Semiconductor memory device

1. A semiconductor memory device comprising:

a plurality of word lines;

a plurality of bit line pairs;

a plurality of memory cells that are coupled to the word lines and the bit line pairs in such a manner that one memory cell is coupled to one word line and one bit line pair;

a plurality of auxiliary line pairs that run parallel to the bit line pairs in such a manner that one auxiliary line pair runs parallel to one bit line pair;

a write driver circuit;

a write assist circuit; and

a select circuit that couples, to the write driver circuit, one bit line pair selected from the bit line pairs in accordance with a select signal, and couples, to the write assist circuit, an associated auxiliary line pair running parallel to the selected bit line pair,

wherein the write driver circuit causes one bit line of the selected bit line pair to transition from a high level to a low level in accordance with input data,

wherein the write assist circuit causes one auxiliary line of the associated auxiliary line pair to transition from a high level to a low level, the one auxiliary line of the associated auxiliary line pair being disposed in association with the one bit line placed at the low level,

wherein, when the one auxiliary line is transitioned from the high level to the low level, the one bit line transitioned to the low level is placed in a high-impedance state, and

wherein the one bit line transitions from the low level to a negative potential in accordance with the transition of the one auxiliary line from the high level to the low level.

2. A semiconductor memory device comprising:

a first memory cell;

a second memory cell;

a first bit line pair that is coupled to the first memory cell;

a second bit line pair that is coupled to the second memory cell and disposed to run parallel to the first bit line pair;

a write driver circuit;

a write assist circuit; and

a select circuit,

wherein, in accordance with a select signal, when the select circuit couples the first bit line pair to the write driver circuit and couples the second bit line pair to the write assist circuit:

the write driver circuit causes one bit line of the first bit line pair to transition from a high level to the a low level in accordance with input data; and

the write assist circuit causes one bit line of the second bit line pair to transition from a high level to a low level, the one bit line of the second bit line pair being disposed in association with the one bit line of the first bit line pair, the one bit line of the first bit line pair being placed at the low level,

wherein, when the one bit line of the second bit line pair is transitioned from the high level to the low level, the one bit line transitioned to the low level is placed in a high-impedance state, and

wherein the one bit line of the first bit line pair transitions from the low level to a negative potential in accordance with the transition of the one bit line of the second bit line pair from the high level to the low level.

3. The semiconductor memory device according to claim 2 ,

wherein, in accordance with the select signal, when the select circuit couples the second bit line pair to the write driver circuit and couples the first bit line pair to the write assist circuit:

the write driver circuit causes one bit line of the second bit line pair to transition from a high level to a low level in accordance with input data; and

the write assist circuit causes one bit line of the first bit line pair to transition from a high level to a low level, the one bit line of the first bit line pair being disposed in association with the one bit line of the second bit line pair, the one bit line of the second bit line pair being placed at the low level.

4. The semiconductor memory device according to claim 3 ,

wherein, when the one bit line of the first bit line pair is transitioned from the high level to the low level, the one bit line of the second bit line pair is placed in a high-impedance state, the one bit line of the second bit line pair being placed at the low level, and

wherein the one bit line of the second bit line pair transitions from the low level to a negative potential in accordance with the transition of the one bit line of the first bit line pair from the high level to the low level.

5. The semiconductor memory device according to claim 3 , further comprising:

a third memory cell; and

a fourth memory cell,

wherein the first bit line pair includes the one bit line and the other bit line,

wherein the second bit line pair includes the one bit line and the other bit line,

wherein the third memory cell is coupled to the one bit line of the first bit line pair and the other bit line of the second bit line pair,

wherein the fourth memory cell is coupled to the one bit line of the second bit line pair and the other bit line of the first bit line pair, and

wherein, in accordance with the select signal, the select circuit either couples the one bit line of the first bit line pair and the other bit line of the second bit line pair to the write driver circuit and couples the one bit line of the second bit line pair and the other bit line of the first bit line pair to the write assist circuit, or couples the one bit line of the second bit line pair and the other bit line of the first bit line pair to the write driver circuit and couples the one bit line of the first bit line pair and the other bit line of the second bit line pair to the write assist circuit.

