Light emitting structure to aid LED light extraction
Display panels and methods of manufacture are described for down converting a peak emission wavelength of a pump LED within a subpixel with a quantum dot layer. In some embodiments, pump LEDs with a peak emission wavelength below 500 nm, such as between 340 nm and 420 nm are used. QD layers in accordance with embodiments can be integrated into a variety of display panel structures including a wavelength conversion cover arrangement, QD patch arrangement, or QD layers patterned on the display substrate.
1. A light emitting structure comprising:
a reflective bank structure;
a light emitting diode (LED) mounted within the reflective bank structure;
a passivation layer laterally surrounding the LED within the reflective bank structure;
a top electrode layer spanning over the LED, the passivation layer, and the reflective bank structure;
a film over the top electrode layer;
a cavity within the film, the cavity directly over the LED;
a fill material within the cavity.
2. The light emitting structure of claim 1 , wherein the cavity is formed completely through a thickness of the film.
3. The light emitting structure of claim 2 , further comprising a mirror layer covering sidewalls of the cavity.
4. The light emitting structure of claim 2 , wherein the fill material is a higher index material than the film.
5. The light emitting structure of claim 2 , wherein the reflective bank structure includes a reflective mirror that spans around and underneath the LED.
6. The light emitting structure of claim 2 , wherein the LED comprises an inorganic semiconductor-based p-n diode, and a metallic bottom contact.
7. The light emitting structure of claim 6 , wherein the LED has a maximum width of less than 10 microns.
8. The light emitting structure of claim 2 , further comprising a color filter layer spanning over the film and cavity.
9. The light emitting structure of claim 2 , wherein a top surface of the fill material and a top surface of the film are coplanar.
10. The light emitting structure of claim 2 , further comprising a black matrix layer one a top or bottom surface of the film.
11. The light emitting structure of claim 2 , further comprising:
a second reflective bank structure;
a second LED mounted within the second reflective bank structure;
a second passivation layer laterally surrounding the second LED within the second reflective bank structure;
wherein the top electrode layer spans over the second LED, the second passivation layer, and the second reflective bank structure;
a second cavity within the film, the second cavity directly over the second LED;
a second fill material within the second cavity.
12. The light emitting structure of claim 11 , wherein the second cavity is formed completely through the thickness of the film.
13. The light emitting structure of claim 12 , further comprising a second mirror layer covering sidewalls of the second cavity.
14. The light emitting structure of claim 12 , wherein the second fill material is a higher index material than the film.
15. The light emitting structure of claim 12 , wherein the second reflective bank structure includes a second reflective mirror that spans around and underneath the second LED.
16. The light emitting structure of claim 12 , wherein the second LED comprises a second inorganic semiconductor-based p-n diode, and a second metallic bottom contact.
17. The light emitting structure of claim 16 , wherein the second LED has a maximum width of less than 10 microns.
18. The light emitting structure of claim 12 , further comprising a color filter layer that spans over second cavity.
19. The light emitting structure of claim 12 , wherein a top surface of the second fill material and the top surface of the film are coplanar.
20. The light emitting structure of claim 12 , wherein the LED and the second LED are designed for different color emissions.