Array substrate, display device having the same, and manufacturing method thereof

1. An array substrate comprising a sub-pixel having a first light emitting area and a second light emitting area structurally different from the first light emitting area, wherein the sub-pixel comprising:

a first electrode on a base substrate;

a first light emitting layer in the first light emitting area and a second light emitting layer in the second light emitting area, the first light emitting layer and the second light emitting layer made of a same material and on a side of the first electrode distal to the base substrate; and

a first tuning layer between the first light emitting layer and the first electrode in the first light emitting area;

wherein the first light emitting area comprises N first light emitting sub-areas and the second light emitting area comprises a central second light emitting sub-area and M second light emitting sub-areas;

the central second light emitting sub-area is alternately surrounded by the N first light emitting sub-areas and the M second light emitting sub-areas, N is an integer>1, M equals to N or N−1, and M>0;

each of the N first light emitting sub-areas has a ring shape, each of the M second light emitting sub-areas has a ring shape, the N first light emitting sub-areas and the M second light emitting sub-areas together form a layered ring structure in the sub-pixel; and

the N first light emitting sub-areas and the M second light emitting sub-areas are in an alternate pattern, each of the N first light emitting sub-areas is adjacent to at least one of the M second light emitting sub-areas, each of the M second light emitting sub-areas is adjacent to at least one of the N first light emitting sub-areas;

wherein the sub-pixel further comprises:

a first hole injection layer on a side of the first light emitting layer proximal to the base substrate in the N first light emitting sub-areas; and

a second hole injection layer on a side of the second light emitting layer proximal to the base substrate in the central second light emitting sub-area and the M second light emitting sub-areas;

wherein the first hole injection layer is in contact with the first tuning layer;

the second hole injection layer and the first electrode are in direct contact with each other, and are connected without any intermediary element at an interface between the second hole injection layer and the first electrode;

the first hole injection layer and the second hole injection layer are integrally formed as a single body, and are made of a same hole injection material;

the first hole injection layer and the first tuning layer are in direct contact with each other, and are connected without any intermediary element at an interface between the first hole injection layer and the first tuning layer;

the first tuning layer is made of a material different from a material of the first hole injection layer and the second hole injection layer; and

the first tuning layer is made of a material selected from a group consisting of indium tin oxide, silicon oxide (SiOx), silicon nitride (SiNx), and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS).

2. The array substrate of claim 1 , wherein a tuning layer is absent between the second light emitting layer and the first electrode in the second light emitting area.

3. The array substrate of claim 2 , wherein the central second light emitting area has a higher emitted light intensity than the first light emitting area.

4. The array substrate of claim 1 , wherein the first light emitting layer comprises a plurality of first light emitting sub-layers connected in series, and the second light emitting layer comprises a plurality of second light emitting sub-layers connected in series.

5. The array substrate of claim 1 , wherein the first tuning layer has a thickness between 25 nm to 40 nm.

6. The array substrate of claim 1 , wherein a ratio between an aperture ratio in the first light emitting area and an aperture ratio in the second light emitting area correlates with a difference in turn-on voltages between the first light emitting area and the second light emitting area.

7. A display device comprising an array substrate of claim 1 .

8. A method of manufacturing an array substrate comprising a sub-pixel having a first light emitting area and a second light emitting area structurally different from the first light emitting area, comprising:

forming a first electrode on a base substrate;

forming a first light emitting layer in the first light emitting area and a second light emitting layer in the second light emitting area on a side of the first electrode distal to the base substrate; the second light emitting layer made of a same material as the first light emitting layer; and

forming a first tuning layer between the first light emitting layer and the first electrode in the first light emitting area;

wherein the first light emitting area is formed to comprise N first light emitting sub-areas and the second light emitting area is formed to comprise a central second light emitting sub-area and M second light emitting sub-areas;

the central second light emitting sub-area alternately surrounded by the N first light emitting sub-areas and the M second light emitting sub-areas, N is an integer>1, M equals to N or N−1, and M>0;

each of the N first light emitting sub-areas has a ring shape, each of the M second light emitting sub-areas has a ring shape, the N first light emitting sub-areas and the M second light emitting sub-areas together form a layered ring structure in the sub-pixel; and

the N first light emitting sub-areas and the M second light emitting sub-areas are formed in an alternate pattern, each of the N first light emitting sub-areas is adjacent to at least one of the M second light emitting sub-areas, each of the M second light emitting sub-areas is adjacent to at least one of the N first light emitting sub-areas;

wherein the method further comprises:

forming a first hole injection layer on a side of the first light emitting layer proximal to the base substrate in the N first light emitting sub-areas; and

forming a second hole injection layer on a side of the second light emitting layer proximal to the base substrate in the central second light emitting sub-area and the M second light emitting sub-areas;

wherein the first hole injection layer is formed to be in contact with the first tuning layer;

the second hole injection layer and the first electrode are formed to be in direct contact with each other, and are connected without any intermediary element at an interface between the second hole injection layer and the first electrode;

the first hole injection layer and the second hole injection layer are integrally formed as a single body, and are made of a same hole injection material;

the first hole injection layer and the first tuning layer are formed to be in direct contact with each other, and are connected without any intermediary element at an interface between the first hole injection layer and the first tuning layer;

the first tuning layer is made of a material different from a material of the first hole injection layer and the second hole injection layer; and

the first tuning layer is made of a material selected from a group consisting of indium tin oxide, silicon oxide (SiOx), silicon nitride (SiNx), and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS).

9. The method of claim 8 , wherein the first light emitting layer and the second light emitting layer are formed in a single process using a same material.