Methods and systems for performing decoding in finFET based memories

1. A fin-Field Effect Transistor (fin-FET) based system on chip (SoC) memory comprising:

a control block comprising:

a clock generator circuit configured to generate an internal clock signal using an external clock signal received via an input node;

a global driver circuit coupled to the clock generator circuit and configured to drive a global clock signal corresponding to the internal clock signal; and

a plurality of first logic gates configured to receive a plurality of lower order non-clocked address signals via at least one input terminal associated with the plurality of first logic gates, wherein the plurality of lower order non-clocked address signals are non-clocked address signals; and

a plurality of row decoder blocks configured to receive an input from the control block,

each of the plurality of row decoder blocks comprising:

a second logic gate configured to receive a plurality of higher order non-clocked address signals via a plurality of input terminals associated with the second logic gate;

a transmission gate configured to combine at least two of the global clock signal and the plurality of higher order non-clocked address signals, wherein the global clock signal is received via the global driver circuit and the plurality of higher order non-clocked address signals is received via the second logic gate;

a plurality of third logic gates configured to receive at least two of the plurality of lower order non-clocked address signals and a plurality of higher order clocked address signals, to output a combined lower order address and higher order address along with the global clock signal, wherein the plurality of lower order non-clocked address signals is received via the plurality of first logic gates and the plurality of higher order clocked address signal is received via the transmission gate;

a plurality of level shifter circuits configured to receive the output of the plurality of third logic gates, and configured to output at least one of a translated logic level and a translated voltage level; and

a plurality of word-line driver circuits configured to generate a plurality of word-lines based on the output of plurality of level shifter circuits.

2. The fin-FET based SoC memory as claimed in claim 1 , wherein the transmission gate is configured to receive the plurality of higher order non-clocked address signals via at least two of an input terminal associated with the transmission gate.

3. The fin-FET based SoC memory as claimed in claim 1 , wherein the transmission gate is configured to receive the global clock signal via a drain terminal associated with the transmission gate.

4. The fin-FET based SoC memory as claimed in claim 1 , further comprising a plurality of inverters, wherein the plurality of lower order non-clocked address signals are transmitted to the plurality of third logic gates via at least one of the plurality of inverters.

5. The fin-FET based SoC memory as claimed in claim 1 , wherein the higher order non-clocked address signal is configured to control the transmission gate.

6. The fin-FET based SoC memory as claimed in claim 1 , wherein each of the plurality of row decoder blocks further comprise:

a plurality of transmission gates configured to receive at least two of the global clock signal and a plurality of address signals, wherein the plurality of address signals comprise a plurality of lower order non-clocked address signals and a higher order non-clocked address signal; and

the plurality of word-line driver circuits configured to generate the plurality of word-lines based on the plurality of address signals received via the plurality of transmission gates and the plurality of level shifter circuits.

7. The fin-FET based SoC memory as claimed in claim 6 , wherein the plurality of lower order non-clocked address signals are received by the plurality of third logic gates via the plurality of first logic gates.

8. The fin-FET based SoC memory as claimed in claim 6 , wherein the higher order non-clocked address signal is received by the plurality of third logic gates via the second logic gate.

9. The fin-FET based SoC memory as claimed in claim 1 , wherein each of the plurality of row decoder blocks further comprise:

the plurality of transmission gates configured to receive at least two of a plurality of lower order clocked address signals and the higher order non-clocked address signal; and

the plurality of word-line driver circuits configured to generate the plurality of word-lines based on the address signals received via the plurality of transmission gates and the plurality of level shifter circuits.

10. The fin-FET based SoC memory as claimed in claim 9 , wherein the plurality of lower order clocked address signals are received via the plurality of first logic gates.

11. The fin-FET based SoC memory as claimed in claim 9 , wherein the plurality of higher order non-clocked address signal are received via the second logic gate.

12. The fin-FET based SoC memory as claimed in claim 9 , wherein the plurality of first logic gates are configured to receive the global clock signal via the global driver circuit.

13. The fin-FET based SoC memory as claimed in claim 1 , wherein each of the plurality of row decoder blocks further comprise:

the plurality of transmission gates configured to receive at least two of the global clock signal and the plurality of address signals, wherein the plurality of address signals comprise a plurality of lower order non-clocked address signals, and a higher order non-clocked address signal; and

the plurality of word-line driver circuits configured to generated plurality of word-lines based on the address signals received via the plurality of transmission gates and the plurality of inverters.

14. The fin-FET based SoC memory as claimed in claim 13 , wherein the plurality of address signals are received via the plurality of third logic gates.

15. The fin-FET based SoC memory as claimed in claim 13 , wherein the plurality of transmission gates are configured to receive the global clock signal via a level shifter circuit and the global driver circuit.

16. The fin-FET based SoC memory as claimed in claim 13 , wherein the plurality of third logic gates are configured to receive the plurality of lower order non-clocked address signals via the plurality of level shifter circuits.

17. A method for performing decoding in a fin-Field Effect Transistor (fin-FET) based system on chip (SoC) memory, the method comprising:

generating, by a clock generator circuit, an internal clock signal;

driving, by a global driver circuit, a global clock signal corresponding to the internal clock signal;

receiving, by a plurality of first logic gates, a plurality of lower order non-clocked address signals via at least one of an input terminal associated with the plurality of first logic gates;

receiving, by a second logic gate, a plurality of higher order non-clocked address signals via a plurality of input terminals associated with the second logic gate;

controlling, by the second logic gate, a pass logic corresponding to a higher order non-clocked address signal outputted by the second logic gates;

combining, by a transmission gate, the at least two of the global clock signal and the higher order non-clocked address signal;

receiving, by a plurality of third logic gates, at least two of the plurality of lower order non-clocked signals and the plurality of higher order clocked address signal;

combining, by the plurality of third logic gates, the received at least two of plurality of lower order non-clocked signals and a higher order clocked signal;

level shifting, by a plurality of level shifter circuits, the combined address signal via the plurality of third logic gates; and

generating, by a plurality of word-line driver circuits, plurality of word-lines based on the level shifted address signal received via the plurality of level shifter circuits.

18. The method as claimed in claim 17 , further comprising:

receiving, by a plurality of transmission gates, at least two of the global clock signal and a plurality of address signals, wherein the plurality of address signals comprise plurality of lower order non-clocked address signals and a higher order non-clocked address signal; and

generating, by the plurality of word-line driver circuits, plurality of word-lines based on the address signals, received via the plurality of transmission gates and the plurality of level shifter circuits.

19. The method claimed in claim 17 , further comprising:

receiving, by the plurality of transmission gates, at least two of a plurality of lower order clocked address signals and the higher order non-clocked address signal; and

generating, by the plurality of word-line driver circuits, the plurality of word-lines based on the address signals received via the plurality of transmission gates and plurality of level shifter circuits.

20. The method claimed in claim 17 , further comprising:

receiving, by the plurality of transmission gates, at least two of the global clock signal and the plurality of address signals, wherein the plurality of address signals comprise lower order non-clocked address signals and higher order non-clocked address signal; and

generating, by the plurality of word-line driver circuits, plurality of word-lines based on the address signals received via the plurality of transmission gates and the inverters.