Scalable quantum-confined device

1. A quantum-confined device, comprising:

a substrate having at least one protrusion arranged thereupon; and

a layer of a two-dimensional material,

wherein the layer of the two-dimensional material is arranged on the substrate and the at least one protrusion, the at least one protrusion causing localised strain in the layer of the two-dimensional material to form a quantum dot or a quantum wire at a region of localised strain.

2. The device of claim 1 , wherein the layer of the two-dimensional material is an exfoliated flake of the two-dimensional material or is a grown or deposited thin film of the two-dimensional material.

3. The device of claim 1 , wherein the at least one protrusion has a length and a width in a plane parallel to the substrate, wherein the length and the width have a ratio of less than two, and the region of localised strain forms a quantum dot.

4. The device of claim 3 , wherein the at least one protrusion comprises at least one of a column, a pillar, a pyramid or a cone, and wherein the at least one protrusion has a cross-sectional shape in the plane parallel to the substrate from at least one of the following group: circular, rectangular, square, hexagonal, polygonal.

5. The device of claim 1 , wherein the at least one protrusion comprises at least one ridge, and the region of localised strain forms a quantum wire.

6. The device of claim 1 , wherein a height of the at least one protrusion is less than 1 μm.

7. The device of any of claim 1 , wherein the at least one protrusion arranged on the substrate comprises an arrangement of at least one nanocrystal on the surface of the substrate.

8. The device of any of claim 1 , wherein the at least one protrusion arranged on the substrate comprises at least one protrusion formed by patterning on a surface of the substrate.

9. The device of claim 1 , further comprising an epitaxial layer formed on the substrate, the at least one protrusion arranged on the epitaxial layer.

10. The device of claim 9 , wherein the at least one protrusion comprises an arrangement of at least one nanocrystal on the surface of the epitaxial layer or comprises at least one protrusion patterned in the epitaxial layer.

11. The device of claim 1 , wherein the at least one protrusion comprises an array of protrusions forming an array of quantum dots and/or an array of quantum wires.

12. The device of claim 1 , wherein the device forms a quantum dot based light emitter or a quantum emitter.

13. The device of claim 12 , wherein the emitter is a single photon source.

14. The device of claim 1 , wherein each monolayer of the two-dimensional material has an inherently two-dimensional crystalline structure.

15. The device of claim 1 , wherein the layer of the two-dimensional material is formed from at least one monolayer of a two-dimensional material, each monolayer of the two-dimensional material having a two-dimensional crystalline structure in which atoms are chemically bonded only within a plane of each monolayer or sheet.

16. A quantum emitter device, comprising:

a substrate having at least one protrusion arranged thereupon; and

a layer of a two-dimensional material,

wherein the layer of the two-dimensional material is arranged on the substrate and the at least one protrusion, the at least one protrusion causing localised strain in the layer of the two-dimensional material to form a quantum emitter at regions of localised strain.

17. A method of manufacturing a quantum-confined device, comprising:

providing a substrate;

forming at least one protrusion on the substrate;

arranging on the substrate and the at least one protrusion a layer of a two-dimensional material, the at least one protrusion causing localised strain in the layer of the two-dimensional material to form a quantum dot or a quantum wire at the region of localised strain.

18. The method of claim 17 , further comprising exfoliating a flake of the two-dimensional semiconductor material, and wherein arranging the layer of the two-dimensional semiconductor material comprises arranging the exfoliated flake on the substrate and the at least one protrusion.

19. The method of claim 17 , wherein arranging the layer of the two-dimensional semiconductor material comprises growing or depositing a thin film of the two-dimensional material.

20. The method of claim 17 , wherein forming the at least one protrusion comprises arranging at least one nanocrystal on the surface of the substrate, or comprises forming an etched pattern in the surface at the substrate.