IP Library › Granted Patent US 10,712,178
Granted Patent B2
US 10,712,178 · App. 16/123,513 · Granted Jul 14, 2020

Position detection device for detecting position of an object moving in a predetermined direction, and a magnetic sensor for use with the position detection device

Inventors: Keisuke Uchida (Tokyo, JP); Tsuyoshi Umehara (Tokyo, JP); Toshihide Suto (Tokyo, JP); Hiraku Hirabayashi (Tokyo, JP)
Assignee: TDK CORPORATION
G01D5/16G01D5/145
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Quick Facts
Patent No.
US 10,712,178
App. No.
16/123,513
Granted
Jul 14, 2020
Kind
B2
Abstract

A position detection device includes a first magnetic field generation unit for generating a first magnetic field, a second magnetic field generation unit for generating a second magnetic field, and a magnetic sensor. The position of the second magnetic field generation unit relative to the first magnetic field generation unit is variable. The magnetic sensor detects the direction of a target magnetic field at a detection position in a reference plane. The target magnetic field is a composite magnetic field of first and second magnetic field components which are respective components of the first and second magnetic fields parallel to the reference plane. The magnetic sensor includes a magnetoresistive element including a free layer and a magnetization pinned layer. In the reference plane, two directions orthogonal to the magnetization direction of the magnetization pinned layer are each different from both of directions of the first and second magnetic field components.

Claims (72)

1. A position detection device for detecting a position of an object moving in a predetermined direction, comprising:

a first magnetic field generation unit for generating a first magnetic field;

a second magnetic field generation unit for generating a second magnetic field, the second magnetic field generation unit being provided such that its position relative to the first magnetic field generation unit is variable; and

a magnetic sensor for generating a detection signal corresponding to a direction of a detection-target magnetic field at a detection position in a reference plane, wherein

the detection-target magnetic field is a composite magnetic field of a first magnetic field component and a second magnetic field component,

the first magnetic field component is a component of the first magnetic field at the detection position, the component of the first magnetic field being parallel to the reference plane,

the second magnetic field component is a component of the second magnetic field at the detection position, the component of the second magnetic field being parallel to the reference plane,

the first and second magnetic field generation units are configured so that when the position of the object varies, a position of the second magnetic field generation unit relative to the first magnetic field generation unit varies, and further configured so that when the position of the second magnetic field generation unit relative to the first magnetic field generation unit varies, a strength of the second magnetic field component varies whereas none of a strength and direction of the first magnetic field component and a direction of the second magnetic field component vary,

the detection signal varies in value according to the position of the second magnetic field generation unit relative to the first magnetic field generation unit,

the magnetic sensor includes at least one magnetoresistive element,

the least one magnetoresistive element includes a magnetization pinned layer having a magnetization whose direction is fixed, and a free layer having a magnetization whose direction is variable according to the direction of the detection-target magnetic field,

the reference plane is a plane that contains the direction of the magnetization of the magnetization pinned layer and the direction of the detection-target magnetic field, and

in the reference plane, each of two directions orthogonal to the direction of the magnetization of the magnetization pinned layer is different from both of the direction of the first magnetic field component and the direction of the second magnetic field component.

2. The position detection device according to claim 1 , wherein the direction of the second magnetic field component is orthogonal to the direction of the first magnetic field component.

3. The position detection device according to claim 1 , wherein a variation in the position of the second magnetic field generation unit relative to the first magnetic field generation unit varies a distance between the detection position and the second magnetic field generation unit.

4. The position detection device according to claim 1 , wherein one of the two directions orthogonal to the direction of the magnetization of the magnetization pinned layer is contained in a variable range of the direction of the detection-target magnetic field, the variable range corresponding to a movable range of the position of the second magnetic field generation unit relative to the first magnetic field generation unit.

5. The position detection device according to claim 4 , wherein the one of the two directions orthogonal to the direction of the magnetization of the magnetization pinned layer is the same as a direction in the middle of the variable range of the direction of the detection-target magnetic field.

6. The position detection device according to claim 4 , wherein, when the position of the second magnetic field generation unit relative to the first magnetic field generation unit is in the middle of the movable range of the position of the second magnetic field generation unit relative to the first magnetic field generation unit, the direction of the detection-target magnetic field is the same as the one of the two directions orthogonal to the direction of the magnetization of the magnetization pinned layer.

7. The position detection device according to claim 1 , wherein

the at least one magnetoresistive element is at least one first magnetoresistive element and at least one second magnetoresistive element,

the magnetic sensor further includes a power supply port configured to receive a predetermined voltage, a ground port connected to a ground, and an output port,

the at least one first magnetoresistive element is provided between the power supply port and the output port,

the at least one second magnetoresistive element is provided between the output port and the ground port,

the magnetization of the magnetization pinned layer of the at least one first magnetoresistive element is in a first direction,

the magnetization of the magnetization pinned layer of the at least one second magnetoresistive element is in a second direction opposite to the first direction, and

the detection signal depends on an electric potential at the output port.

