Sensor component with cap over trench and sensor elements
A component is provided comprising at least one substrate, at least one magnetic field sensor and at least one trench in the at least one substrate surrounds the at least one magnetic field sensor at least partially. At least one cap covers the at least one trench and the at least one magnetic field sensor, and at least one layer element arranged between the at least one cap and the at least one substrate.
1. A component comprising:
at least one substrate;
at least one magnetic field sensor;
at least one trench in the at least one substrate surrounding the at least one magnetic field sensor at least partially;
at least one cap covering the at least one trench and the at least one magnetic field sensor; and
two layer elements arranged between the at least one cap and the at least one substrate;
wherein the two layer elements and the at least one trench are arranged to form a cavity therebetween;
and wherein the two layer elements are selected from a group comprising a polyimide layer and a die attach film.
2. The component according to claim 1 , wherein the at least one trench surrounds substantially the at least one magnetic field sensor, in order to form an island, and further has a connecting bridge.
3. The component according to claim 2 , further comprising conductor paths, diffusions or bonding connections, which contact the electronic connections of the at least one magnetic field sensors and are guided over the connecting bridge.
4. The component according to claim 1 , wherein the at least one magnetic field sensor is integrated in the substrate.
5. The component according to claim 1 , wherein the at least one magnetic field sensor is a Hall sensor.
6. The component according to claim 1 , wherein the at least one magnetic field sensor has a depth which is at least 5 μm or one twentieth of the diagonal of the magnetic field sensor and the at least one trench has a depth which is at least 5 μm or one twentieth of the diagonal of the at least one magnetic field sensor.
7. The component according to claim 1 , wherein the at least one trench penetrates the at least one semiconductor substrate fully.
8. The component according to claim 1 , wherein the width of the at least one trench is less than 100 μm.
9. The component according to claim 1 , wherein the at least one trench is filled with a filling material such as a polymer or polyimide.
10. The component according to claim 1 , wherein the surface of the trench has an encapsulation layer.
11. The component according to claim 10 , wherein the encapsulation layer is a nitride.
12. The component according to claim 1 , wherein the trench is produced by laser removal.
13. The component according to claim 1 , wherein the at least one cap is a Hall sensor.