Semiconductor structure with through silicon via and method for fabricating and testing the same
A semiconductor structure with a through silicon via includes a substrate having a front side and a back side. The through silicon via penetrates the substrate. A device is disposed on the front side of the substrate. Numerous dielectric layers cover the front side. A first test pad for testing the device is disposed on the front side of the substrate. A second test pad for testing the through silicon via is disposed on the back side of the substrate. A method of fabricating and testing the semiconductor structure is also provided.
1. A fabricating method of a semiconductor structure with a through silicon via, comprising:
providing a substrate comprising a front side and a back side;
forming a device disposed on the front side of the substrate;
forming a through silicon via embedded in the substrate, wherein an end of the through silicon via is entirely covered by the back side of the substrate;
forming a plurality of dielectric layers on the front side of the substrate;
forming a first test pad on a surface of the dielectric layers and the first test pad electrically connecting to the device;
testing the first test pad;
after testing the first test pad,
thinning the back side of the substrate to expose the end of the through silicon via;
forming a second test pad disposed on the back side of the substrate and the second test pad electrically connecting to the through silicon via; and
after thinning the back side of the substrate, testing the second test pad to determine if the through silicon via works and and/or to determine if the through silicon via can pass a reliability test.
2. The fabricating method of a semiconductor structure with a through silicon via of claim 1 , further comprising an inner circuit disposed in the dielectric layers wherein the inner circuit electrically connects to the device and the through silicon via.