Semiconductor device
A semiconductor device includes a buffer control circuit suitable for generating a buffer control signal in response to a power-down mode signal and a detection pulse, a first buffer circuit suitable for generating a first internal chip select signal by buffering a chip select signal depending on a select signal which is generated in response to the buffer control signal in a power-down mode, and a detection pulse generation circuit suitable for generating the detection pulse in response to the first internal chip select signal.
1. A semiconductor device comprising:
a buffer control circuit suitable for generating a buffer control signal in response to a power-down mode signal and a power-down mode exit signal;
a first buffer circuit suitable for generating a first internal chip select signal by buffering a chip select signal in response to the buffer control signal in a power-down mode; and
a second buffer circuit suitable for generating a second internal chip select signal by buffering the chip select signal in response to the buffer control signal in a normal operation mode.
2. The semiconductor device according to claim 1 , wherein the buffer control signal has a first logic level in the case where the power-down mode signal is enabled in the power-down mode, and has a second logic level in the case where the power-down mode exit signal is enabled in the normal operation mode.
3. The semiconductor device according to claim 1 , wherein the first buffer circuit is embodied as a CMOS (complementary metal oxide semiconductor) circuit.
4. The semiconductor device according to claim 1 , wherein the second buffer circuit is embodied by a differential amplification circuit.
5. The semiconductor device according to claim 1 , further comprising:
a command address buffer circuit suitable for generating an internal command address by buffering a command address in response to the buffer control signal.