Solid-state image sensing device, drive method, and electronic apparatus
The present disclosure relates to a solid-state image sensing device, a drive method, and an electronic apparatus that suppress the color mixture of a phase difference detection signal to an image sensing signal. The solid-state image sensing device has a pixel area arranged with a plurality of pixels in which a first photoelectrical conversion section for photoelectrically converting a visible light of a first wavelength range and a second photoelectrical conversion section for photoelectrically converting a visible light of a second wavelength range are formed in different depths as viewed from a cross-sectional direction. Further, in each of the above-mentioned plurality of pixels, at least one of the first photoelectrical conversion section and the second photoelectrical conversion section is divided when viewed from a planar direction. The present technology is applicable to a solid-state image sensing device capable of detecting an image plane phase difference, for example.
1. An imaging device, comprising:
a first photoelectric conversion region in a semiconductor substrate, the first photoelectric conversion region being electrically coupled to a first amplification transistor at a first surface of the semiconductor substrate; and
a second photoelectric conversion region in the semiconductor substrate, the second photoelectric conversion region being electrically coupled to a second amplification transistor at the first surface of the semiconductor substrate, wherein
the first photoelectric conversion region is between a part of the second photoelectric conversion region and the first surface of the semiconductor substrate, and
at least one of the first photoelectric conversion region and the second photoelectric conversion region is divided into two portions in a plan view.
2. The imaging device according to claim 1 , wherein the first surface of the semiconductor substrate is a light incident side of the semiconductor substrate.
3. The imaging device according to claim 1 , wherein
the first surface of the semiconductor substrate is opposite a second surface of the semiconductor substrate, and
the second surface is a light incident side of the semiconductor substrate.
4. The imaging device according to claim 1 , wherein the first photoelectric conversion region is divided into the two portions in the plan view.
5. The imaging device according to claim 4 , further comprising:
a first transfer transistor electrically coupled to a first portion of the two portions of the first photoelectric conversion region; and
a second transfer transistor electrically coupled to a second portion of the two portions of the first photoelectric conversion region, wherein the second portion of the two portions is different from the first portion of the two portions.
6. The imaging device according to claim 4 , wherein a phase difference is detected from outputs from the two portions of the first photoelectric conversion region.
7. The imaging device according to claim 1 , wherein the second photoelectric conversion region is divided into the two portions in the plan view.
8. The imaging device according to claim 7 , further comprising:
a first transfer transistor electrically coupled to a first portion of the two portions of the second photoelectric conversion region; and
a second transfer transistor electrically coupled to a second portion of the two portions of the second photoelectric conversion region, wherein the second portion of the two portions is different from the first portion of the two portions.
9. The imaging device according to claim 7 , wherein a phase difference is detected from outputs from the two portions of the second photoelectric conversion region.
10. The imaging device according to claim 8 , wherein
a part of the first transfer transistor is in the semiconductor substrate, and wherein
a part the second transfer transistor is in the semiconductor substrate.
11. The imaging device according to claim 1 , wherein
the first photoelectric conversion region is divided into the two portions along a first direction in the plan view, and
the second photoelectric conversion region is divided into the two portions along a second direction in the plan view.
12. The imaging device according to claim 11 , wherein the first direction is perpendicular to the second direction.
13. The imaging device according to claim 11 , further comprising:
a first transfer transistor electrically coupled to a first portion of the two portions of the first photoelectric conversion region;
a second transfer transistor electrically coupled to a second portion of the two portions of the first photoelectric conversion region, wherein the second portion of the two portions of the first photoelectric conversion region is different from the first portion of the two portions of the first photoelectric conversion region;
a third transfer transistor electrically coupled to a first portion of the two portions of the second photoelectric conversion region; and
a fourth transfer transistor electrically coupled to the other a second portion of the two portions of the second photoelectric conversion region, wherein the second portion of the two portions of the second photoelectric conversion region is different from the first portion of the two portions of the second photoelectric conversion region.
14. The imaging device according to claim 11 , wherein a first phase difference is detected from outputs from the two portions of the first photoelectric conversion region and a second phase difference is detected from outputs from the two portions of the second photoelectric conversion region.
15. The imaging device according to claim 1 , further comprising an on-chip lens above the first photoelectric conversion region and the second photoelectric conversion region.
16. The imaging device according to claim 1 , further comprising a color filter above the first photoelectric conversion region and the second photoelectric conversion region.
17. The imaging device according to claim 16 , wherein the color filter is configured to transmit light with a magenta color.
18. The imaging device according to claim 1 , further comprising an organic photoelectric conversion film above the first photoelectric conversion region and the second photoelectric conversion region.
19. The imaging device according to claim 18 , wherein the organic photoelectric conversion film is configured to transmit light with a green color.
20. An electronic apparatus, comprising:
an imaging device comprising:
a first photoelectric conversion region in a semiconductor substrate, the first photoelectric conversion region being electrically coupled to a first amplification transistor at a first surface of the semiconductor substrate; and
a second photoelectric conversion region in the semiconductor substrate, the second photoelectric conversion region being electrically coupled to a second amplification transistor at the first surface of the semiconductor substrate, wherein
the first photoelectric conversion region is between a part of the second photoelectric conversion region and the first surface of the semiconductor substrate, and
at least one of the first photoelectric conversion region and the second photoelectric conversion region is divided into two portions in a plan view;
an optical system configured to guide an incident light to the imaging device;
a signal processing circuitry configured to process a signal output from the imaging device;
a memory configured to store image data output from the signal processing circuitry; and
a monitor configured to display the image data.