Semiconductor device
A semiconductor device includes: a substrate having a first region and a second region; a first fin-shaped structure on the first region and a second fin-shaped structure on the second region, wherein each of the first fin-shaped structure and the second fin-shaped structure comprises a top portion and a bottom portion; a first doped layer around the bottom portion of the first fin-shaped structure; a second doped layer around the bottom portion of the second fin-shaped structure; a first liner on the first doped layer; and a second liner on the second doped layer.
1. A semiconductor device, comprising:
a substrate having a fin-shaped structure thereon, wherein the fin-shaped structure comprises a top portion and a bottom portion;
a doped layer around the bottom portion of the fin-shaped structure;
a first liner on the doped layer;
a second liner on and directly contacting the top portion and the bottom portion of the fin-shaped structure; and
a shallow trench isolation (STI) around the first liner.
2. The semiconductor device of claim 1 , wherein the first liner and the second liner comprise different material.
3. The semiconductor device of claim 1 , further comprising a hard mask on the fin-shaped structure and the second liner.
4. The semiconductor device of claim 1 , wherein the doped layer comprises borosilicate glass (BSG) or phosphosilicate glass (PSG).
5. The semiconductor device of claim 1 , wherein top surfaces of the first liner and the doped layer are coplanar.
6. A semiconductor device, comprising:
a substrate having a fin-shaped structure thereon, wherein the fin-shaped structure comprises a top portion and a bottom portion;
a doped layer around the bottom portion of the fin-shaped structure;
a first liner on the doped layer;
a second liner on and directly contacting the top portion and the bottom portion of the fin-shaped structure; and
a hard mask on the fin-shaped structure and the second liner.