IP Library › Granted Patent US 10,715,093
Granted Patent B2
US 10,715,093 · App. 16/284,002 · Granted Jul 14, 2020

Power amplifier module

Inventors: Fuminori Morisawa (Kyoto, JP); Kenji Mukai (Kyoto, JP); Yuri Honda (Kyoto, JP)
Assignee: MURATA MANUFACTURING CO., LTD.
H03F3/245H03F1/523H03F3/193
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Quick Facts
Patent No.
US 10,715,093
App. No.
16/284,002
Granted
Jul 14, 2020
Kind
B2
Abstract

A power amplifier module includes a first transistor that amplifies and outputs a radio frequency signal, a second transistor smaller in size than the first transistor and connected in parallel with the first transistor, a third transistor that supplies a bias current to the first and second transistors, a current detection circuit that detects a current flowing through a collector of the second transistor, and a bias control circuit that controls the bias current supplied from the third transistor to the first and second transistors by supplying a current corresponding to a detection result of the current detection circuit to a collector or a drain of the third transistor. In a case that a current flowing through the collector of the second transistor is larger than a predetermined threshold value, the bias control circuit reduces the current supplied to the collector or the drain of the third transistor.

Claims (65)

1. A power amplifier module comprising:

a first transistor that amplifies and outputs a radio frequency signal;

a second transistor smaller in size than the first transistor and connected in parallel with the first transistor;

a third transistor that supplies a bias current to the first and second transistors;

a current detection circuit that detects a current flowing through a collector of the second transistor; and

a bias control circuit that controls the bias current supplied from the third transistor to the first and second transistors by supplying a current corresponding to a detection result of the current detection circuit to a collector or a drain of the third transistor, wherein

in a case that a current flowing through the collector of the second transistor is larger than a predetermined threshold value, the bias control circuit reduces the current supplied to the collector or the drain of the third transistor.

2. The power amplifier module according to claim 1 , wherein

the current detection circuit generates a detection voltage corresponding to a current flowing through the collector of the second transistor.

3. The power amplifier module according to claim 2 , wherein

the current detection circuit includes a detection resistor for generating a detection voltage corresponding to the current flowing through the collector of the second transistor, and

the detection resistor is connected in series with the second transistor.

4. The power amplifier module according to claim 3 , wherein

the detection resistor is connected to an emitter of the second transistor.

5. The power amplifier module according to claim 3 , wherein

the detection resistor is connected to the collector of the second transistor.

6. The power amplifier module according to claim 2 , wherein

the current detection circuit further includes:

a fourth transistor connected in series with the second transistor;

a fifth transistor connected in current mirror connection with the fourth transistor; and

a detection resistor for generating a detection voltage corresponding to a current flowing through the collector of the second transistor, the detection resistor being connected in series with the fifth transistor.

7. The power amplifier module according to claim 2 , wherein

the bias control circuit includes:

a reference voltage generation circuit for generating a reference voltage of a predetermined level;

a comparison circuit for outputting a voltage difference signal based on a difference between the detection voltage and the reference voltage; and

a bias current control circuit for supplying a current corresponding to the voltage difference signal to the collector of the third transistor.

8. The power amplifier module according to claim 3 , wherein

the bias control circuit includes:

a reference voltage generation circuit for generating a reference voltage of a predetermined level;

a comparison circuit for outputting a voltage difference signal based on a difference between the detection voltage and the reference voltage; and

a bias current control circuit for supplying a current corresponding to the voltage difference signal to the collector of the third transistor.

9. The power amplifier module according to claim 6 , wherein

the bias control circuit includes:

a reference voltage generation circuit for generating a reference voltage of a predetermined level;

a comparison circuit for outputting a voltage difference signal based on a difference between the detection voltage and the reference voltage; and

a bias current control circuit for supplying a current corresponding to the voltage difference signal to the collector of the third transistor.

10. The power amplifier module according to claim 7 , wherein

the comparison circuit includes a differential amplifier having:

a non-inverting input terminal to which the detection voltage is applied;

an inverting input terminal to which the reference voltage is applied; and

an output terminal for amplifying a difference between the detection voltage and the reference voltage at a predetermined ratio and outputting an amplified voltage difference as the voltage difference signal.

11. The power amplifier module according to claim 7 , wherein

the comparison circuit includes a differential amplifier having:

a non-inverting input terminal to which the reference voltage is applied;

an inverting input terminal to which the detection voltage is applied; and

an output terminal for amplifying a difference between the reference voltage and the detection voltage at a predetermined ratio and outputting an amplified voltage difference as the voltage difference signal.

12. The power amplifier module according to claim 7 , wherein

in a case that the current flowing through the collector of the second transistor is larger than the predetermined threshold value, the bias current control circuit reduces, based on the voltage difference signal output from the comparison circuit, the current supplied to the collector of the third transistor.

13. The power amplifier module according to claim 10 , wherein

in a case that the current flowing through the collector of the second transistor is larger than the predetermined threshold value, the bias current control circuit reduces, based on the voltage difference signal output from the comparison circuit, the current supplied to the collector of the third transistor.

14. The power amplifier module according to claim 11 , wherein

in a case that the current flowing through the collector of the second transistor is larger than the predetermined threshold value, the bias current control circuit reduces, based on the voltage difference signal output from the comparison circuit, the current supplied to the collector of the third transistor.

15. The power amplifier module according to claim 7 , wherein

the bias current control circuit includes:

a constant current source for generating a constant current;

an extraction circuit for extracting a current corresponding to the voltage difference signal from the constant current; and

a current supply circuit for supplying, to the collector of the third transistor, a current obtained by subtracting the current extracted by the extraction circuit from the constant current generated by the constant current source.

16. The power amplifier module according to claim 7 , wherein

the bias control circuit is configured to set a set value for each band of the radio frequency signal or each mode with respect to the reference voltage of the predetermined level in the reference voltage generation circuit.

17. The power amplifier module according to claim 16 , wherein

the bias control circuit is configured to switch a power mode of the power amplifier module between a high power mode and a low power mode.

18. The power amplifier module according to claim 7 , wherein

the bias control circuit is configured to set, by a digital signal, a set value for each band of the radio frequency signal or each mode with respect to the reference voltage of the predetermined level in the reference voltage generation circuit.

19. The power amplifier module according to claim 18 , wherein

the bias control circuit is configured to switch a power mode of the power amplifier module between a high power mode and a low power mode.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 25, 2019
From: MORISAWA, FUMINORI; MUKAI, KENJI; HONDA, YURI
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 048425/0187 →
Priority Claims (2)
JP 2018-042878 · Mar 9, 2018 · national
JP 2019-003806 · Jan 11, 2019 · national
Continuity (1)
Related Publication 20190280658A1 · Sep 12, 2019
Cited By (1)
US 12,712,502