Impedance matching with restricted capacitor switching

1. An impedance matching network comprising:

an input configured to operably couple to a radio frequency (RF) source;

an output configured to operably couple to a plasma chamber for manufacturing a semiconductor;

a variable capacitor comprising:

a plurality of capacitors operably coupled in parallel, the plurality of capacitors comprising:

coarse capacitors comprising (a) first coarse capacitors each having a substantially similar first coarse capacitance; and (b) second coarse capacitors each having a substantially similar second coarse capacitance; and

fine capacitors having different capacitances that increase in value, wherein at least one of the fine capacitors has a capacitance greater than the first coarse capacitance;

a plurality of switches, wherein each switch of the plurality of switches is operably coupled in series with a corresponding capacitor of the plurality of capacitors and configured to switch in and out the corresponding capacitor;

wherein each capacitor of the plurality of capacitors provides a change to a total capacitance of the variable capacitor when the capacitor is switched in;

a control circuit operably coupled to the variable capacitor, the control circuit configured to (a) determine which of the coarse capacitors and the fine capacitors to have switched in to achieve an impedance match and (b) cause the determined coarse and fine capacitors to be switched in;

wherein the control circuit is further configured to cause a gradual increase in the total capacitance of the variable capacitor by:

switching in, in a predetermined order, each of the first coarse capacitors, followed by each of the second coarse capacitors; and

only switching in the fine capacitors whose capacitance is less than a capacitance of a next coarse capacitor of the coarse capacitors predetermined to be switched in next.

2. The matching network of claim 1 wherein only one of the fine capacitors has a capacitance greater than the first coarse capacitance.

3. The matching network of claim 2 wherein the one fine capacitor having a capacitance greater than the first coarse capacitance is restricted from switching in until all the first coarse capacitors are switched in.

4. The matching network of claim 1 wherein the control circuit is further configured to:

determine the variable impedance of the plasma chamber;

determine which of the coarse capacitors and the fine capacitors to have switched in to achieve an impedance match based on the determined variable impedance of the plasma chamber.

5. The matching network of claim 1 wherein the second coarse capacitance is at least twice the first coarse capacitance.

6. The matching network of claim 1 wherein:

the fine capacitors have capacitances substantially equal to 47 pF, 91 pF, 180 pF, 390 pF, 750 pF, 1500 pF;

the first coarse capacitors comprise six capacitors having capacitances substantially equal to 1000 pF;

the second course capacitors comprise twelve capacitors having capacitances substantially equal to 3000 pF; and

the substantially 1500 pF fine capacitor is restricted from switching in until all the first coarse capacitors are switched in.

7. The matching network of claim 1 wherein, for each of the fine capacitors increasing in capacitance, the change to the total capacitance that is provided by the fine capacitor when its corresponding switch is closed increases by a factor of about two.

8. A semiconductor processing tool comprising:

a plasma chamber configured to deposit a material onto a substrate or etch a material from the substrate; and

an impedance matching circuit operably coupled to the plasma chamber, matching circuit comprising:

an input configured to operably couple to an RF source;

an output configured to operably couple to the plasma chamber for manufacturing a semiconductor;

a variable capacitor comprising:

a plurality of capacitors operably coupled in parallel, the plurality of capacitors comprising:

coarse capacitors comprising (a) first coarse capacitors each having a substantially similar first coarse capacitance; and (b) second coarse capacitors each having a substantially similar second coarse capacitance; and

fine capacitors having different capacitances that increase in value, wherein at least one of the fine capacitors has a capacitance greater than the first coarse capacitance;

a plurality of switches, wherein each switch of the plurality of switches is operably coupled in series with a corresponding capacitor of the plurality of capacitors and configured to switch in and out the corresponding capacitor;

wherein each capacitor of the plurality of capacitors provides a change to a total capacitance of the variable capacitor when the capacitor is switched in;

a control circuit operably coupled to the variable capacitor, the control circuit configured to (a) determine which of the coarse capacitors and the fine capacitors to have switched in to achieve an impedance match and (b) cause the determined coarse and fine capacitors to be switched in;

wherein the control circuit is further configured to cause a gradual increase in the total capacitance of the variable capacitor by:

switching in, in a predetermined order, each of the first coarse capacitors, followed by each of the second coarse capacitors; and

only switching in the fine capacitors whose capacitance is less than a capacitance of a next coarse capacitor of the coarse capacitors predetermined to be switched in next.

9. The tool of claim 8 wherein only one of the fine capacitors has a capacitance greater than the first coarse capacitance.

10. The tool of claim 9 wherein the one fine capacitor having a capacitance greater than the first coarse capacitance is restricted from switching in until all the first coarse capacitors are switched in.

11. The tool of claim 8 wherein the control circuit is further configured to:

determine the variable impedance of the plasma chamber;

determine which of the coarse capacitors and the fine capacitors to have switched in to achieve an impedance match based on the determined variable impedance of the plasma chamber.

