In-situ CVD and ALD coating of chamber to control metal contamination
Embodiments of the systems and methods herein are directed towards forming, via ALD or CVD, a protective film in-situ on a plurality of interior components of a process chamber. The interior components coated with the protective film include a chamber sidewall, a chamber bottom, a substrate support pedestal, a showerhead, and a chamber top. The protective film can be of various compositions including amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO 2 , Al 2 O 3 , AlON, HfO 2 , or Ni 3 Al, and can vary in thickness from about 80 nm to about 250 nm.
1. A method of processing a substrate, comprising:
introducing at least one gas to a process chamber;
removing, in response to the introducing of the at least one gas in the process chamber, a first protective film from a plurality of interior components of the process chamber;
forming, via ALD or CVD, in the process chamber, a second protective film on the plurality of interior components comprising a chamber sidewall, a chamber bottom, a substrate support pedestal, a showerhead, and a chamber top; and
positioning, subsequent to forming the second protective film, a substrate on the substrate support pedestal, wherein the substrate is in contact with a portion of the substrate support pedestal that does not comprise the second protective film.
2. The method of claim 1 , further comprising, prior to the forming of the second protective film, heating the process chamber to a pre-heating temperature from about 300° C. to about 600° C., wherein the forming of the second protective film occurs while the chamber is at the pre-heating temperature.
3. The method of claim 1 , further comprising, prior to the forming of the second protective film, pressurizing the chamber to a pressure from about 1 Torr to about 600 Torr.
4. The method of claim 1 , further comprising, prior to positioning the substrate on the substrate support pedestal, setting a processing temperature of the chamber from about 200° C. to about 600° C.
5. The method of claim 4 , further comprising:
subsequent to positioning the substrate, performing at least one operation in the process chamber;
subsequently, removing the substrate from the process chamber; and
cleaning the chamber, wherein cleaning the chamber removes the second protective film from the plurality of interior components of the chamber.
6. The method of claim 5 , further comprising removing the second protective film from the plurality of interior components of the process chamber using a fluorine-containing plasma.
7. The method of claim 5 , wherein the second protective film comprises amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO 2 , Al 2 O 3 , AION, HfO 2 , or Ni 3 Al.
8. A method of protecting a process chamber, comprising:
introducing at least one gas to a process chamber;
removing, in response to the introducing of the at least one gas in the process chamber, a first protective film from a plurality of interior components of the process chamber;
forming, via ALD or CVD, in the process chamber, a second protective film on the plurality of interior components, wherein the second protective film comprises amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO 2 , Al 2 O 3 , AION, HfO 2 , or Ni 3 Al; and
positioning, subsequent to forming the second protective film, a substrate on a substrate support pedestal.
9. The method of claim 8 , further comprising forming the second protective film to a thickness from 80 nm to 250 nm.
10. The method of claim 8 , wherein the first protective film comprises a first material and the second protective film comprises a second material, wherein the first material is different than the second material.
11. The method of claim 8 , wherein the first protective film comprises a first material and the second protective film comprises a second material, wherein the first material is the same as the second material.
12. The method of claim 8 , wherein the plurality of interior components of the process chamber comprise stainless steel.
13. The method of claim 8 , further comprising, prior to forming the second protective film, positioning a cover on at least a portion of the substrate support pedestal such that the second protective film is not formed on the substrate support pedestal.
14. The method of claim 8 , wherein the at least one gas comprises fluorine.
15. The method of claim 8 , further comprising, prior to forming the second protective film, heating the process chamber to a pre-heating temperature from about 300° C. to about 600° C., wherein forming the second protective film occurs while the chamber is at the pre-heating temperature.
16. A method of processing a substrate, comprising:
introducing at least one gas to a process chamber;
removing, in response to the introducing of the at least one gas in the process chamber, a first protective film from a plurality of interior components of the process chamber;
forming, via ALD or CVD, in the process chamber, a second protective film on the plurality of interior components comprising a chamber sidewall, a chamber bottom, a substrate support pedestal, a showerhead, and a chamber top, wherein the second protective film comprises amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO 2 , Al 2 O 3 , AION, HfO 2 , or Ni 3 Al; and
positioning, subsequent to forming the second protective film, a substrate on the substrate support pedestal, wherein the second protective film is not formed on a portion of the substrate support pedestal and the substrate is in contact with the portion of the substrate support pedestal that does not comprise the second protective film.
17. The method of claim 16 , further comprising, prior to forming the second protective film, heating the process chamber to a pre-heating temperature from about 300° C. to about 600° C., wherein forming the second protective film occurs while the chamber is at the pre-heating temperature.
18. The method of claim 16 , further comprising, prior to forming the second protective film, pressurizing the chamber from about 1 Torr to about 600 Torr.
19. The method of claim 16 , further comprising, prior to positioning the substrate on the substrate support pedestal, setting a processing temperature of the chamber from about 200° C. to about 600° C.
20. The method of claim 16 , further comprising, prior to positioning the substrate on the substrate support pedestal, a pressure of the chamber may be from 1 bar to about 250 bar.