IP Library › Granted Patent US 10,710,876
Granted Patent B2
US 10,710,876 · App. 15/303,033 · Granted Jul 14, 2020

Quantum dot glass plate and manufacturing method thereof

Inventor: Quan Li (Shenzhen, CN)
Assignee: Shenzhen China Star Optoelectronics Technology Co., ltd.
B82B1/001B32B5/00B32B7/14B32B17/06B82Y20/00B82Y40/00F21V9/30G09F9/33H01L33/505B32B2457/20B82Y30/00
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Quick Facts
Patent No.
US 10,710,876
App. No.
15/303,033
Granted
Jul 14, 2020
Kind
B2
Abstract

A quantum dot glass plate includes a first glass substrate, a second glass substrate correspondingly parallel with the first glass substrate, and a glue layer arranged between the first glass substrate and the second glass substrate, where the glue layer includes at least one glue frame arranged in a line. A shape of the first glass substrate is same as a shape as the second glass substrate, and edges of the glue layer correspond to edges of the first glass substrate and the second glass substrate.

Claims (22)

1. A quantum dot glass plate, comprising

a first glass substrate;

a second glass substrate correspondingly parallel with the first glass substrate, and a shape of the first glass substrate is same as a shape as the second glass substrate;

a glue layer arranged between the first glass substrate and the second glass substrate, and edges of the glue layer correspond to edges of the first glass substrate and the second glass substrate, wherein the first glass substrate does not contact with the second glass substrate;

wherein the glue layer comprises at least one glue frame that are lined side by side;

wherein each of the glue frames comprises at least three edge sub-frames, and heads and tails of at least three edge sub-frames are successively connected with each other;

wherein quantum dots are uniformly distributed in each of the glue frames, the first glass substrate is attached to a first surface of the glue layer, the second glass substrate is attached to a second surface of the glue layer, wherein the first surface of the glue layer is opposite to the second surface of the glue layer;

wherein the quantum dots are selected from the group consisting of copper indium diselenide material, copper indium gallium selenide material, and cadmium telluride material;

wherein the quantum dots have a particle size ranging from 1 nm to 10 nm;

wherein a width of the edge sub-frame ranges from 0.1 mm to 1 mm, a distance between any two adjacent glue frames ranges from 0.1 mm to 0.5 mm, and a distance from the edge of the glue layer to the edge of the first glass substrate ranges from 0.1 mm to 0.5 mm; and

wherein the glue frame is a rectangular ring structure, and the glue frame surrounds a periphery of the glue layer.

2. The quantum dot glass plate as claimed in claim 1 , wherein shapes and sizes of the first glass substrate and the second glass substrate are the same, and shapes and sizes of at least one or more glue frames arranged in the same glue layer are the same.

3. A manufacturing method for a quantum dot glass plate, comprising the following steps:

providing a first glass substrate and a second glass substrate that is correspondingly parallel with the first glass substrate;

arranging a glue layer in a surface of a first side of the first glass substrate, wherein the glue layer comprises a first surface and a second surface, the first surface of the glue layer is opposite to the second surface of the glue layer, the first side of the first glass substrate faces the second glass substrate, an edge of the first surface of the glue layer corresponds to an edge of the first glass substrate, the glue layer comprises at least one glue frame that are line side by side, and the glue frames are arranged side by side each of the glue frame comprises at least three edge sub-frames, and heads and tails of at least three edge sub-frames are successively connected with each other;

coating the quantum dots in each of the glue frames, wherein the glue frame surrounds a periphery of the glue layer, the quantum dots are selected from the group consisting of copper indium diselenide material, copper indium gallium selenide material, and cadmium telluride material, and the quantum dots have a particle size ranging from 1 nm to 10 nm;

attaching the second glass substrate to the second surface of the glue layer, wherein the second glass substrate does not contact with the first glass substrate;

curing the glue layer to form a complex glass plate;

cutting the complex glass plate into at least one quantum dot glass plate along connecting position of the two adjacent glue frames; and

smoothing edges of the quantum dot glass plate, wherein a width of the edge sub-frame ranges from 0.1 mm to 1 mm, a distance between any two adjacent glue frames ranges from 0.1 mm to 0.5 mm, and a distance from the edge of the glue layer to the edge of the first glass substrate ranges from 0.1 mm to 0.5 mm.

4. The manufacturing method for the quantum dot glass plate as claimed in claim 3 , wherein shapes and sizes of the first glass substrate and the second glass substrate are same, and shapes and sizes of at least one or more glue frames arranged in a same glue layer are same.

5. The manufacturing method for the quantum dot glass plate as claimed in claim 3 , wherein the glue frame is a rectangular ring structure.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 16, 2016
From: LI, QUAN
To: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
Reel/Frame 040332/0473 →
Priority Claims (1)
CN 2016 1 0255276 · Apr 21, 2016 · national
Continuity (1)
Related Publication 20170334716A1 · Nov 23, 2017