Power conversion device
A power conversion device includes a power semiconductor switching device and a drive circuit. The power semiconductor switching device is configured to supply constant power to a load by switching and to be turned on and off by a control signal from an external control circuit. The drive circuit is configured to detect an operating temperature of the power semiconductor switching device and drive the power semiconductor switching device according to a result of the detection. The drive circuit includes a temperature detecting unit configured to receive the control signal from the external control circuit and detect the operating temperature of the power semiconductor switching device at timings according to the control signal.
1. A power conversion device comprising:
a power semiconductor switching device configured to supply constant power to a load by switching and to be turned on and off by a control signal from an external control circuit; and
a drive circuit configured to detect an operating temperature of the power semiconductor switching device and drive the power semiconductor switching device according to a result of the detection, the drive circuit including a temperature detecting unit configured to receive the control signal from the external control circuit, to detect the operating temperature of the power semiconductor switching device based on the control signal turning the power semiconductor switching device on and off, such that when the temperature detecting unit receives a control signal in a first state from the external control circuit to turn off the power semiconductor switching device, the detected operating temperature of the power semiconductor switching device at a time the temperature detecting unit received the control signal in the first state is fixed until a next control signal in the first state is received by the temperature detecting unit from the external control circuit.
2. The power conversion device according to claim 1 , wherein the temperature detecting unit includes:
a comparator configured to compare an output voltage that is based on the operating temperature and output from a temperature detector configured to detect the operating temperature of the power semiconductor switching device, with a reference voltage corresponding to a predetermined temperature; and
a latch circuit configured to latch a result of the comparison by the comparator, based on the control signal.
3. The power conversion device according to claim 2 , wherein
the temperature detecting unit includes a plurality of comparators each configured to compare the output voltage with a different one of respective reference voltages,
the latch circuit is configured to latch results of the comparisons by the plurality of comparators, and
the temperature detecting unit further includes a selection circuit configured to selectively output the plurality of comparison results latched by the latch circuit.
4. A power conversion device comprising:
a power semiconductor switching device configured to supply constant power to a load by switching and to be turned on and off by a control signal from an external control circuit; and
a drive circuit configured to detect an operating temperature of the power semiconductor switching device and drive the power semiconductor switching device according to a result of the detection, the drive circuit including a temperature detecting unit configured to receive the control signal from the external control circuit and detect the operating temperature of the power semiconductor switching device at timings according to the control signal, the temperature detecting unit including:
an inverting amplifier configured to invert and amplify a voltage that is based on a temperature of the power semiconductor switching device and output from a temperature detector configured to detect the temperature of the power semiconductor switching device, and
an A/D converter configured to perform A/D conversion on a result of inverting and amplifying by the inverting amplifier, and sample and hold a result of the A/D conversion, based on the control signal.
5. A power conversion device comprising:
a power semiconductor switching device configured to supply constant power to a load by switching and to be turned on and off by a first control signal from an external control circuit; and
a drive circuit configured to detect an operating temperature of the power semiconductor switching device and drive the power semiconductor switching device according to a result of the detection, the drive circuit including a temperature detecting unit configured to receive a second control signal generated based on the first control signal output from the external control circuit and different from the first control signal, and detect the operating temperature of the power semiconductor switching device at timings according to the second control signal.
6. The power conversion device according to claim 5 , wherein the temperature detecting unit includes:
a comparator configured to compare an output voltage that is based on the operating temperature and output from a temperature detector configured to detect the operating temperature of the power semiconductor switching device, with a reference voltage corresponding to a predetermined temperature; and
a latch circuit configured to latch a result of the comparison by the comparator, based on the second control signal.
7. The power conversion device according to claim 6 , wherein
the temperature detecting unit includes a plurality of comparators each configured to compare the output voltage with a different respective reference voltage,
the latch circuit is configured to latch results of the comparisons by the plurality of comparators, and
the temperature detecting unit further includes a selection circuit configured to selectively output the plurality of comparison results latched by the latch circuit.
8. The power conversion device according to claim 5 , wherein the temperature detecting unit includes:
an inverting amplifier configured to invert and amplify a voltage that is based on a temperature of the power semiconductor switching device and output from a temperature detector configured to detect the temperature of the power semiconductor switching device; and
an A/D converter configured to perform A/D conversion on a result of inverting and amplifying by the inverting amplifier, and sample and hold a result of the A/D conversion result, based on the second control signal.