Metal oxide/silicon dioxide-coated quantum dot and method for preparing same

1. A method for preparing a metal oxide/silicon dioxide-coated quantum dot, comprising:

(1) adding a quantum dot solution, a silylating agent and a metal oxide-corresponding metal precursor into a high-pressure reactor to produce a mixture and feeding nitrogen to remove oxygen from the high-pressure reactor;

(2) standing and subjecting the mixture to a pyrolysis reaction; and

(3) centrifuging the resulting product after completing the pyrolysis reaction to remove the unreacted quantum dot solution, and calcinating the resulting product to obtain the metal oxide/silicon dioxide-coated quantum dot;

wherein the metal oxide/silicon dioxide is selected from aluminum oxide/silicon dioxide, zirconium dioxide/silicon dioxide, titanium dioxide/silicon dioxide or zinc oxide/silicon dioxide, and a content of the metal oxide/silicon dioxide in the metal oxide/silicon dioxide-coated quantum dot is 1 to 98 wt %.

2. The method of claim 1 , wherein the silylating agent is selected from tetramethoxysilane or tetraethoxysilane.

3. The method of claim 1 , wherein the metal oxide-corresponding metal precursor is selected from an aluminum precursor, a zirconium precursor, a titanium precursor or a zinc precursor;

wherein the aluminum precursor is selected from the group consisting of aluminum isopropoxide, aluminum tri-sec-butoxide, aluminum acetylacetonate and lithium tri-tert-butoxyaluminum hydride;

the zirconium precursor is selected from the group consisting of zirconium propoxide, zirconium n-butoxide and zirconium acetylacetonate;

the titanium precursor is tetraisopropyl titanate; and

the zinc precursor is diethylzinc.

4. The method of claim 1 , wherein in step (1), di-sec-butoxyaluminoxytriethoxysilane is used as both the silylating agent and the metal oxide-corresponding metal precursor as an aluminum precursor when the metal oxide/silicon dioxide is aluminum oxide/silicon dioxide.

5. The method of claim 1 , wherein the pyrolysis reaction is carried out at a temperature of 160° C. to 220° C. for 6 to 24 hours, and a calcinating temperature is 50° C. to 150° C.

6. The method of claim 1 , wherein in step (1), the quantum dot solution is a solution of a non-core-shell quantum dot or a core-shell quantum dot.

7. The method of claim 6 , wherein the non-core-shell quantum dot is selected from a binary quantum dot, a ternary quantum dot, a quaternary quantum dot, a doped binary quantum dot, a doped ternary quantum dot or a doped quaternary quantum dot;

wherein the binary quantum dot is AX 1 , where A is selected from the group consisting of bismuth, cadmium, zinc, mercury, lead, tin, gallium, indium, calcium, strontium, cesium, magnesium, barium and copper, and X 1 is selected from the group consisting of sulfur, selenium, nitrogen, phosphorus, arsenic, tellurium and antimony;

the ternary quantum dot is A 1 A 2 X 2 , where each of A 1 and A 2 is selected from the group consisting of methylamino, bismuth, cesium, cadmium, zinc, mercury, lead, tin, gallium, indium, calcium, magnesium, strontium, barium and copper, A 1 is different from A 2 , and X 2 is selected from sulfur, selenium, nitrogen, phosphorus, arsenic, tellurium, chlorine, bromine, iodine and antimony;

the quaternary quantum dot is A 1 A 2 A 3 X 3 , where each of A 1 , A 2 and A 3 is selected from the group consisting of cadmium, zinc, mercury, lead, tin, gallium, indium, calcium, cesium, magnesium, strontium, barium and copper, A 1 , A 2 and A 3 are different from each other, and X 3 is selected from sulfur, selenium, phosphorus, arsenic, tellurium or antimony; and

a doping element for a doped quantum dot is selected from the group consisting of magnesium, calcium, barium, strontium, aluminum, boron, zirconium, chromium, titanium, silver, gallium, hafnium, indium, bismuth, cobalt, copper, manganese, nickel, iron, tantalum and silicon.

8. The method of claim 6 , wherein the core-shell quantum dot comprises a core quantum dot and a shell, wherein the core quantum dot is selected from a binary quantum dot, a ternary quantum dot, a quaternary quantum dot, a doped binary quantum dot, a doped ternary quantum dot or a doped quaternary quantum dot; and the shell comprises a main body made of a semiconductor material selected from Group II-VI, II-V, III-VI, III-V, IV-VI, II-IV-V or II-IV-VI elements, the semiconductor material being selected from the group consisting of cadmium selenide, zinc selenide, mercury selenide, cadmium sulfide, zinc sulfide, mercury sulfide, cadmium telluride, zinc telluride, cadmium telluride, gallium nitride, indium nitride, gallium phosphide, gallium antimonide, indium gallium phosphide, zinc cadmium selenide and cadmium zinc sulfide; and

a doped core-shell quantum dot comprises a doping element which is located in at least one of the core quantum dot and the shell, and the doping element is selected from the group consisting of magnesium, calcium, barium, strontium, aluminum, boron, zirconium, chromium, titanium, silver, gallium, hafnium, indium, bismuth, cobalt, copper, manganese, nickel, iron, tantalum and silicon.