Semiconductor device
A semiconductor device includes a first semiconductor element having an upper electrode and a lower electrode, a first upper heat sink connected to the upper electrode, and a first lower heat sink connected to the lower electrode. The first lower heat sink is opposed to the first upper heat sink such that the first semiconductor element is sandwiched between the upper and lower heat sinks. One of the first upper heat sink and the first lower heat sink is a laminated substrate having an insulator substrate (such as a ceramic substrate) and conductor layers disposed on opposite surfaces of the insulator substrate, and the other of the first upper heat sink and the first lower heat sink is a conductor plate that is a conductor having higher thermal conductivity than the insulator substrate.
1. A semiconductor device, comprising:
a first semiconductor element having an upper electrode and a lower electrode;
a first upper heat sink connected to the upper electrode; and
a first lower heat sink connected to the lower electrode, the first lower heat sink being opposed to the first upper heat sink such that the first semiconductor element is sandwiched between the first upper heat sink and the first lower heat sink,
wherein one of the first upper heat sink and the first lower heat sink is a laminated substrate having an insulator substrate and conductor layers disposed on opposite surfaces of the insulator substrate, and the other of the first upper heat sink and the first lower heat sink is a conductor plate that is a conductor having higher thermal conductivity than the insulator substrate.
2. The semiconductor device according to claim 1 , further comprising an insulating sheet,
wherein the conductor plate has a first surface and a second surface that are in opposite sides of the conductor plate, and the insulating sheet is joined to the first surface which is located remoter from the first semiconductor element than the second surface.
3. The semiconductor device according to claim 1 , wherein the first upper heat sink is the laminated substrate, and the first lower heat sink is the conductor plate.
4. The semiconductor device according to claim 3 , wherein an area of the upper electrode of the first semiconductor element is smaller than an area of the lower electrode of the first semiconductor element.
5. The semiconductor device according to claim 3 , wherein at least one wiring layer is provided, in addition to the upper electrode, on an upper surface side of the first semiconductor element.
6. The semiconductor device according to claim 3 , further comprising:
a second semiconductor element having an upper electrode and a lower electrode;
a second upper heat sink connected to the upper electrode of the second semiconductor element; and
a second lower heat sink connected to the lower electrode of the second semiconductor element, the second lower heat sink being opposed to the second upper heat sink such that the second semiconductor element is sandwiched between the second upper heat sink and the second lower heat sink, wherein
the second upper heat sink is a laminated substrate having an insulator substrate and conductor layers disposed on opposite surfaces of the insulator substrate, and the second lower heat sink is a conductor plate that is a conductor having higher thermal conductivity than the insulator substrate of the second upper heat sink,
the second lower heat sink is electrically connected to the first upper heat sink via a joint part, and
the joint part is integrated with the second lower heat sink that is the conductor plate, and is joined to the first upper heat sink that is the laminated substrate, via a joint layer.
7. The semiconductor device according to claim 6 , wherein the laminated substrate of the first upper heat sink and the laminated substrate of the second upper heat sink constitute a single laminated substrate.
8. The semiconductor device according to claim 1 , wherein the first upper heat sink is the conductor plate, and the first lower heat sink is the laminated substrate.
9. The semiconductor device according to claim 8 , wherein an area of the lower electrode of the first semiconductor element is larger than an area of the upper electrode of the first semiconductor element.
10. The semiconductor device according to claim 9 , further comprising:
a second semiconductor element having an upper electrode and a lower electrode;
a second upper heat sink connected to the upper electrode of the second semiconductor element; and
a second lower heat sink connected to the lower electrode of the second semiconductor element, the second lower heat sink being opposed to the second upper heat sink such that the second semiconductor element is sandwiched between the second upper heat sink and the second lower heat sink, wherein
the second lower heat sink is a laminated substrate having an insulator substrate and conductor layers disposed on opposite surfaces of the insulator substrate, and the second upper heat sink is a conductor plate that is a conductor having higher thermal conductivity than the insulator substrate of the second lower heat sink,
the first upper heat sink is electrically connected to the second lower heat sink via a joint part, and
the joint part is integrated with the first upper heat sink that is the conductor plate, and is joined to the second lower heat sink that is the laminated substrate, via a joint layer.
11. The semiconductor device according to claim 10 , wherein the laminated substrate of the first lower heat sink and the laminated substrate of the second lower heat sink constitute a single laminated substrate.