IP Library › Granted Patent US 10,686,098
Granted Patent B2
US 10,686,098 · App. 16/546,204 · Granted Jun 16, 2020

Nitride semiconductor light emitting element including electron blocking structure layer

Inventors: Koji Asada (Tokushima, JP); Tokutaro Okabe (Tokushima, JP)
Assignee: NICHIA CORPORATION
H01L33/32H01L33/06H01L33/145H01L33/36H01L33/025
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,686,098
App. No.
16/546,204
Granted
Jun 16, 2020
Kind
B2
Abstract

A nitride semiconductor light emitting element includes: an n-side layer; a p-side layer; an active layer disposed between the n-side layer and the p-side layer, the active layer comprising: a well layer containing Al, Ga, and N, and a barrier layer containing Al, Ga, and N, wherein an Al content of the barrier layer is higher than an Al content of the well layer; and an electron blocking structure layer between the active layer and the p-side layer, the electron blocking structure comprising: a first electron blocking layer disposed between the p-side layer and the active layer, a second electron blocking layer disposed between the p-side layer and the first electron blocking layer, and an intermediate layer disposed between the first electron blocking layer and the second electron blocking layer.

Claims (35)

1. A nitride semiconductor light emitting element comprising:

an n-side layer;

a p-side layer;

an active layer disposed between the n-side layer and the p-side layer, the active layer comprising:

a well layer containing Al, Ga, and N, and

a barrier layer containing Al, Ga, and N,

wherein an Al content of the barrier layer is higher than an Al content of the well layer; and

an electron blocking structure layer between the active layer and the p-side layer, the electron blocking structure comprising:

a first electron blocking layer disposed between the p-side layer and the active layer, wherein a bandgap of the first electron blocking layer is larger than a bandgap of the barrier layer,

a second electron blocking layer disposed between the p-side layer and the first electron blocking layer, wherein a bandgap of the second electron blocking layer is larger than the bandgap of the barrier layer, but smaller than the bandgap of the first electron blocking layer, and

an intermediate layer disposed between the first electron blocking layer and the second electron blocking layer, wherein a bandgap of the intermediate layer is smaller than the bandgap of the second electron blocking layer,

wherein the p-side layer comprises a p-side clad layer, and a bandgap of the p-side clad layer is smaller than the bandgap of the second electron blocking layer.

2. The nitride semiconductor light emitting element according to claim 1 , wherein the bandgap of the p-side clad layer is larger than the bandgap of the intermediate layer.

3. The nitride semiconductor light emitting element according to claim 1 , wherein the p-side clad layer is in contact with the second electron blocking layer.

4. The nitride semiconductor light emitting element according to claim 2 , wherein the p-side clad layer is in contact with the second electron blocking layer.

5. The nitride semiconductor light emitting element according to claim 1 , wherein the first electron blocking layer is in contact with the well layer.

6. The nitride semiconductor light emitting element according to claim 2 , wherein the first electron blocking layer is in contact with the well layer.

7. The nitride semiconductor light emitting element according to claim 3 , wherein the first electron blocking layer is in contact with the well layer.

8. The nitride semiconductor light emitting element according to claim 1 , wherein a thickness of the first electron blocking layer is smaller than a thickness of the second electron blocking layer.

9. The nitride semiconductor light emitting element according to claim 2 , wherein a thickness of the first electron blocking layer is smaller than a thickness of the second electron blocking layer.

10. The nitride semiconductor light emitting element according to claim 3 , wherein a thickness of the first electron blocking layer is smaller than a thickness of the second electron blocking layer.

11. The nitride semiconductor light emitting element according to claim 1 , wherein a thickness of the intermediate layer is smaller than a thickness of the second electron blocking layer.

12. The nitride semiconductor light emitting element according to claim 2 , wherein a thickness of the intermediate layer is smaller than a thickness of the second electron blocking layer.

13. The nitride semiconductor light emitting element according to claim 3 , wherein a thickness of the intermediate layer is smaller than a thickness of the second electron blocking layer.

14. The nitride semiconductor light emitting element according to claim 1 , wherein the bandgap of the intermediate layer is the same as or greater than the bandgap of the well layer.

15. The nitride semiconductor light emitting element according to claim 2 , wherein the bandgap of the intermediate layer is the same as or greater than the bandgap of the well layer.

16. The nitride semiconductor light emitting element according to claim 3 , wherein the bandgap of the intermediate layer is the same as or greater than the bandgap of the well layer.

17. The nitride semiconductor light emitting element according to claim 14 , wherein an emission peak wavelength of the nitride semiconductor light emitting element is in a range between 250 and 310 nm.

18. The nitride semiconductor light emitting element according to claim 17 , wherein the first electron blocking layer is made of AlN.

19. The nitride semiconductor light emitting element according to claim 17 , wherein the intermediate layer is made of AlGaN.

20. The nitride semiconductor light emitting element according to claim 17 , wherein the second electron blocking layer is made of AlGaN.

21. The nitride semiconductor light emitting element according to claim 18 , wherein a thickness of the first electron blocking layer is in a range of 0.9 to 2.0 nm.

22. The nitride semiconductor light emitting element according to claim 1 , wherein the first electron blocking layer is a non-doped layer that includes effectively no p-type impurities.

23. The nitride semiconductor light emitting element according to claim 2 , wherein the first electron blocking layer is a non-doped layer that includes effectively no p-type impurities.

24. The nitride semiconductor light emitting element according to claim 3 , wherein the first electron blocking layer is a non-doped layer that includes effectively no p-type impurities.

Priority Claims (1)
JP 2015-190294 · Sep 28, 2015 · national
Continuity (2)
Continuation 15763375
Related Publication 20190371968A1 · Dec 5, 2019