Narrow band filter with high transmission

1. An image sensor comprising:

a substrate;

a photodetector in the substrate; and

a filter overlying the photodetector and comprising:

a first distributed Bragg reflector (DBR);

a second DBR;

a defect layer between the first and second DBRs; and

a plurality of columnar structures extending through the defect layer, wherein the columnar structures are in a periodic pattern and have a refractive index different than a refractive index of the defect layer.

2. The image sensor according to claim 1 , wherein top surfaces of the columnar structures are even with a top surface of the defect layer, and wherein bottom surfaces of the columnar structures are even with a bottom surface of the defect layer.

3. The image sensor according to claim 1 , wherein the columnar structures extend through the first and second DBRs and the defect layer.

4. The image sensor according to claim 1 , wherein the first or second DBR comprises a plurality of first layers and a plurality of second layers, wherein the second layers are alternatingly stacked with the first layers, and wherein the defect layer has a refractive index different than refractive indexes respectively of the first and second layers.

5. The image sensor according to claim 1 , wherein the first and second DBRs each comprises a plurality of first layers and a plurality of second layers, wherein the second layers are alternatingly stacked with the first layers, wherein the defect layer and the first layers have the same refractive index, wherein the defect layer directly contacts one of the second layers from the first DBR and one of the second layers from the second DBR, and wherein the defect layer has a different thickness than an individual one of the first layers.

6. The image sensor according to claim 1 , wherein the columnar structures comprise a columnar structure with a top layout that is circular or square shaped.

7. The image sensor according to claim 1 , wherein the columnar structures are arranged in a plurality of rows and a plurality of columns.

8. The image sensor according to claim 1 , wherein the columnar structures are arranged in quincunx patterns.

9. The image sensor according to claim 1 , further comprising:

an absorptive color filter overlying the first and second DBRs.

10. The image sensor according to claim 1 , further comprising:

a low or high pass filter overlying the first and second DBRs.

11. An integrated chip comprising:

a substrate;

a plurality of photodetectors in the substrate, wherein the plurality of photodetectors comprises a first photodetector and a second photodetector;

a pair of multilayer films each comprising a plurality of first layers and a plurality of second layers, wherein the first layers are alternatingly stacked with the second layers and have a different refractive index than the second layers;

a defect layer between the multilayer films, wherein the defect layer has a different thickness and/or a different refractive index than the first and second layers;

a first set of columnar structures overlying the first photodetector and extending through the defect layer; and

a second set of columnar structures overlying the second photodetector and extending through the defect layer, wherein the columnar structures of the second set have a different fill factor than the columnar structures of the first set.

12. The integrated chip according to claim 11 , wherein the first and second sets of columnar structures extend through the multilayer films and the defect layer.

13. The Integrated chip according to claim 11 , wherein the first set of columnar structures has a same number of columnar structures as the second set of columnar structures, wherein columnar structures in the first set individually have a first width, and wherein columnar structures in the second set individually have a second width different than the first width.

14. The integrated chip according to claim 11 , wherein the plurality of photodetectors comprises a third photodetector, and wherein the defect layer is devoid of columnar structures directly over the third photodetector.

15. The integrated chip according to claim 11 , wherein the first layers comprise silicon oxide, and wherein the second layers comprise titanium oxide.

16. The integrated chip according to claim 11 , wherein the defect layer comprises an oxide.

17. An image sensor comprising:

a substrate;

a photodetector in the substrate;

a periodic structure comprising a plurality of filter layers that are vertically stacked, wherein the filter layers alternate in a first periodic pattern between a first refractive index and a second refractive index from a top of the periodic structure to a bottom of the periodic structure, and wherein the filter layers alternate in a second periodic pattern between a first filter-layer thickness and a second filter-layer thickness from the top of the periodic structure to the bottom of the periodic structure;

a defect layer buried in the periodic structure and vertically stacked with the filter layers, wherein the defect layer breaks the first periodic pattern and/or the second periodic pattern; and

a plurality of columnar structures in the defect layer, wherein the columnar structures have a refractive index different than that of the defect layer.

18. The image sensor according to claim 17 , wherein the columnar structures are spaced from each other in a third periodic pattern.

19. The image sensor according to claim 18 , wherein the columnar structures are localized to the defect layer.

20. The image sensor according to claim 18 , wherein top surfaces of the columnar structures are even with a top surface of the periodic structure, and wherein bottom surfaces of the columnar structures are even with a bottom surface of the periodic structure.