6. The semiconductor memory device according to claim 5 ,

wherein the first memory cell, the second memory cell, the third memory cell, and the fourth memory cell are disposed in the order of the first memory cell, the third memory cell, the second memory cell, the fourth memory cell,

wherein a coupling section between the first memory cell and the other bit line of the second bit line pair and a coupling section between the third memory cell and the one bit line of the first bit line pair are formed of one impurity introduction layer,

wherein a coupling section between the third memory cell and the other bit line of the second bit line pair and a coupling section between the second memory cell and the other bit line of the second bit line pair are formed of one impurity introduction layer, and

wherein a coupling section between the second memory cell and the one bit line of the second bit line pair and a coupling section between the fourth memory cell and the one bit line of the second bit line pair are formed of one impurity introduction layer.

7. The semiconductor memory device according to claim 2 , further comprising:

a semiconductor substrate,

wherein a surface of the semiconductor substrate includes two P-type well regions and an N-type well region, the N-type well region being disposed between the two P-type well regions,

wherein the first memory cell and the second memory cell are formed in the two P-type well regions and the N-type well region, and

wherein the surface of the semiconductor substrate includes a power feed region for the two P-type well regions and the N-type well region, the power feed region being disposed between a region forming the first memory cell and a region forming the second memory cell.

8. The semiconductor memory device according to claim 2 , further comprising:

a semiconductor substrate,

wherein a surface of the semiconductor substrate includes a region forming the first memory cell, a region forming the second memory cell, and an input/output region, and

wherein the input/output region is disposed between the region forming the first memory cell and the region forming the second memory cell.

9. A semiconductor memory device comprising:

a first memory cell and a second memory cell that each includes a first port and a second port;

a first bit line pair that is coupled to the first port of the first memory cell;

a second bit line pair that is coupled to the first port of the second memory cell and disposed to run parallel to the first bit line pair;

a third bit line pair that is coupled to the second port of the first memory cell;

a fourth bit line pair that is coupled to the second port of the second memory cell and disposed to run parallel to the third bit line pair;

a first write circuit; and

a first select circuit,

wherein the first write circuit includes:

a write driver circuit; and

a write assist circuit, and

wherein, in accordance with a select signal, when the first select circuit couples the first bit line pair to the write driver circuit of the first write circuit and couples the second bit line pair to the write assist circuit of the first write circuit,

wherein the semiconductor memory device further includes:

a second write circuit; and

a second select circuit,

wherein the second write circuit includes:

a write driver circuit; and

a write assist circuit,

wherein, in accordance with the select signal, when the second select circuit couples the third bit line pair to the write driver circuit of the second write circuit and couples the fourth bit line pair to the write assist circuit of the second write circuit,

wherein the write driver circuit of the first write circuit causes one bit line of the first bit line pair to transition from a high level to a low level in accordance with input data, and

wherein the write assist circuit of the first write circuit causes one bit line of the second bit line pair to transition from a high level to a low level, the one bit line of the second bit line pair being disposed in association with the one bit line of the first bit line pair, the one bit line of the first bit line pair being placed at the low level,

wherein, when the one bit line of the second bit line pair is transitioned from the high level to the low level, the one bit line transitioned to the low level is placed in a high-impedance state, and

wherein the one bit line of the first bit line pair transitions from the low level to a negative potential in accordance with the transition of the one bit line of the second bit line pair from the high level to the low level.

10. The semiconductor memory device according to claim 9 ,

wherein, in accordance with the select signal, when the first select circuit couples the second bit line pair to the write driver circuit of the first write circuit and couples the first bit line pair to the write assist circuit of the first write circuit:

the write driver circuit of the first write circuit causes one bit line of the second bit line pair to transition from a high level to a low level in accordance with input data; and

the write assist circuit of the first write circuit causes one bit line of the first bit line pair to transition from a high level to a low level, the one bit line of the first bit line pair being disposed in association with the one bit line of the second bit line pair, the one bit line of the second bit line pair being placed at the low level.

11. The semiconductor memory device according to claim 10 ,

wherein, when the one bit line of the first bit line pair is transitioned from the high level to the low level, the one bit line transitioned to the low level is placed in a high-impedance state, and

wherein the one bit line of the second bit line pair transitions from the low level to a negative potential in accordance with the transition of the one bit line of the first bit line pair from the high level to the low level.