Gain stabilization for supply modulated RF and microwave integrated circuits
View Patent ↗Biasing circuitry for RF and microwave integrated circuits keeps the quiescent current of a power amplifier integrated circuit constant when operated with a time-varying DC supply voltage. A dynamic gate bias circuit includes an on-chip sense transistor and control circuitry to keep current of the sense transistor substantially constant by varying sense transistor bias voltage to compensate for variation in the time-varying supply voltage signal. The varying bias voltage is then applied to the amplifying transistors of the power amplifier, resulting in their quiescent current being substantially independent of the time-varying supply voltage.
1. Apparatus for stabilizing gain in a supply modulated RF circuit having an RF amplifying transistor comprising:
a DC input for a fixed DC voltage supply to power the apparatus;
an RF input for a time-varying RF input-voltage signal to be amplified, the RF input connected to the amplifying transistor;
a supply input for a time-varying supply voltage signal based upon the RF input voltage signal;
an output for providing amplified output voltage;
a sense transistor that is analogous to the amplifying transistor, the sense transistor connected to the supply input and disposed on-chip with the amplifying transistor;
control circuitry connected to the supply input and the sense transistor and configured to keep current of the sense transistor substantially constant by varying sense transistor bias voltage to compensate for variation in the time-varying supply voltage signal; and
circuitry configured to supply the varying sense transistor bias voltage as bias voltage to the amplifying transistor, wherein the quiescent current of the amplifying transistor is kept substantially independent of the time-varying supply voltage.
2. The apparatus of claim 1 wherein the supply modulated RF circuit is two-stage and has a second amplifying transistor, and further comprising circuitry configured to supply the varying sense transistor bias voltage as bias voltage to the second amplifying transistor.
3. The apparatus of claim 1 wherein the control circuitry comprises a current source, and amplifier, and two resistors.
4. The apparatus of claim 3 wherein the current source is controlled externally.
5. The apparatus of claim 1 wherein the control circuitry is disposed on-chip with the amplifying transistor and the sense transistor.
6. The apparatus of claim 1 wherein the amplifying transistor and the sense transistor comprise GaN transistors.
7. The apparatus of claim 1 wherein the amplifying transistor and the sense transistor comprise GaAs transistors.
8. The apparatus of claim 1 wherein the time-varying supply voltage signal has a bandwidth greater than 1 MHz.
9. The apparatus of claim 1 wherein the time-varying supply voltage signal varies between discrete voltage levels.
10. The apparatus of claim 1 wherein the time-varying supply voltage signal is derived from an envelope signal of the time-varying RF input voltage signal.
11. The method of stabilizing gain in a supply modulated RF circuit having an amplifying transistor comprising the steps of:
(a) disposing a sense transistor analogous to the amplifying transistor on-chip with the amplifying transistor;
(b) powering the apparatus with a fixed DC power supply;
(c) providing a time-varying RF input voltage signal to be amplified to the amplifying transistor;
(c) providing a time-varying supply voltage signal based upon the time-varying RF input voltage signal to the amplifying transistor and to the sense transistor;
(d) maintaining current in the sense transistor substantially constant by varying bias voltage on the sense transistor to compensate for variation in the time-varying supply voltage signal; and
(e) supplying the varying sense transistor bias voltage as bias voltage to the amplifying transistor to keep the quiescent current of the amplifying transistor substantially constant.
12. The method of claim 11 wherein the supply modulated RF circuit is two-stage and has a second amplifying transistor, and further including the step of supplying the varying sense transistor bias voltage as bias voltage to the second amplifying transistor.
13. The method of claim 11 wherein the amplifying transistor and the sense transistor comprise GaN transistors.
14. The method of claim 11 wherein the amplifying transistor and the sense transistor comprise GaAs transistors.
15. The method of claim 11 wherein the supply voltage signal has a bandwidth greater than 1 MHz.
16. The method of claim 11 wherein the time-varying supply voltage signal varies between discrete voltage levels.
17. The method of claim 11 wherein the time-varying supply voltage signal is derived from an envelope signal of the time-varying RF input voltage signal.