Method for depositing oxide film by thermal ALD and PEALD

1. A method for depositing an oxide film on a substrate by thermal ALD and PEALD, comprising:

providing a substrate in a reaction chamber;

depositing a first oxide film on the substrate by thermal ALD without a plasma in the reaction chamber; and

without breaking a vacuum, continuously depositing a second oxide film on the first oxide film by PEALD in the reaction chamber,

wherein a cycle of the thermal ALD comprises feeding a precursor, a reactant, and a catalytic gas to the reaction chamber, wherein the catalytic gas is neither a precursor nor a reactant and catalyzes deposition of the first oxide film by increasing reactivity of the reactant and the precursor, and the catalytic gas is fed in a pulse, without overlapping the feeding of the precursor in a pulse, in the cycle to the reaction chamber where the reactant is present.

2. The method according to claim 1 , wherein a cycle of the thermal ALD comprises feeding a precursor to the reaction chamber, said precursor being a gas of at least one compound selected from the group consisting of aminosilane, silylamine, isocyanatesilane, isothonatesilane, inorganic silane, silane-containing hydroxide, and silane-containing alkoxide.

3. The method according to claim 1 , wherein a cycle of the thermal ALD comprises feeding a reactant to the reaction chamber, said reactant being at least one gas selected from the group consisting of H 2 O, ether, alcohol, a mixture of H 2 and O 2 , and H 2 O 2 .

4. The method according to claim 1 , wherein a cycle of the thermal ALD comprises feeding a reactant to the reaction chamber by introducing the reactant to a manifold conduit upstream of a showerhead provided inside the reaction chamber, by introducing the reactant at the showerhead, and/or by introducing the reactant between the showerhead and a susceptor on which the substrate is placed.

5. The method according to claim 1 , wherein a cycle of the PEALD comprises feeding a precursor in a pulse using a carrier gas which continuously flows to the reaction chamber, and continuously feeding a reactant to the reaction chamber.

6. The method according to claim 5 , wherein the reactant is at least one gas selected from the group consisting of O 2 , CO 2 , and N 2 O.

7. The method according to claim 1 , further comprising cleaning the reaction chamber after conducting the deposition by the thermal ALD and the PEALD.

8. The method according to claim 7 , wherein the cleaning is conducted using a cleaning gas by feeding the cleaning gas upstream of a position where a precursor and a reactant are mixed.

9. The method according to claim 8 , wherein the cleaning gas is excited by a remote plasma unit upstream of the reaction chamber or excited in-situ using a fluorine-containing gas.

10. The method according to claim 1 , wherein a cycle of the thermal ALD comprises feeding a reactant to the reaction chamber, which reactant is at least one gas selected from the group consisting of ethanol, H 2 O, and O 3 , continuously through the cycle.

11. The method according to claim 1 , wherein the catalytic gas is a gas of at least one compound selected from the group consisting of pyridine, alkyl metal, pyridylsilane, silylamine, and silazane.

12. The method according to claim 1 , wherein the first oxide film has a thickness of 1 to 7 nm, and the second oxide film has a thickness of 5 to 30 nm, wherein the second oxide film is thicker than the first oxide film.

13. The method according to claim 1 , wherein a surface of the substrate on which the first oxide film is deposited is constituted by amorphous carbon.

14. The method according to claim 1 , wherein a surface of the substrate on which the first oxide film is deposited is constituted by silicon.

15. The method according to claim 1 , wherein the substrate has patterned recesses, and the first and second oxide films are deposited on the recesses.