Optoelectronic semiconductor component
A method of producing an optoelectronic semiconductor component includes providing a carrier, arranging at least one optoelectronic semiconductor chip at a top side of the carrier, applying a phosphor layer at the at least one semiconductor chip, forming a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body surrounds all side areas of the at least one optoelectronic semiconductor chip, and removing the carrier, wherein the phosphor layer is applied before forming the shaped body.
1. A method of producing an optoelectronic semiconductor component comprising:
providing a carrier,
arranging at least one optoelectronic semiconductor chip at a top side of the carrier,
applying a phosphor layer at the at least one semiconductor chip,
forming an electrically insulating shaped body around the at least one optoelectronic semiconductor chip, wherein the electrically insulating shaped body surrounds all side areas of the at least one optoelectronic semiconductor chip,
removing the carrier, wherein
the phosphor layer is applied before forming the electrically insulating shaped body.
2. The method according to claim 1 , wherein the electronically insulating shaped body comprises a matrix material and light-reflecting particles are introduced into the matrix material such that electrically insulating the shaped body appears white.
3. The method according to claim 2 , wherein the matrix material contains silicone or consists of silicone and the light-reflecting particles consist of titanium oxide.
4. The method according to claim 1 , wherein the at least one optoelectronic semiconductor chip remains partly free from the electrically insulating shaped body.
5. The method according to claim 4 , wherein the side areas remain free from the electrically insulating shaped body.
6. The method according to claim 1 , wherein the at least one optoelectronic semiconductor chip comprises epitaxially produced layers and the epitaxially produced layers remain free from the electrically insulating shaped body.
7. The method according to claim 1 , wherein after removing the carrier, an underside of the at least one optoelectronic semiconductor chip, the underside originally facing the carrier, is freely accessible.
8. The method according to claim 1 , wherein after removing the carrier, an underside of the electrically insulating shaped body, the underside of the electrically insulating shaped body originally facing the carrier, is freely accessible.