Semiconductor integrated circuit device

1. A semiconductor integrated circuit device comprising

at least one standard cell including at least one nanowire field effect transistor (FET),

the nanowire FET including:

a nanowire extending along a first direction, the nanowire being a single nanowire or including a plurality of parallelly arranged nanowires;

pads arranged at both ends of the nanowire in the first direction, having a lower surface below a lower surface of the nanowire, and connected to the nanowire; and

a gate electrode extending along a second direction perpendicular to the first direction, and surrounding a periphery of the nanowire within a predetermined range of the nanowire in the first direction, wherein:

in the standard cell, the pads are arranged at a first pitch in the first direction, and a cell width of the standard cell that is a dimension of the standard cell in the first direction is an integral multiplication of the first pitch, and

the nanowire FET includes p-type and n-type nanowire FETs, and the gate electrode in the p-type nanowire FET and the gate electrode in the n-type nanowire BET are integrally formed with each other, and extends linearly along the second direction.

2. The semiconductor integrated circuit device of claim 1 , wherein

in the standard cell, the pads have the same pad width that is a dimension of each of the pads in the first direction.

3. The semiconductor integrated circuit device of claim 1 , wherein

in the standard cell, pad intervals between adjacent ones of the pads in the first direction are the same.

4. The semiconductor integrated circuit device of claim 1 , wherein

the standard cell is provided with a p-type transistor region provided with the p-type nanowire FET, and an n-type transistor region provided with the n-type nanowire FET, the p-type and n-type transistor regions being arranged in the second direction, and

in the first direction, positions of the pads in the p-type transistor region are consistent with those of the pads in the n-type transistor region.

5. The semiconductor integrated circuit device of claim 1 , wherein

the standard cell includes first and second standard cells adjacent to each other in the first direction, and

the pad in the first standard cell and the pad in the second standard cell facing each other across a cell boundary between the first and second standard cells are arranged at the first pitch.

6. The semiconductor integrated circuit device of claim 1 , wherein

in the standard cell, the gate electrode includes a plurality of gate electrodes arranged at a second pitch in the first direction, and

the second pitch is equal to the first pitch.

7. The semiconductor integrated circuit device of claim 6 , wherein

the standard cell is provided with a p-type transistor region provided with the p-type nanowire FET, and an n-type transistor region provided with the n-type nanowire FET, the p-type and n-type transistor regions being arranged in the second direction.

8. A semiconductor integrated circuit device comprising

first and second transistors that are nanowire FETs and have the same conductivity type,

each of the first and second transistors including:

a nanowire extending along a first direction, the nanowire being a single nanowire or including a plurality of parallelly arranged nanowires;

first and second pads arranged at both ends of the nanowire in the first direction at a first pitch, having a lower surface below a lower surface of the nanowire, and connected to the nanowire;

a gate electrode extending along a second direction perpendicular to the first direction, and surrounding a periphery of the nanowire within a predetermined range of the nanowire in the first direction, wherein

the first and second transistors are connected together in series, share the second pads, and arranged adjacent to one another in the first direction.

9. The semiconductor integrated circuit device of claim 8 , wherein

the gate electrode in the first transistor and the gate electrode in the second transistor are arranged in the first direction at a second pitch, and

the second pitch is equal to the first pitch.

10. The semiconductor integrated circuit device of claim 8 , wherein

the number of the nanowires in the first transistor is different from that of the nanowires in the second transistor.

11. The semiconductor integrated circuit device of claim 8 , wherein

the first and second transistors are included in one standard cell.

12. A semiconductor integrated circuit device comprising

first and second transistors that are nanowire FETs and have the same conductivity type,

each of the first and second transistors including:

a nanowire extending along a first direction, the nanowire being a single nanowire or including a plurality of parallelly arranged nanowires;

first and second pads arranged at both ends of the nanowire in the first direction at a first pitch, having a lower surface below a lower surface of the nanowire, and connected to the nanowire;

a gate electrode extending along a second direction perpendicular to the first direction, and surrounding a periphery of the nanowire within a predetermined range of the nanowire in the first direction, wherein

the first and second transistors are connected together in parallel, share the second pads, and arranged adjacent to one another in the first direction.

13. The semiconductor integrated circuit device of claim 12 , wherein

the gate electrode in the first transistor and the gate electrode in the second transistor are arranged in the first direction at a second pitch, and

the second pitch is equal to the first pitch.

14. The semiconductor integrated circuit device of claim 12 , wherein

the number of the nanowires in the first transistor is different from that of the nanowires in the second transistor.

15. The semiconductor integrated circuit device of claim 12 , wherein

the first and second transistors are included in one standard cell.