Semiconductor device
A semiconductor device includes: a semiconductor substrate having a cell region, a termination region located around the cell region, and a wiring region; an IGBT provided in the cell region; an insulating film provided on the semiconductor substrate in the wiring region; a gate electrode provided on the insulating film and connected to a gate of the IGBT; a p-type well layer provided on a surface side of the semiconductor substrate in the termination region; and a diode provided in the wiring region, wherein the diode includes a the p-type base layer provided on the surface side of the semiconductor substrate and an n-type cathode layer provided on a reverse side of the semiconductor substrate, the p-type base layer is provided in common to the wiring region and the cell region and has a lower impurity concentration and a smaller depth than the p-type well layer.
1. A semiconductor device comprising:
a semiconductor substrate having a cell region, a termination region located around the cell region, and a wiring region;
an IGBT provided in the cell region;
an insulating film provided on the semiconductor substrate in the wiring region;
a gate electrode provided on the insulating film and connected to a gate of the IGBT;
a p-type base layer provided on a surface side of the semiconductor substrate in the cell region and the wiring region;
a p-type well layer provided on a surface side of the semiconductor substrate in the termination region; and
a diode provided in the wiring region, wherein
the diode includes the p-type base layer and an n-type cathode layer provided on a reverse side of the semiconductor substrate,
an impurity concentration of the p-type base layer in the cell region is equal to an impurity concentration of the p-type base layer in the wiring region,
a depth of the p-type base layer in the cell region is equal to a depth of the p-type base layer in the wiring region, and
the p-type base layer has a lower impurity concentration and a smaller depth than the p-type well layer.
2. The semiconductor device according to claim 1 , further comprising:
a p-type emitter layer provided on a surface side of the p-type base layer in the wiring region and having a higher impurity concentration than the p-type base layer; and
a surface electrode connected to the p-type base layer and the p-type emitter layer,
wherein the p-type emitter layer is away from the p-type well layer.
3. The semiconductor device according to claim 2 , wherein the p-type emitter layer is provided in a part connected to the surface electrode.
4. The semiconductor device according to claim 1 , wherein the semiconductor substrate is made of a wide-band-gap semiconductor.
5. The semiconductor device according to claim 2 , wherein the semiconductor substrate is made of a wide-band-gap semiconductor.
6. The semiconductor device according to claim 3 , wherein the semiconductor substrate is made of a wide-band-gap semiconductor.
7. A semiconductor device comprising:
a semiconductor substrate having a cell region, a termination region located around the cell region, and a wiring region;
an IGBT provided in the cell region;
an insulating film provided on the semiconductor substrate in the wiring region;
a gate electrode provided on the insulating film and connected to a gate of the IGBT;
a p-type well layer provided on a surface side of the semiconductor substrate in the termination region; and
a diode provided in the wiring region;
an n-type drift layer provided in the semiconductor substrate between the p-type base layer and the n-type cathode layer, wherein
the p-type well layer is in the wiring region,
a distance as seen in a plan view from the p-type well layer to the n-type cathode layer is equal to or greater than a thickness of the n-type drift layer,
the diode includes a the p-type base layer provided on the surface side of the semiconductor substrate and an n-type cathode layer provided on a reverse side of the semiconductor substrate, and
the p-type base layer is provided in common to the wiring region and the cell region and has a lower impurity concentration and a smaller depth than the p-type well layer.
8. The semiconductor device according to claim 7 , further comprising:
a p-type emitter layer provided on a surface side of the p-type base layer in the wiring region and having a higher impurity concentration than the p-type base layer; and
a surface electrode connected to the p-type base layer and the p-type emitter layer,
wherein the p-type emitter layer is away from the p-type well layer.
9. The semiconductor device according to claim 8 , wherein the p-type emitter layer is provided in a part connected to the surface electrode.
10. The semiconductor device according to claim 7 , wherein the semiconductor substrate is made of a wide-band-gap semiconductor.
11. The semiconductor device according to claim 8 , wherein the semiconductor substrate is made of a wide-band-gap semiconductor.
12. The semiconductor device according to claim 9 , wherein the semiconductor substrate is made of a wide-band-gap semiconductor.