Generative production device comprising a measuring device
A device for the layer-wise additive production of a complex three-dimensional component has a measuring mechanism for continuously monitoring quality indicators during the production of the component, wherein the measuring mechanism and a bed with a material powder are surrounded, at least in regions, by a processing cell filled with a protective gas atmosphere and the material powder of an uppermost layer can be melted in a locally limited manner in a melting zone by means of at least one laser. The measuring mechanism has the at least one laser and at least one optical sensor for the priority detection of the quality indicators in the region of the melting zone, in particular by means of Raman spectroscopy. Consequently, any construction errors in the component can be recognised, evaluated and, if necessary, corrected in a resource-saving manner without delay.
1. A device for the layer-wise additive production of a three-dimensional component, comprising:
a measuring mechanism for continuously monitoring quality indicators, during the production of the component, and
a first guide system,
wherein the measuring mechanism and a bed with a material powder are surrounded, at least in regions, by a processing cell filled with a protective gas atmosphere and the material powder of an uppermost layer can be melted in a locally limited manner in a melting zone by at least one laser, and
wherein the measuring mechanism has the at least one laser and at least one optical sensor for the priority detection of the quality indicators in the region of the melting zone,
wherein the quality indicators comprise at least one of the temperature and a chemical composition of the protective gas atmosphere, and
wherein the at least one laser is configured to be freely positioned in space within the processing cell by the first guide system.
2. The device of the claim 1 , wherein the at least one optical sensor is configured to detect the quality indicators by Raman spectroscopy.
3. The device of claim 1 , wherein the optical sensor is configured to track the melting zone by a second guide system.
4. The device of claim 1 , wherein the optical sensor is configured to detect a working region of the laser.
5. The device of claim 1 , wherein the optical sensor is configured to detect at least one predefined and fixed region.
6. The device of claim 1 , wherein an optical system is associated with at least one of the laser and the optical sensor.
7. The device of claim 1 , wherein the optical sensor is integrated in the first guide system of the at least one laser to spatially position the laser with respect to the component.
8. The device of claim 7 , wherein a semi-permeable mirror is configured to deflect laser radiation emitted by the at least one laser onto the material powder of the uppermost layer of the bed, and
wherein the at least one optical sensor is configured to receive a measuring radiation scattered by the material powder, after the deflection-free passage through the mirror.
9. The device of claim 7 , wherein a semi-permeable mirror is configured to transmit laser radiation emitted by the at least one laser in a deflection-free manner, and
wherein the at least one optical sensor is configured to receive a measuring radiation scattered by the material powder of the uppermost layer of the bed, after a deflection by the mirror.
10. The device of claim 1 , wherein the at least one optical sensor and an optical system associated therewith are arranged about a first axis, wherein the first axis is coaxial with a second axis of the at least one laser.
11. The device of claim 1 , wherein an electronic evaluation unit is associated with the measuring mechanism.
12. The device of claim 1 , wherein the at least one optical sensor is configured to contactlessly detect at least one of a spatial position of the melting zone in relation to the component and a temperature in the region of the melting zone.
13. The device of claim 12 , wherein the temperature in the region of the melting zone is configured to be detected by the detection of an infrared radiation quantity or by the at least one sensor.
14. The device of claim 12 , wherein the temperature in the region of the melting zone is configured to be detected by the detection of a rotational Raman radiation by the at least one sensor.
15. The device of claim 1 , wherein at least one of oxygen and other gases within the protective gas atmosphere is configured to be detected by an infrared line absorption by at least one sensor and a measuring laser.
16. The device of claim 1 , wherein at least one of oxygen and other gases within the protective gas atmosphere is configured to be detected by a Raman shift by at least one sensor and a measuring laser.
17. The device of claim 1 , wherein at least one of oxygen and other gases in the protective gas atmosphere is configured to be detected with at least one of the aid of a dye and an intensity of the measuring radiation scattered on the material powder by the at least one sensor and the at least one laser, wherein the quality indicators can be determined by means of the evaluation unit.
18. The device of claim 17 , wherein the quality indicators comprise an oxidation of the component and a degree of crystallinity in the melting zone.