6-membered cyclic dienes as strongly reducing precursors for the growth of element films by vapor phase deposition
A method for reducing an atom to a reduced oxidation state includes a step of providing a vapor of a first compound having an atom in an oxidized state. A vapor of a reducing agent is provided. The reducing agent is selected from the group consisting of compounds described by formulae I, II, and III: where R 1 , R 2 R 3 , R 4 are each independently H, C 1-10 alkyl, C 6-14 aryl, or C 4-14 heteroaryl. The vapor of the first compound is reacted with the vapor of the reducing agent to form a second compound having the atom in a reduced state relative to the first compound.
1. A method comprising:
providing a vapor of a first compound having an atom in an oxidized state, the atom in an oxidized state being in an oxidation state greater than 0, the atom in an oxidized state being selected from the group consisting of Groups 2-14 of the Periodic Table, the lanthanides, As, Sb, Bi, and Te; and
providing a vapor of a reducing agent, the reducing agent selected from the group consisting of compounds described by formulae I, II, and III:
wherein:
R 1 , R 2 R 3 , R 4 are each independently H, C 1-10 alkyl, C 6-14 aryl, or C 4-14 heteroaryl, and
n is 0, 1, 2, 3, or 4; and
reacting the vapor of the first compound with the vapor of the reducing agent to form a second compound having the atom in a reduced state relative to the first compound.
2. The method of claim 1 wherein R 1 , R 2 are each independently H or C 1-10 alkyl.
3. The method of claim 1 wherein R 1 , R 2 are each independently hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, t-butyl, or phenyl.
4. The method of claim 1 wherein the atom in an oxidized state is Cu, Cr, Mn, Fe, Co, Ti, or Ni.
5. The method of claim 1 comprising a deposition cycle including:
a) contacting a substrate with the vapor of the first compound having an atom in an oxidized state to form a first modified surface; and
c) contacting the first modified surface with the vapor of the reducing agent.
6. The method of claim 5 wherein a metal-containing layer is deposited on the substrate.
7. The method of claim 6 wherein the metal-containing layer includes a metal atom in a zero oxidation state.
8. The method of claim 5 wherein the substrate is additionally contacted with the vapor of the first compound having an atom in an oxidized state and then the vapor of a reducing agent during a plurality of additional deposition cycles.
9. The method of claim 5 wherein the substrate is coated with from 1 to 5000 deposition cycles.
10. The method of claim 5 wherein the substrate is coated at a temperature from about 50 to 400° C.
11. The method of claim 5 wherein the substrate is contacted with a purge gas after contacting the substrate with vapor of a metal-containing compound including a metal atom in an oxidized state and before contacting the substrate with the vapor of the reducing agent.
12. The method of claim 11 wherein the substrate is contacted with the purge gas after contacting the substrate with the vapor of the reducing agent and before a subsequent step of the vapor of a first compound including an atom in an oxidized state.
13. The method of claim 5 wherein the first compound having an atom in an oxidized state is reacted with the reducing agent in a gaseous state.
14. The method of claim 1 wherein R 3 , R 4 are each independently H.
15. The method of claim 1 wherein the reducing agent has formula 3:
16. The method of claim 1 wherein the reducing agent has formula 4:
17. The method of claim 1 wherein the reducing agent has formula 6: