Layout pattern for magnetoresistive random access memory

1. A layout pattern for magnetoresistive random access memory (MRAM), comprising:

a first magnetic tunneling junction (MTJ) pattern on a substrate;

a second MTJ pattern adjacent to the first MTJ pattern; and

a first metal interconnection pattern between the first MTJ pattern and the second MTJ pattern, wherein the first MTJ pattern, the first metal interconnection pattern, and the second MTJ pattern comprise a staggered arrangement, the first MTJ pattern comprises a circle while the first metal interconnection pattern comprises an ellipse, and the first MTJ pattern and the second MTJ pattern are on a same level.

2. The layout pattern for MRAM of claim 1 , wherein the first metal interconnection pattern is disposed along a first direction relative to the first MTJ pattern and the second MTJ pattern is disposed along a second direction relative to the first metal interconnection.

3. The layout pattern for MRAM of claim 2 , wherein the second MTJ pattern is disposed along a third direction relative to the first MTJ pattern.

4. The layout pattern for MRAM of claim 3 , wherein an angle included by the first direction and the third direction is less than 90 degrees.

5. The layout pattern for MRAM of claim 3 , wherein the first direction, the second direction, and the third direction comprise a triangle.

6. The layout pattern for MRAM of claim 3 , further comprising a second metal interconnection pattern disposed along the first direction relative to the second MTJ pattern.

7. The layout pattern for MRAM of claim 6 , wherein the second metal interconnection pattern is disposed along the third direction relative to the first metal interconnection pattern.

8. The layout pattern for MRAM of claim 6 , further comprising a third metal interconnection pattern disposed along the first direction and around the second MTJ pattern and the second metal interconnection pattern.

9. The layout pattern for MRAM of claim 8 , wherein the third metal interconnection pattern comprises a rectangle.

10. A layout pattern for magnetoresistive random access memory (MRAM), comprising:

a magnetic tunneling junction (MTJ) pattern on a substrate, wherein the MTJ pattern comprises a first L-shape; and

a first metal interconnection pattern adjacent to the MTJ pattern, wherein the first metal interconnection pattern comprises a second L-shape.

11. The layout pattern for MRAM of claim 10 , wherein the MTJ pattern comprises a first portion extending along a first direction and a second portion extending along a second direction and the first metal interconnection pattern comprises a third portion extending along the first direction and a fourth portion extending along the second direction.

12. The layout pattern for MRAM of claim 11 , wherein the first direction is orthogonal to the second direction.

13. The layout pattern for MRAM of claim 11 , wherein the first portion comprises a first via pattern and the third portion comprises a second via pattern.

14. The layout pattern for MRAM of claim 13 , wherein the first via pattern and the second via pattern are disposed diagonally.

15. The layout pattern for MRAM of claim 14 , wherein each of the first via pattern and the second via pattern comprises a circle.

16. The layout pattern for MRAM of claim 10 , further comprising a second metal interconnection pattern adjacent to two sides of the MTJ pattern.

17. The layout pattern for MRAM of claim 16 , wherein the second metal interconnection pattern comprises a rectangle.

18. The layout pattern for MRAM of claim 10 , wherein the MTJ pattern and the first metal interconnection pattern are on a same level.