12. The tool of claim 8 wherein the second coarse capacitance is at least twice the first coarse capacitance.

13. The tool of claim 8 wherein, for each of the fine capacitors increasing in capacitance, the change to the total capacitance that is provided by the fine capacitor when its corresponding switch is closed increases by a factor of about two.

14. A method of matching an impedance comprising:

operably coupling an input of a matching network to an RF source;

operably coupling an output of the matching network to a plasma chamber for manufacturing a semiconductor, the matching network comprising:

a variable capacitor comprising:

a plurality of capacitors operably coupled in parallel, the plurality of capacitors comprising:

coarse capacitors comprising (a) first coarse capacitors each having a substantially similar first coarse capacitance; and (b) second coarse capacitors each having a substantially similar second coarse capacitance; and

fine capacitors having different capacitances that increase in value, wherein at least one of the fine capacitors has a capacitance greater than the first coarse capacitance;

a plurality of switches, wherein each switch of the plurality of switches is operably coupled in series with a corresponding capacitor of the plurality of capacitors and configured to switch in and out the corresponding capacitor;

wherein each capacitor of the plurality of capacitors provides a change to a total capacitance of the variable capacitor when the capacitor is switched in; and

a control circuit;

determining, by the control circuit, which of the coarse capacitors and the fine capacitors to have switched in to achieve an impedance match; and

causing, by the control circuit, the determined coarse and fine capacitors to be switched in;

wherein the control circuit is further configured to cause a gradual increase in the total capacitance of the variable capacitor by:

switching in, in a predetermined order, each of the first coarse capacitors, followed by each of the second coarse capacitors; and

only switching in the fine capacitors whose capacitance is less than a capacitance of a next coarse capacitor of the coarse capacitors predetermined to be switched in next.

15. The method of claim 14 wherein only one of the fine capacitors has a capacitance greater than the first coarse capacitance.

16. The method of claim 15 wherein the one fine capacitor having a capacitance greater than the first coarse capacitance is restricted from switching in until all the first coarse capacitors are switched in.

17. The method of claim 14 further comprising:

determining, by the control circuit, the variable impedance of the plasma chamber;

determining, by the control circuit, which of the coarse capacitors and the fine capacitors to have switched in to achieve an impedance match based on the determined variable impedance of the plasma chamber.

18. The method of claim 14 wherein the second coarse capacitance is at least twice the first coarse capacitance.

19. The method of claim 14 wherein:

the fine capacitors have capacitances substantially equal to 47 pF, 91 pF, 180 pF, 390 pF, 750 pF, 1500 pF;

the first coarse capacitors comprise six capacitors having capacitances substantially equal to 1000 pF;

the second course capacitors comprise twelve capacitors having capacitances substantially equal to 3000 pF; and

the substantially 1500 pF fine capacitor is restricted from switching in until all the first coarse capacitors are switched in.

20. The method of claim 14 wherein, for each of the fine capacitors increasing in capacitance, the change to the total capacitance that is provided by the fine capacitor when its corresponding switch is closed increases by a factor of about two.

21. A method of manufacturing a semiconductor, the method comprising:

operably coupling an input of a matching network to an RF source;

operably coupling an output of the matching network to a plasma chamber, plasma chamber configured to deposit a material layer onto the substrate or etch a material layer from the substrate, the matching network comprising:

a variable capacitor comprising:

a plurality of capacitors operably coupled in parallel, the plurality of capacitors comprising:

coarse capacitors comprising (a) first coarse capacitors each having a substantially similar first coarse capacitance; and (b) second coarse capacitors each having a substantially similar second coarse capacitance; and

fine capacitors having different capacitances that increase in value, wherein at least one of the fine capacitors has a capacitance greater than the first coarse capacitance;

a plurality of switches, wherein each switch of the plurality of switches is operably coupled in series with a corresponding capacitor of the plurality of capacitors and configured to switch in and out the corresponding capacitor;

wherein each capacitor of the plurality of capacitors provides a change to a total capacitance of the variable capacitor when the capacitor is switched in; and

a control circuit;

placing a substrate in the plasma chamber;

energizing plasma within the plasma chamber by coupling RF power from the RF source into the plasma chamber to perform a deposition or etching; and

determining, by the control circuit, which of the coarse capacitors and the fine capacitors to have switched in to achieve an impedance match; and

causing, by the control circuit, the determined coarse and fine capacitors to be switched in;

wherein the control circuit is further configured to cause a gradual increase in the total capacitance of the variable capacitor by:

switching in, in a predetermined order, each of the first coarse capacitors, followed by each of the second coarse capacitors; and

only switching in the fine capacitors whose capacitance is less than a capacitance of a next coarse capacitor of the coarse capacitors predetermined to be switched in next.