IP Library Granted Patent US 10,697,065
Granted Patent B2
US 10,697,065 · App. 15/769,699 · Granted Jun 30, 2020

Sam assisted selective e-less plating on packaging materials

Inventors: Fay Hua (Fremont, CA); Aranzazu Maestre Caro (Hillsboro, OR)
Assignee: Intel Corporation
C23C18/2006C23C18/165H01L21/481H01L21/4846H05K3/4629
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Quick Facts
Patent No.
US 10,697,065
App. No.
15/769,699
Granted
Jun 30, 2020
Kind
B2
Abstract

A method including activating an area of a polymer layer on a substrate with electromagnetic radiation; modifying the activated area; forming a self-assembled monolayer on the modified active area; reacting the self-assembled monolayer with the self-assembled monolayer; and reacting the self-assembled monolayer with a conductive material. A method including activating an area of a polymer dielectric layer on a substrate with electromagnetic radiation, the area selected for an electrically conductive line; modifying the activated area; forming a self-assembled monolayer on the modified active area; reacting the self-assembled monolayer with a catalyst; and electroless plating a conductive material on the self-assembled monolayer.

Claims (27)

1. An integrated circuit chip package substrate comprising a plurality of conductive lines formed on a radiation-activated dielectric material, the conductive lines formed of conductive material chemically bonded to the dielectric material through a self-assembled monolayer.

2. The substrate of claim 1 , wherein the conductive material is chemically bonded to the self-assembled monolayer through a catalyst.

3. The substrate of claim 1 , wherein the dielectric material comprises a polymer material.

4. A method comprising:

activating an area of a polymer layer on a package substrate by exposing portions of a surface of the polymer layer to electromagnetic radiation;

modifying the activated area;

forming a self-assembled monolayer on the modified active area;

reacting the self-assembled monolayer with a catalyst; and

reacting the self-assembled monolayer with a conductive material.

5. The method of claim 4 , wherein modifying the activated area comprises forming a hydroxyl ion rich area.

6. The method of claim 4 , wherein the self-assembled monolayer comprises a functional group operable to react with the catalyst.

7. The method of claim 6 , wherein the functional group comprises one of an amine moiety, a sulfhydryl moiety and a pyridil moiety.

8. The method of claim 4 , wherein the catalyst is a metal and reacting the self-assembled monolayer with a conductive material comprises reducing the catalyst in a bath comprising a reducing agent and an ionic form of the conductive material.

9. The method of claim 8 , wherein reacting the self-assembled monolayer with a conductive material comprises reducing the state of the ionic form of conductive material.

10. A method comprising:

activating an area of a polymer dielectric layer on a substrate by exposing portions of a surface of the polymer layer to electromagnetic radiation, the area selected for an electrically conductive line;

modifying the activated area;

forming a self-assembled monolayer on the modified active area;

reacting the self-assembled monolayer with a catalyst; and

electroless plating a conductive material on the self-assembled monolayer.

11. The method of claim 10 , wherein modifying the activated area comprises forming a hydroxyl ion rich area.

12. The method of claim 10 , wherein the self-assembled monolayer comprises a functional group operable to react with the catalyst.

13. The method of claim 12 , wherein the functional group comprises one of an amine moiety, a sulfhydryl moiety and a pyridil moiety.

14. The method of claim 10 , wherein the catalyst comprises palladium.

15. The method of claim 10 , wherein electroless plating a conductive material comprises reducing the catalyst in a bath comprising a reducing agent that is oxidized.

16. The method of claim 15 , wherein the bath comprises an ionic form of the conductive material in an oxidized state and electroless plating a conductive material comprises reducing the state of the ionic form of the conductive material.

17. The method of claim 10 , wherein the substrate comprises a package substrate.

Continuity (2)
Continuation 14954359 · Nov 30, 2015
Related Publication 20180305818A1 · Oct 25, 2018
Cited By (5)
US 12,209,164 US 12,230,865 US 12,294,185 US 12,428,522 US 12,441,879