Field-effect transistor having a bypass electrode connected to the gate electrode connection section
A field-effect transistor includes a source electrode, a drain electrode, a semiconductor structure including a channel provided between the source electrode and the drain electrode in a first direction. Gate main portions have a first gate main portion length in the first direction and a second gate main portion length in a second direction. Connection portions are alternatively connected to the gate main portions respectively in the second direction. Each of the connection portions has a first connection portion length in the first direction and a second connection portion length in the second direction. The first connection portion length is longer than the first gate main portion length. The second connection portion length is shorter than the second gate main portion length. An external connection section is to apply electric power to the gate electrode. A bypass electrode connects the external connection section to each of the connection portions.
1. A field-effect transistor comprising:
a source electrode including source main portions arranged in a line extending in a lengthwise direction;
a drain electrode including a drain main portion provided substantially in parallel to the source main portions and extending in the lengthwise direction;
a semiconductor structure provided on the source main portions and the drain main portion to constitute a channel between each of the source main portions and the drain main portion in a gate length direction intersecting with the lengthwise direction;
a gate electrode longitudinally extending in the lengthwise direction, the gate electrode having a first end and a second end opposite to the first end in the lengthwise direction, the gate electrode comprising:
gate main portions provided on the semiconductor structure substantially in parallel to the source main portions respectively such that each of the gate main portions is provided between each of the source main portions and the drain main portion in the gate length direction, each of the gate main portions having a first gate main portion length in the gate length direction and a second gate main portion length in the lengthwise direction; and
connection portions alternately arranged between and connected in series to adjacent gate main portions of the gate main portions in the lengthwise direction,
each of the connection portions having a first connection portion length in the gate length direction and a second connection portion length in the lengthwise direction, the first connection portion length being longer than the first gate main portion length, the second connection portion length being shorter than the second gate main portion length;
an external connection section connected to the first end of the gate electrode to apply electric power to the gate electrode; and
a bypass electrode connecting the external connection section to each of the connection portions and being electrically connected to the gate main portions,
wherein the drain electrode includes an additional drain main portion extending in the lengthwise direction and arranged substantially in parallel to the drain main portion,
wherein the source electrode includes additional source main portions arranged in parallel with the source main portions, respectively, and
wherein the gate electrode further comprises additional gate main portions and additional connection portions alternately arranged between and connected in series to adjacent additional gate main portions of the additional gate main portions in the lengthwise direction, the additional gate main portions being provided on the semiconductor structure substantially in parallel to the additional source main portions respectively such that each of the additional gate main portions is provided between each of the additional source main portions and the additional drain main portion in the gate length direction.
2. The field-effect transistor according to claim 1 , wherein the first gate main portion length is a gate length of the channel.
3. The field-effect transistor according to claim 1 , wherein the bypass electrode is directly connected to each of the connection portions.
4. The field-effect transistor according to claim 1 , wherein the bypass electrode is connected to each of the connection portions via another layer.
5. The field-effect transistor according to claim 1 , wherein the gate length direction is substantially perpendicular to the lengthwise direction.
6. The field-effect transistor according to claim 1 , wherein the bypass electrode has a first bypass electrode length in the gate length direction which is longer than the first gate main portion length.
7. The field-effect transistor according to claim 1 , wherein the bypass electrode has a thickness larger than thicknesses of the gate main portions in a thickness direction perpendicular to the lengthwise direction and the gate length direction.
8. The field-effect transistor according to claim 1 , wherein the bypass electrode is made of a material having higher electric conductivity than a material of which the gate main portions are made.
9. The field-effect transistor according to claim 1 ,
wherein the gate electrode and the drain electrode are disposed on an upper side of the semiconductor structure, and
wherein the bypass electrode has a portion between the gate electrode and the drain electrode in the gate length direction such that an insulating film is sandwiched between the portion and the upper side of the semiconductor structure.
10. The field-effect transistor according to claim 1 , wherein the second gate main portion length is equal to or less than 0.5 mm.
11. The field-effect transistor according to claim 1 , wherein the line is a straight line.