Semiconductor device and full-wave rectifier circuit
One aspect of a semiconductor device includes a plurality of first structures, in which each of the first structures includes: a first N-type region; a P-type region which is surrounded by the first N-type region; and a second N-type region which is surrounded by the P-type region. The first N-type region and the P-type region are wired, and the plurality of first structures are connected in parallel to form one diode.
1. A semiconductor device, comprising
a plurality of first structures, wherein:
each of the first structures includes:
a first N-type region;
a P-type region which is surrounded by the first N-type region; and
a second N-type region which is surrounded by the P-type region;
a plurality of the first N-type region and a plurality of the P-type region are mutually wired in common between the plurality of first structures as an anode by a wire;
a plurality of the second N-type regions are mutually wired in common between the plurality of first structures as a cathode by the wire; and
the plurality of first structures are connected in parallel to form one diode.
2. The semiconductor device according to claim 1 , wherein
a part of the first N-type region is shared between adjacent first structures in the plurality of first structures.
3. The semiconductor device according to claim 1 , further comprising
four diodes which are connected in a bridge configuration to form a full-wave rectifier circuit, wherein at least one of the four diodes includes the plurality of first structures.
4. The semiconductor device according to claim 3 , wherein the four diodes include the plurality of first structures.
5. The semiconductor device according to claim 3 , wherein a frequency of an input signal to the bridge configuration is 10 MHz or more.
6. A semiconductor device, comprising
a first structure, wherein:
the first structure includes:
a first N-type region;
a first P-type region which is surrounded by the first N-type region; and
a second N-type region which is surrounded by the first P-type region;
a second structure, wherein:
the second structure includes:
a third N-type region;
a second P-type region which is surrounded by the third N-type region; and
a fourth N-type region which is surrounded by the second P-type region;
wherein:
the first N-type region, the first P-type region, the third N-type region and the second P-type region are mutually wired in common between the first structure and the second structure as an anode by a wire;
the second N-type region and the fourth N-type region are mutually wired in common between the first structure and the second structure as a cathode by the wire; and
the first structure and the second structure are connected in parallel to form a diode.
7. The semiconductor device according to claim 6 , wherein a part of the first N-type region and a part of the third N-type region is shared between the first structures and the second structure.
8. The semiconductor device according to claim 6 , further comprising
four diodes which are connected in a bridge configuration to form a full-wave rectifier circuit, wherein at least one of the four diodes includes the first structure and the second structure.
9. The semiconductor device according to claim 8 , wherein the four diodes include the first structure and the second structure.
10. The semiconductor device according to claim 8 , wherein a frequency of an input signal to the bridge configuration is 10 MHz or more.