Method for manufacturing tunnel junction layer
A method for manufacturing a tunnel junction layer using organic vapor phase deposition, the method including: a first process that supplies a first material gas containing a group III element, a second material gas containing a group V element, and a third material gas containing a dopant of a first conductivity type, onto a compound semiconductor layer on which the tunnel junction layer is to be laminated; a second process that stops supplying the first material gas, the second material gas and the third material gas, and supplies a fourth material gas containing a dopant of a second conductivity type opposite to the first conductivity type; and a third process that continues to supply the fourth material gas, and further supplies a fifth material gas containing a group III element and a sixth material gas containing a group V element.
1. A method for manufacturing a tunnel junction layer using organic vapor phase deposition, the method comprising:
a first process that supplies a first material gas containing a group III element, a second material gas containing a group V element, and a third material gas containing a dopant of a first conductivity type, onto a compound semiconductor layer on which the tunnel junction layer is to be laminated;
a second process that stops supplying the first material gas, the second material gas and the third material gas, and supplies a fourth material gas containing a dopant of a second conductivity type opposite to the first conductivity type; and
a third process that continues to supply the fourth material gas, and further supplies a fifth material gas containing a group III element and a sixth material gas containing a group V element.
2. The method for manufacturing a tunnel junction layer according to claim 1 , wherein
the first material gas contains Al and Ga as group III elements,
the second material gas contains As as a group V element,
the third material gas contains C as a dopant of the first conductivity type,
the fourth material gas contains Te as a dopant of the second conductivity type,
the fifth material gas contains Ga and In as group III elements, and
the sixth material gas contains P as a group V element.
3. The method for manufacturing a tunnel junction layer according to claim 1 , wherein the compound semiconductor layer on which the tunnel junction layer is to be laminated contains Al, Ga, and As.
4. The method for manufacturing a tunnel junction layer according to claim 1 , wherein
the first process increases a flow rate of the third material gas with a lapse of time, and
the third process decreases a flow rate of the fourth material gas with a lapse of time.
5. The method for manufacturing a tunnel junction layer according to claim 1 , wherein a temperature of an object on which the tunnel junction layer is to be laminated is lowered by 100 C° to 150 C° from a temperature at which the compound semiconductor layer was grown before starting the first process, and, after finishing the third process, the temperature of the object on which the tunnel junction layer has been laminated is increased by 100 C° to 150 C°.