Topside structures for an insulated gate bipolar transistor (IGBT) device to achieve improved device performances
This invention discloses an insulated gate bipolar transistor (IGBT) device formed in a semiconductor substrate. The IGBT device has a split-shielded trench gate that includes an upper gate segment and a lower shield segment. The IGBT device may further include a dummy trench filled with a dielectric layer disposed at a distance away from the split-shielded trench gate. The IGBT device further includes a body region extended between the split-shielded trench gate and the dummy trench encompassing a source region surrounding the split-shielded trench gate near a top surface of the semiconductor substrate. The IGBT device further includes a heavily doped N region disposed below the body region and above a source-dopant drift region above a bottom body-dopant collector region at a bottom surface of the semiconductor substrate. In an alternative embodiment, the IGBT may include a planar gate with a trench shield electrode.
1. An insulated gate bipolar transistor (IGBT) device in a semiconductor substrate having a bottom layer of a first conductivity type supporting an upper epitaxial layer of a second conductivity type wherein the IGBT device further comprising:
a shield trench electrode extended vertically in the upper epitaxial layer filled with an electrode that is completely surrounded and shielded by a dielectric layer, wherein the shield trench electrode extending along a first lateral direction in the semiconductor substrate;
a planar gate extending along a second lateral direction different from the first lateral direction over a planar gate insulation layer disposed directly on top of said upper epitaxial layer;
a source region formed as a heavily doped region of the second conductivity type, encompassed in a body region of the first conductivity type disposed near a top surface of the upper epitaxial layer below the planar gate, wherein the body region encompassing the source region extends from a region in the upper epitaxial layer opposite to and away from the shield trench electrode laterally along a same direction as the planar gate toward the shield trench electrode; and
a body contact region formed as a heavily doped region of the first conductivity type disposed in the body region, adjacent the source region and away from the planar gate near the top surface of the upper epitaxial layer, and extending laterally along a same direction as the body region, wherein the source region and the body contact region encompassed in the body region, and the source region extends laterally toward the shield trench electrode and terminates at a distance away in the upper epitaxial layer from the dielectric layer surrounding the shield trench electrode.
2. The IGBT device of claim 1 wherein:
the upper epitaxial layer of the second conductivity type further comprises a first epitaxial layer and a second epitaxial layer on top of the first epitaxial layer wherein the second epitaxial layer is more heavily doped with dopant ions of the second conductivity type than the first epitaxial layer.
3. The IGBT device of claim 1 wherein:
the shielded trench gate further includes a gate electrode.
4. The IGBT device of claim 1 further comprising:
a second trench filled with a gate electrode padded with a gate dielectric layer wherein the gate electrode is electrically insulated to function as a dummy trench gate.
5. The IGBT device of claim 1 wherein:
the bottom layer of the semiconductor substrate of the first conductivity type is a P-type semiconductor substrate.
6. The IGBT device of claim 1 wherein:
the planar gate extending over the shield trench electrode and extending partially over the body region and the source region encompassed in the body region.
7. The IGBT of device claim 1 wherein:
the source region of the second conductivity type is an N-type dopant region encompassed in the body region of a P-type conductivity.
8. The IGBT device of claim 1 wherein:
the shield trench electrode further includes an electrode having the first conductivity type opposite from the second conductivity type of the source region.
9. The IGBT device of claim 1 wherein:
the shield trench electrode extending laterally along a perpendicular direction relative to the planar gate.
10. The IGBT device of claim 4 wherein:
the dummy trench gate is disposed next to the body region functioning as a base for the IGBT device wherein the base is disposed opposite the shield trench electrode.
11. The IGBT device of claim 1 further comprising:
an electrode disposed on a bottom surface of the semiconductor substrate as a collector of the IGBT device and an electrode contacting the source and body regions disposed on the top surface of the semiconductor substrate functioning-, as an emitter for the IGBT device.
12. The IGBT device of claim 2 wherein:
the shield trench electrode extends vertically to a top portion of the lower epitaxial layer of the second conductivity type.
13. A power semiconductor device in a semiconductor substrate having a bottom layer supporting an upper epitaxial layer wherein the power semiconductor device further comprising:
a shield trench electrode extended vertically in the upper epitaxial layer filled with an electrode that is completely surrounded and shielded by a dielectric layer wherein the shield trench electrode extending along a first lateral direction in the semiconductor substrate;
a planar gate extending along a second lateral direction different from the first lateral direction over a planar gate insulation layer disposed directly on top of said upper epitaxial layer;
a source region formed as a heavily doped region of a second conductivity type, encompassed in a body region of a first conductivity type disposed near a top surface of the upper epitaxial layer below said planar gate, wherein the body region encompassing the source region extends from a region in the upper epitaxial layer opposite to and away from the shield trench electrode laterally along a same direction as the planar gate toward the shield trench electrode; and
a body contact region formed as a heavily doped region of the first conductivity type disposed in the body region, adjacent the source region and away from the planar gate near the top surface of the upper epitaxial layer, and extending laterally along a same direction as the body region, wherein the source region and the body contact region encompassed in the body region, and the source region extends laterally toward the shield trench electrode and terminates at a distance away in the upper epitaxial layer from the dielectric layer surrounding the shield trench electrode.
14. The power semiconductor device of claim 13 further comprising:
a channel region formed under the planar gate disposed at a lateral distance away from the shield trench electrode.
15. The power semiconductor of device claim 13 wherein:
the source region of the second conductivity type is an N-type dopant region encompassed in the body region of the first conductivity type as a P-type conductivity.
16. The power semiconductor device of claim 13 wherein:
the shield trench electrode is the first conductivity type opposite from the second conductivity type of the source region.