti- or AlTi-contained metal compound target with a sputtering current to the surface of the fiber grating base material to form a high-temperature-resistant film containing said metal nitride, which can enable the sensor to tolerate a working environment with a temperature of over 500° C. and still maintain its efficiency.
1. A method of preparing a fiber sensing device through low control sputtering comprising:
placing a fiber grating base material in a sputtering cavity wherein the fiber grating base material is fixed on a fixture within a vacuum space of the sputtering cavity, the fixture is positioned on a support within the vacuum space, the fixture is formed having an upper part, a lower part, and a middle part formed between the upper part and the lower part, the upper part and the lower part are both thicker than the middle part, an upper sections of the fiber grating base material is fixed on the upper part of the fixture, a lower section of the fiber grating base material is fixed on the lower part of the fixture, and a spatial space is formed between a middle section of the fiber grating base material and the middle part of the fixture to leave the middle section exposed;
pumping a first gas, a second gas, or both in the sputtering cavity and maintaining a set temperature, a set pressure and an applying voltage; and
sputtering a metal compound target with a sputtering current to a surface of the fiber grating base material to form a film having a heat resistance at 100 to 650° C. thereon while the fixture is rotating in a direction, the support is rotating in a direction, and the rotation direction of the fixture is opposite to that of the support.
2. The method recited in claim 1 wherein said metal compound target is any of a Cr-contained metal compound, a Zr-contained metal compound, a Ti-contained metal compound or a AlTi-contained metal compound.
3. The method recited in claim 1 wherein said first gas is nitrogen (N 2 ).
4. The method recited in claim 1 wherein said second gas is argon (Ar).
5. The method recited in claim 3 wherein a pumping rate of said first gas is 150-160 standard milliliters (sccm) per unit time.
6. The method recited in claim 3 wherein a pumping rate of said second gas is 78-82 standard milliliters (sccm) per unit time.
7. The method recited in claim 1 wherein said set temperature is 100˜200° C.
8. The method recited in claim 1 wherein said set pressure is 0.9×10 −2 to 1.9×10 − 2 Torr.
9. The method recited in claim 1 wherein said applying voltage is 17-23V.
10. The method recited in claim 1 wherein said sputtering current is 65-75 A.
11. The method recited in claim 1 further comprising:
annealing the metal compound target and film having a heat resistance at 100 to 650° C. in the sputtering cavity with the second gas or vacuum.