Method of manufacturing a semiconductor device including non-volatile memory cells

1. A method of forming a semiconductor device including a non-volatile memory (NVM) cell, the method comprising:

forming a semiconductor wire over an insulating layer disposed on a substrate;

forming a gate dielectric layer around the semiconductor wire;

forming a select gate electrode around the semiconductor wire wrapped by the gate dielectric layer;

forming a stacked dielectric layer around the semiconductor wire not covered by the select gate electrode and over the select gate electrode; and

forming a control gate electrode around the semiconductor wire wrapped by the stacked dielectric layer and adjacent to one face of the select gate electrode with a part of the stacked dielectric layer interposed therebetween.

2. The method of claim 1 , wherein the forming the semiconductor wire includes:

forming a mask pattern on a semiconductor layer disposed on the insulating layer;

patterning the semiconductor layer by using the mask pattern as an etching mask; and

removing part of the insulating layer, thereby forming the semiconductor wire.

3. The method of claim 2 , wherein before forming the mask pattern, a doped layer is formed in the semiconductor layer by one or more ion implantation operations.

4. The method of claim 2 , wherein after the forming the semiconductor wire, one or more ion implantation operations are performed, thereby introducing impurities into the semiconductor wire.

5. The method of claim 1 , wherein the forming the semiconductor wire includes:

forming a mask pattern on the substrate;

etching the substrate, thereby forming a recess in the substrate and the semiconductor wire disposed over the recess; and

forming the insulating layer in the recess.

6. The method of claim 5 , wherein before forming the mask pattern, a doped layer is formed in the substrate by one or more ion implantation operations.

7. The method of claim 5 , wherein after the forming the semiconductor wire, one or more ion implantation operations are performed, thereby introducing impurities into the semiconductor wire.

8. The method of claim 1 , wherein the stacked dielectric layer includes a first dielectric layer disposed on the control gate portion of the semiconductor wire, a second dielectric layer disposed on the first dielectric layer, and a third dielectric layer disposed on the second dielectric layer.

9. The method of claim 8 , wherein the second dielectric layer includes one or more materials selected from the group consisting of SiN, SiON, HfO 2 , ZrO 2 and Si-dots.

10. The method of claim 8 , further comprising, after the control gate electrode is formed, removing a part of the third and second dielectric layers from an upper surface of the select gate electrode and the semiconductor wire.

11. The method of claim 10 , wherein a part of the stacked dielectric layer remains between the control gate and the insulating layer.

12. The method of claim 1 , further comprising, after the select gate electrode is formed, removing a part of the gate dielectric layer not covered by the select gate electrode.

13. The method of claim 12 , wherein a part of the gate dielectric layer remains between the select gate and the insulating layer.

14. The method of claim 1 , wherein the control gate electrode is formed by:

forming a conductive material over the stacked dielectric layer;

performing an etch-back operation on the conductive material, thereby leaving sidewalls of the conductive material on opposing sides of the select gate electrode covered by the stacked dielectric layer; and

removing one of the sidewalls of the conductive material from one side of the select gate electrode, thereby forming the control gate electrode.

15. The method of claim 14 , wherein:

after the etch-back operation, a part of the conductive material remains on opposing sides of the semiconductor wire covered by the stacked dielectric layer, and

in the removing one of the sidewalls of the conductive material, the part of the conductive material remains on opposing sides of the semiconductor wire is removed.

16. A method of forming a semiconductor device including a non-volatile memory (NVM) cell, the method comprising:

forming a semiconductor wire over an insulating layer disposed on a substrate;

forming a gate dielectric layer around the semiconductor wire;

forming a pair of select gate electrodes around the semiconductor wire wrapped by the gate dielectric layer;

forming a stacked dielectric layer around the semiconductor wire not covered by the pair of select gate electrodes and over the pair of select gate electrodes; and

forming a pair of control gate electrodes around the semiconductor wire wrapped by the stacked dielectric layer and adjacent to the pair of select gate electrodes, respectively, with a part of the stacked dielectric layer interposed therebetween.

17. The method of claim 16 , wherein the pair of control gate electrodes are formed by:

forming a conductive material over the stacked dielectric layer;

performing an etch-back operation on the conductive material, thereby leaving sidewalls of the conductive material on opposing sides of each of the pair of select gate electrodes covered by the stacked dielectric layer; and

removing ones of the sidewalls of the conductive material from one side of each of the pair of select gate electrodes, thereby forming the pair of control gate electrodes.

18. The method of claim 17 , wherein the pair of select gate electrodes are disposed between the pair of control gate electrodes.

19. The method of claim 17 , wherein:

after the etch-back operation, a part of the conductive material remains on opposing sides of the semiconductor wire covered by the stacked dielectric layer, and

in the removing one of the sidewalls of the conductive material, the part of the conductive material remains on opposing sides of the semiconductor wire is removed.

20. A method of forming a semiconductor device including a non-volatile memory (NVM) cell, the method comprising:

forming a mask pattern on a semiconductor layer disposed on an insulating layer disposed over a substrate;

patterning the semiconductor layer by using the mask pattern as an etching mask;

removing part of the insulating layer, thereby forming a semiconductor wire;

forming a gate dielectric layer around the semiconductor wire;

forming a pair of select gate electrodes around the semiconductor wire wrapped by the gate dielectric layer;

forming a stacked dielectric layer around the semiconductor wire not covered by the pair of select gate electrodes and over the pair of select gate electrodes; and

forming a pair of control gate electrodes around the semiconductor wire wrapped by the stacked dielectric layer and adjacent to the pair of select gate electrodes, respectively, with a part of the stacked dielectric layer interposed therebetween.