Dielectric film for semiconductor fabrication
A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.
1. A method for semiconductor manufacturing, comprising:
receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed;
depositing a dielectric film having Si, N, C, and O directly attached to the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion, wherein the concentration of C in the first portion of the dielectric film is at least 10 times more than that in the second portion of the dielectric film; and
forming a conductive feature directly attached to the dielectric film.
2. The method of claim 1 , wherein the depositing of the dielectric film is by a low-temperature chemical vapor deposition (LT CVD) process that uses oxygen and an organic compound as precursors, the organic compound having silicon and nitrogen.
3. The method of claim 2 , wherein the organic compound includes BTBAS (bis(tertiarybutylamino)silane).
4. The method of claim 2 , wherein the organic compound includes BDEAS (bis(diethylamino)silane).
5. The method of claim 2 , wherein the organic compound includes one of TIPAS (tris(isopropylamino)silane).
6. The method of claim 2 , wherein the organic compound includes BDEAES (bis(diethylamino)ethylsilane) or TEAS (tris(ethylamino)silane).
7. The method of claim 2 , wherein the LT CVD process is performed at a temperature ranging from 300° C. to 400° C.
8. The method of claim 1 , wherein the first metal includes Al or Cu.
9. The method of claim 1 , wherein the depositing of the dielectric film is by an atomic layer deposition (ALD) process that uses oxygen and an organic compound having silicon and nitrogen as precursors.
10. The method of claim 1 , wherein the concentration of N in the first portion of the dielectric film is at least 10 times more than that in the second portion of the dielectric film.
11. The method of claim 1 , wherein the first surface is bottom and side walls of a trench, the dielectric film partially fills the trench, and the conductive feature is also deposited into the trench.
12. A method for semiconductor manufacturing, comprising:
receiving a device having a first surface through which a semiconductor material or a first metal of the device is exposed;
depositing a dielectric film directly attached to the first surface by a low temperature chemical vapor deposition (LT CVD) process uses oxygen and an organic compound as precursors, the organic compound having silicon, carbon and nitrogen, wherein the dielectric film has a higher concentration of nitrogen and carbon in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film positioned further away from the first surface than the first portion, wherein each of the concentrations of C and N in the first portion of the dielectric film is at least 10 times more than that in the second portion of the dielectric film; and
depositing a second metal directly attached to the dielectric film, wherein a portion of the dielectric film is interposed between the first surface and the second metal.
13. The method of claim 12 , wherein the LT CVD process uses oxygen and one of BTBAS (bis(tertiarybutylamino)silane), TIPAS (tris(isopropylamino)silane), and BDEAS (bis(diethylamino)silane) as precursors.
14. The method of claim 12 , wherein the LT CVD process uses oxygen and one of BDEAES (bis(diethylamino)ethylsilane) and TEAS (tris(ethylamino)silane) as precursors.
15. A method for semiconductor manufacturing, comprising:
receiving a device having a first surface that includes a first metal or an oxide of the first metal;
depositing a dielectric film directly attached to the first surface at a temperature below a melting point of the first metal and using oxygen and an organic compound as precursors, the organic compound having silicon, carbon and nitrogen, wherein the dielectric film has a higher concentration of nitrogen and carbon in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film positioned further away from the first surface than the first portion, wherein each of the concentrations of C and N in the first portion of the dielectric film is at least 10 times more than that in the second portion of the dielectric film; and
after the depositing of the dielectric film, depositing another film having a second metal directly attached to the dielectric film.
16. The method of claim 15 , wherein the depositing of the dielectric film is by chemical vapor deposition or atomic layer deposition.
17. The method of claim 15 , wherein the organic compound includes one of: BTBAS (bis(tertiarybutylamino)silane), BDEAS (bis(diethylamino)silane), TIPAS (tris(isopropylamino)silane), BDEAES (bis(diethylamino)ethylsilane), and TEAS (tris(ethylamino)silane).
18. The method of claim 15 , wherein the first metal includes Al, W, Co, or Cu.
19. The method of claim 1 , wherein the depositing of the dielectric film is by an atomic layer deposition process.
20. The method of claim 15 , wherein the depositing of the dielectric film is by a low-temperature chemical vapor deposition (LT CVD) process, and
wherein the LT CVD process is performed at a temperature ranging from 300° C. to 400° C.