Method of manufacturing light emitting device
A method of manufacturing a light emitting device includes: providing a wafer that comprises: a supporting substrate, and a plurality of light emitting structures arranged in a two-dimensional array on a first principal surface of the supporting substrate along a first direction and a second direction, each of the plurality of light emitting structures comprising a first semiconductor layer, which includes a first region and a second region, and a second semiconductor layer, which covers the second region of the first semiconductor layer, wherein the plurality of light emitting structures includes a first light emitting structure and a second light emitting structure; forming a recess in the first principal surface of the supporting substrate between the first light emitting structure and the second light emitting structure; forming a resin layer in the recess; and removing the supporting substrate so as to expose the first semiconductor layer.
1. A method of manufacturing a light emitting device, the method comprising:
providing a wafer that comprises:
a supporting substrate, and
a plurality of light emitting structures arranged in a two-dimensional array on a first principal surface of the supporting substrate along a first direction and a second direction, each of the plurality of light emitting structures comprising a first semiconductor layer of a first conductivity type, which includes a first region and a second region, and a second semiconductor layer of a second conductivity type, which covers the second region of the first semiconductor layer, wherein the plurality of light emitting structures includes a first light emitting structure and a second light emitting structure;
forming a recess in the first principal surface of the supporting substrate between the first light emitting structure and the second light emitting structure;
forming a resin layer in the recess; and
removing the supporting substrate so as to expose the first semiconductor layer.
2. The method according to claim 1 , further comprising:
between the step of forming the recess and the step of forming the resin layer, forming a reflecting film covering the plurality of light emitting structures and a surface defining the recess.
3. The method according to claim 1 , further comprising:
between the step of forming the resin layer and the step of removing the supporting substrate, forming a plurality of wirings on the resin layer that electrically connect the plurality of light emitting structures.
4. The method according to claim 1 , wherein:
the step of forming the recess comprises forming a first inclined surface and a second inclined surface that are inclined with respect to the first principal surface of the supporting substrate.
5. The method according to claim 2 , wherein:
the step of forming the recess comprises forming a first inclined surface and a second inclined surface that are inclined with respect to the first principal surface of the supporting substrate.
6. The method according to claim 4 , wherein the first semiconductor layer of the first light emitting structure has a side surface that is flush with the first inclined surface of the recess, and the first semiconductor layer of the second light emitting structure has a side surface that is flush with the second inclined surface of the recess.
7. The method according to claim 5 , wherein: the first semiconductor layer of the first light emitting structure has a side surface that is flush with the first inclined surface of the recess, and the first semiconductor layer of the second light emitting structure has a side surface that is flush with the second inclined surface of the recess.
8. The method according to claim 2 , wherein:
in the step of forming the reflecting film, the reflecting film defines a plurality of first through-holes and a plurality of second through-holes, each of the first through-holes being disposed above the first region of the first semiconductor layer of a respective one of the light emitting structures, each of the second through-holes being disposed above the second semiconductor layer of a respective one of the light emitting structures.
9. The method according to claim 8 , further comprising:
between the step of forming the resin layer and the step of removing the supporting substrate, forming a plurality of wirings on the resin layer that electrically connect the plurality of light emitting structures.
10. The method according to claim 9 , wherein:
in the step of forming the plurality of wirings, the plurality of wirings comprise:
a plurality of first wirings, each being electrically connected with the first semiconductor layers of a first subset of the plurality of light emitting structures via the first through-holes, and
a plurality of second wirings, each being electrically connected with the second semiconductor layers of a second subset of the plurality of light emitting structures via the second through-holes.
11. The method according to claim 10 , wherein:
the first subset of the plurality of light emitting structures are arranged in a column of the array, and
the second subset of the plurality of light emitting structures are arranged in a row of the array.
12. The method according to claim 5 , wherein:
in the step of forming the reflecting film, the reflecting film defines a plurality of first through-holes and a plurality of second through-holes, each of the first through-holes being disposed above the first region of the first semiconductor layer of a respective one of the light emitting structures, each of the second through-holes being disposed above the second semiconductor layer of a respective one of the light emitting structures.
13. The method according to claim 12 , further comprising:
between the step of forming the resin layer and the step of removing the supporting substrate, forming a plurality of wirings on the resin layer that electrically connect the plurality of light emitting structures.
14. The method according to claim 13 , wherein:
in the step of forming the plurality of wirings, the plurality of wirings comprise:
a plurality of first wirings, each being electrically connected with the first semiconductor layers of a first subset of the plurality of light emitting structures via the first through-holes, and
a plurality of second wirings, each being electrically connected with the second semiconductor layers of a second subset of the plurality of light emitting structures via the second through-holes.
15. The method according to claim 14 , wherein:
the first subset of the plurality of light emitting structures are arranged in a column of the array, and
the second subset of the plurality of light emitting structures are arranged in a row of the array.
16. The method according to claim 1 , wherein:
the supporting substrate is a Si substrate.
17. The method according to claim 2 , wherein:
the supporting substrate is a Si substrate.
18. The method according to claim 4 , wherein:
the supporting substrate is a Si substrate.
19. The method according to claim 5 , wherein:
the supporting substrate is a Si substrate.
20. The method according to claim 1 , wherein:
the reflecting film is a multilayer dielectric film.
21. The method according to claim 2 , wherein:
the reflecting film is a multilayer dielectric film.
22. The method according to claim 4 , wherein:
the reflecting film is a multilayer dielectric film.
23. The method according to claim 5 , wherein:
the reflecting film is a multilayer dielectric film.