8. The position detection device according to claim 1 , wherein

the at least one magnetoresistive element is at least one first magnetoresistive element, at least one second magnetoresistive element, at least one third magnetoresistive element, and at least one fourth magnetoresistive element,

the magnetic sensor further includes a power supply port configured to receive a predetermined voltage, a ground port connected to a ground, a first output port, and a second output port,

the at least one first magnetoresistive element is provided between the power supply port and the first output port,

the at least one second magnetoresistive element is provided between the first output port and the ground port,

the at least one third magnetoresistive element is provided between the power supply port and the second output port,

the at least one fourth magnetoresistive element is provided between the second output port and the ground port,

the magnetization of the magnetization pinned layer of the at least one first magnetoresistive element and the magnetization of the magnetization pinned layer of the at least one fourth magnetoresistive element are in a first direction,

the magnetization of the magnetization pinned layer of the at least one second magnetoresistive element and the magnetization of the magnetization pinned layer of the at least one third magnetoresistive element are in a second direction opposite to the first direction, and

the detection signal depends on a potential difference between the first output port and the second output port.

9. The position detection device according to claim 1 , wherein

the first magnetic field generation unit includes two magnets disposed at different positions, and

the first magnetic field is a composite of two magnetic fields that are respectively generated by the two magnets.

10. The position detection device according to claim 1 , further comprising a first holding member for holding the first magnetic field generation unit, and a second holding member for holding the second magnetic field generation unit, the second holding member being provided such that its position is variable in one direction relative to the first holding member.

11. The position detection device according to claim 10 , wherein

the object is a lens, and

the second holding member is configured to hold the lens, and is provided to be variable in position relative to the first holding member, the position of the second holding member being variable in a direction of an optical axis of the lens.

12. A magnetic sensor for use with a position detection device for detecting a position of an object moving in a predetermined direction, the magnetic sensor being configured to generate, at a detection position in a reference plane, a detection signal corresponding to a direction of a detection-target magnetic field that varies within a variable range below 90° in the reference plane, wherein

the position detection device includes: a first magnetic field generation unit for generating a first magnetic field; and a second magnetic field generation unit for generating a second magnetic field, the second magnetic field generation unit being provided such that its position relative to the first magnetic field generation unit is variable,

the detection-target magnetic field is a composite magnetic field of a first magnetic field component and a second magnetic field component,

the first magnetic field component is a component of the first magnetic field at the detection position, the component of the first magnetic field being parallel to the reference plane,

the second magnetic field component is a component of the second magnetic field at the detection position, the component of the second magnetic field being parallel to the reference plane,

the first and second magnetic field generation units are configured so that when the position of the object varies, a position of the second magnetic field generation unit relative to the first magnetic field generation unit varies, and further configured so that when the position of the second magnetic field generation unit relative to the first magnetic field generation unit varies, a strength of the second magnetic field component varies whereas none of a strength and direction of the first magnetic field component and a direction of the second magnetic field component vary, and

the detection signal varies in value according to the position of the second magnetic field generation unit relative to the first magnetic field generation unit,

the magnetic sensor comprising at least one magnetoresistive element, the at least one magnetoresistive element including:

a magnetization pinned layer having a magnetization whose direction is fixed in the reference plane such that one of two directions orthogonal to the direction of the magnetization of the magnetization pinned layer is contained in the variable range of the direction of the detection-target magnetic field; and

a free layer having a magnetization whose direction is variable according to the direction of the detection-target magnetic field.

13. The magnetic sensor according to claim 12 , wherein the one of the two directions orthogonal to the direction of the magnetization of the magnetization pinned layer is the same as a direction in the middle of the variable range of the direction of the detection-target magnetic field.

14. The magnetic sensor according to claim 12 , wherein

the at least one magnetoresistive element is at least one first magnetoresistive element and at least one second magnetoresistive element,

the magnetic sensor further includes a power supply port configured to receive a predetermined voltage, a ground port connected to a ground, and an output port,

the at least one first magnetoresistive element is provided between the power supply port and the output port,

the at least one second magnetoresistive element is provided between the output port and the ground port,

the magnetization of the magnetization pinned layer of the at least one first magnetoresistive element is in a first direction,

the magnetization of the magnetization pinned layer of the at least one second magnetoresistive element is in a second direction opposite to the first direction, and

the detection signal depends on an electric potential at the output port.

15. The magnetic sensor according to claim 12 , wherein

the at least one magnetoresistive element is at least one first magnetoresistive element, at least one second magnetoresistive element, at least one third magnetoresistive element, and at least one fourth magnetoresistive element,

the magnetic sensor further includes a power supply port configured to receive a predetermined voltage, a ground port connected to a ground, a first output port, and a second output port,

the at least one first magnetoresistive element is provided between the power supply port and the first output port,

the at least one second magnetoresistive element is provided between the first output port and the ground port,

the at least one third magnetoresistive element is provided between the power supply port and the second output port,

the at least one fourth magnetoresistive element is provided between the second output port and the ground port,

the magnetization of the magnetization pinned layer of the at least one first magnetoresistive element and the magnetization of the magnetization pinned layer of the at least one fourth magnetoresistive element are in a first direction,

the magnetization of the magnetization pinned layer of the at least one second magnetoresistive element and the magnetization of the magnetization pinned layer of the at least one third magnetoresistive element are in a second direction opposite to the first direction, and

the detection signal depends on a potential difference between the first output port and the second output port.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 6, 2018
From: UCHIDA, KEISUKE; UMEHARA, TSUYOSHI; SUTO, TOSHIHIDE; HIRABAYASHI, HIRAKU
To: TDK CORPORATION
Reel/Frame 046803/0888 →
Priority Claims (1)
JP 2017-210918 · Oct 31, 2017 · national
Continuity (1)
Related Publication 20190128699A1 · May 2, 2019
Cited By (3)
US 12,188,787 US 12,483,803 US 12,517,248