RF substrate bias with high power impulse magnetron sputtering (HIPIMS)
An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.
1. An apparatus for generating a high power impulse magnetron sputtering (“HIPIMS”) of a target to produce a coating on a substrate with a current density on a cathode of a magnetron between 0.1 and 10 A/cm 2 , said apparatus comprising:
a power supply operably connected to the magnetron to charge the magnetron and configured for administering a HIPIMS magnetron pulse to the magnetron;
a capacitor operably connected to the power supply;
a first switch configured for operably connecting the power supply to the magnetron to charge the magnetron by discharging said capacitor to administer the HIPIMS magnetron pulse to the magnetron;
an RF electrical bias device operably connected to the substrate and configured to discharge the magnetron according to an RF bias pulse; and
a synchronizer operably connected between the first switch and to the RF electrical bias device, wherein the synchronizer is configured to synchronize a frequency and a time delay of the HIPIMS magnetron pulse with the RF bias pulse such that the RF bias pulse is started first and then the HIPIMS magnetron pulse is applied through use of the first switch, wherein the RF electrical bias device provides a pre-ionization for the discharge of the magnetron,
wherein the synchronizer is configured to administer the RF bias pulse before the HIPIMS magnetron pulse with the time delay being between 0.1 μs to 500 μs and the power supply is configured to administer the HIPIMS magnetron pulse to the magnetron with an on-time pulse that starts with closing the first switch and ends with opening the first switch.
2. The apparatus according to claim 1 , wherein the power supply is configured for administering the HIPIMS magnetron pulse to the magnetron with a duty cycle for the HIPIMS magnetron pulse between 0.01% and 20%, and the frequency in a range of 1 Hz to 20 kHz.
3. The apparatus according to claim 1 , wherein the power supply is configured for administering the HIPIMS magnetron pulse to the magnetron with a duty cycle for the HIPIMS magnetron pulse between 2% and 50%.
4. The apparatus according to claim 1 , further comprising:
a matching unit configured to match a first impedance of a plasma with a second impedance of the substrate,
wherein the matching unit is operably connected between RF electrical bias device and a chuck that holds the substrate.
5. The apparatus according to claim 4 , further comprising:
a monitoring device operably connected to the chuck that holds the substrate,
wherein the monitoring device is configured to monitor an RF self-bias at the chuck, and
wherein the chuck is operably connected between the RF electrical bias device and the substrate.
6. The apparatus according to claim 1 , further comprising:
a coil operably connected to the at least one capacitor,
wherein the first switch is configured to discharge the magnetron according to the RF bias pulse.
7. An apparatus for generating a high power impulse magnetron sputtering (“HIPIMS”) of a target to produce a coating on a substrate with a current density on a cathode of a magnetron between 0.1 and 10 A/cm 2 , said apparatus comprising:
a power supply operably connected to the magnetron;
at least one capacitor operably connected to the power supply and to the magnetron;
a switch operably operably connecting the power supply to the magnetron to charge the magnetron by discharging said at least one capacitor and configured for administering a HIPIMS magnetron pulse to the magnetron;
an RF electrical bias device operably connected to the substrate and configured to apply an RF substrate bias pulse; and
a synchronizer operably connected to between the switch and to the RF electrical bias device, wherein the synchronizer is configured to synchronize a frequency and a time delay of the HIPIMS magnetron pulse with the RF substrate bias pulse such that the RF substrate bias pulse is started first and then the HIPIMS magnetron pulse is applied through use of the switch, wherein the RF electrical bias device provides a pre-ionization for discharge of the magnetron,
wherein the synchronizer is configured to administer the RF substrate bias pulse before the HIPIMS magnetron pulse with the time delay being between 0.1 μs to 500 μs and the power supply is configured to administer the HIPIMS magnetron pulse to the magnetron with an on-time pulse that starts with closing the switch and ends with opening the switch.
8. The apparatus according to claim 6 , further comprising a second switch connected at a point along the coil.
9. The apparatus according to claim 8 , wherein the coil includes a tap and wherein the second switch is connected between the tap and an anode of the magnetron.
10. The apparatus according to claim 8 , wherein the second switch connects a point between the coil and the magnetron to the RF electrical bias device.
11. The apparatus according to claim 1 , wherein the RF electrical bias device is operably connected to the magnetron.
12. The apparatus according to claim 1 , wherein the power supply is configured to administer HIPIMS magnetron pulses with the frequency in a range of 1 Hz to 20 kHz.