Semiconductor device and method

1. A method of manufacturing a semiconductor device, the method comprising:

placing a polymer raw material over a substrate, the polymer raw material comprising:

a polymer precursor;

a photosensitizer; and

an additive, the additive being a polyether;

exposing the polymer raw material to radiation to form a dielectric layer; and

curing the dielectric layer at a temperature, the additive acting as a catalyst during the curing.

2. The method according to claim 1 , wherein curing the dielectric layer is at a temperature between about 170° C. and less than 200° C.

3. The method according to claim 1 , wherein curing the dielectric layer is at a temperature less than about 170° C.

4. The method according to claim 1 , wherein the curing the dielectric layer occurs at a temperature of between about 170° C. and 230° C.

5. The method according to claim 1 , wherein the additive increases a free volume of the polymer raw material.

6. The method according to claim 1 , wherein the curing the dielectric layer forms above about 98% cyclization in the dielectric layer.

7. The method according to claim 1 , wherein the polymer precursor has a concentration of between about 25% and about 35%, wherein the photosensitizer has a concentration of between about 1% and about 8%, and wherein the additive has a concentration between about 1% and 10%.

8. The method according to claim 7 , wherein the additive has a concentration of about 5%.

9. The method according to claim 7 , wherein the additive has a concentration of about 3%.

10. A method of manufacturing a semiconductor device, the method comprising:

dispensing a mixture over a substrate, the mixture comprising:

a polymer precursor;

a photosensitizer; and

an additive, the additive being selected from the group consisting essentially of polyethylene glycol and polypropylene glycol;

exposing the mixture to radiation to form a passivation layer with openings;

curing the passivation layer at a temperature of between about 170° C. and about 230° C., the additive acting as a catalyst during the curing; and

forming a redistribution layer over the passivation layer and in the openings.

11. The method according to claim 10 , wherein the additive comprises polypropylene glycol (PPG).

12. The method according to claim 10 , wherein the additive comprises an ester.

13. The method according to claim 10 , wherein the additive comprises an alcohol.

14. The method according to claim 10 , wherein the additive comprises polyethylene glycol (PEG).

15. The method according to claim 14 , wherein the PEG has a molecular weight of about 600.

16. A method of manufacturing a semiconductor device, the method comprising:

attaching a die to a substrate;

forming vias over the substrate;

forming an encapsulant over the die and the vias, the encapsulant contacting sidewalls of the vias and sidewalls of the die;

forming a polymer layer over the die, the vias, and the encapsulant, comprising:

disposing a polymer raw material over the die, the vias, and the encapsulant, the polymer raw material comprising a polymer precursor, a photosensitizer, and an additive;

patterning the polymer raw material to form a polymer material, the patterning comprising exposing the polymer raw material to radiation; and

curing the polymer material at a temperature of less than 230° C., the curing forming above about 98% cyclization in the polymer layer; and

after forming the polymer layer, forming a redistribution layer over the polymer layer.

17. The method according to claim 16 , wherein the curing forms about 100% cyclization in the polymer layer.

18. The method according to claim 16 , wherein after curing, the polymer layer comprises the additive.

19. The method according to claim 16 , wherein the polymer precursor comprises a polyamic acid ester.

20. The method according to claim 19 , wherein the polymer layer has a Young's Modulus of more than about 3.4 GPa.