Substrate treating apparatus and substrate treating method
Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating apparatus including a spin head configured to support the substrate, a nozzle configured to discharge a chemical to the substrate located on the spin head, a first passage configured to supply a first chemical, a chemical property of which is the same as the chemical, a second passage configured to supply a second chemical, a chemical property of which is the same as the first chemical, and a discharge passage connecting the first passage and the second passage, and the nozzle.
1. A substrate treating apparatus comprising:
a spin head configured to support the substrate;
a nozzle configured to discharge a chemical to the substrate located on the spin head;
a first passage configured to supply a first chemical, a chemical composition of which is the same as the chemical;
a second passage configured to supply a second chemical, a chemical composition of which is the same as the first chemical;
a discharge passage connecting the first passage and the second passage, and the nozzle;
a first tank connected to the first passage and configured to supply the first chemical to the first passage;
a second tank connected to the second passage and configured to supply the second chemical to the second passage;
a circulation passage connected with the first tank and through which the first chemical discharged from the first tank is returned into the first tank, wherein the circulation passage is not physically connected with the second tank;
a heater connected with the circulation passage; and
an auxiliary supplementing tank connected with each of the first tank and the second tank, the auxiliary supplementing tank configured to provide each of the first tank and the second tank with the chemical.
2. The substrate treating apparatus of claim 1 , wherein a concentration of the first chemical is higher than that of the second chemical.
3. The substrate treating apparatus of claim 1 , wherein a temperature of the first chemical is higher than that of the second chemical.
4. The substrate treating apparatus of claim 1 , wherein a temperature of the first chemical is higher than a temperature of the second chemical, and the first tank supplies a larger amount of the first chemical to the nozzle when the nozzle discharges the chemical to an outer area of the substrate rather than when the nozzle discharges the chemical to a central area of the substrate.
5. The substrate treating apparatus of claim 1 , wherein a concentration of the first chemical is higher than a concentration of the second chemical, and the first tank supplies a larger amount of the first chemical to the nozzle when the nozzle discharges the chemical to an outer area of the substrate rather than when the nozzle discharges the chemical to a central area of the substrate.
6. The substrate treating apparatus of claim 1 , wherein the first tank is connected with the second tank.
7. A substrate treating apparatus comprising:
a spin head;
a nozzle configured to discharge a chemical toward the spin head;
a first passage configured to supply a first chemical toward the spin head, a chemical composition of which is the same as the chemical;
a second passage configured to supply a second chemical toward the spin head, a chemical composition of which is the same as the chemical;
a discharge passage connecting the first passage, the second passage and the nozzle, wherein the nozzle is configured to discharge the first and second chemicals at a same time;
a first tank connected to the first passage and configured to supply the first chemical to the first passage;
a second tank connected to the second passage and configured to supply the second chemical to the second passage;
a circulation passage including a first end connected with a first side of the first tank and a second end connected with a second side of the first tank, wherein the circulation passage is not physically connected with the second tank;
a heater connected with the circulation passage; and
an auxiliary supplementing tank connected with each of the first tank and the second tank, the auxiliary supplementing tank configured to provide each of the first tank and the second tank with the chemical.
8. The substrate treating apparatus of claim 7 , wherein a concentration of the first chemical is higher than that of the second chemical.
9. The substrate treating apparatus of claim 7 , wherein a temperature of the first chemical is higher than that of the second chemical.
10. The substrate treating apparatus of claim 7 , wherein a temperature of the first chemical is higher than a temperature of the second chemical, and the first tank supplies a larger amount of the first chemical to the nozzle when the nozzle discharges the chemical to an outer area of the substrate rather than when the nozzle discharges the chemical to a central area of the substrate.
11. The substrate treating apparatus of claim 7 , wherein a concentration of the first chemical is higher than a concentration of the second chemical, and the first tank supplies a larger amount of the first chemical to the nozzle when the nozzle discharges the chemical to an outer area of the substrate rather than when the nozzle discharges the chemical to a central area of the substrate.
12. A substrate treating apparatus comprising:
a spin head;
a nozzle configured to discharge a chemical to the substrate located on the spin head;
a first passage configured to supply a first chemical to the substrate, a chemical composition of which is the same as the chemical;
a second passage configured to supply a second chemical to the substrate, a chemical composition of which is the same as the chemical;
a discharge passage connecting the first passage, the second passage and the nozzle;
a first tank connected to the first passage and configured to supply the first chemical to the first passage;
a second tank connected to the second passage and configured to supply the second chemical to the second passage;
a circulation passage including a first end connected with a first side of the first tank and a second end connected with a second side of the first tank, wherein the circulation passage is not physically connected with the second tank;
a heater connected with the circulation passage between the first end of the circulation passage and the second end of the circulation passage; and
an auxiliary supplementing tank connected with each of the first tank and the second tank, the auxiliary supplementing tank configured to provide each of the first tank and the second tank with the chemical.
13. The substrate treating apparatus of claim 12 , wherein a concentration of the first chemical is higher than that of the second chemical.
14. The substrate treating apparatus of claim 12 , wherein a temperature of the first chemical is higher than that of the second chemical.
15. The substrate treating apparatus of claim 12 , wherein a temperature of the first chemical is higher than a temperature of the second chemical, and the first tank supplies a larger amount of the first chemical to the nozzle when the nozzle discharges the chemical to an outer area of the substrate rather than when the nozzle discharges the chemical to a central area of the substrate.
16. The substrate treating apparatus of claim 12 , wherein a concentration of the first chemical is higher than a concentration of the second chemical, and the first tank supplies a larger amount of the first chemical to the nozzle when the nozzle discharges the chemical to an outer area of the substrate rather than when the nozzle discharges the chemical to a central area of the substrate.
17. The substrate treating apparatus of claim 12 , further comprising a valve positioned along the first passage between the first tank and the discharge passage.