Substrate treating method and semiconductor device manufacturing method
According to one embodiment, a substrate treating method includes: providing a first liquid onto a pattern on a substrate; providing, after the first liquid is provided, a second liquid containing a first substance to form a film containing the first substance on the pattern; providing, after the second liquid is provided onto the pattern, a third liquid; turning the third liquid into gas; and turning, after the third liquid is turned into gas, the film into gas.
1. A substrate treating method comprising:
providing a first liquid onto a pattern on a substrate;
providing, after the first liquid is provided, a second liquid containing a first substance to form a film containing the first substance on the pattern;
providing, after the second liquid is provided, a third liquid onto the pattern;
turning the third liquid into gas; and
turning, after the third liquid is turned into gas, the film into gas.
2. The method according to claim 1 , wherein the turning the film into gas comprises leaving the substrate in air.
3. The method according to claim 1 , wherein the turning the film into gas comprises heat or steam treatment.
4. The method according to claim 1 , wherein the first substance and the film comprise boron.
5. The method according to claim 1 , wherein the first substance comprises at least one of trimethoxyboron, triethoxyboron, trimethylboron, triethylboron, and triethylamine borane.
6. The method according to claim 1 , wherein the second liquid does not comprise water molecules.
7. The method according to claim 1 , wherein
the second liquid is provided while the first liquid is on the pattern, and
the third liquid is provided while the second liquid is on the pattern.
8. The method according to claim 1 , further comprising providing a fourth liquid onto the pattern,
wherein the first liquid is provided after the fourth liquid is provided.
9. The method according to claim 8 , wherein the first liquid is provided while the fourth liquid is on the pattern.
10. The method according to claim 1 , wherein the first substance reacts with water to form the film.
11. The method according to claim 1 , wherein the first liquid and the third liquid do not comprise the first substance.
12. The method according to claim 1 , wherein the first liquid and the third liquid do not comprise water molecules contents.
13. The method according to claim 1 , wherein the first liquid, the second liquid, and the third liquid comprise a same solvent.
14. The method according to claim 1 , wherein the pattern comprises a plurality of projections each extending in a first direction, the projections being arranged along a second direction intersecting the first direction.
15. A semiconductor device manufacturing method comprising:
forming a pattern on a substrate;
providing a first liquid onto the pattern;
providing, after the first liquid is provided, a second liquid containing a first substance to form a film containing the first substance on the pattern;
providing, after the second liquid is provided, a third liquid onto the pattern;
turning the third liquid into gas; and
turning, after the third liquid is turned into gas, the film into gas.
16. The method according to claim 15 , wherein
the second liquid is provided while the first liquid is on the pattern, and
the third liquid is provided while the second liquid is on the pattern.
17. The method according to claim 15 , further comprising providing a fourth liquid onto the pattern,
wherein the first liquid is provided after the fourth liquid is provided.
18. The method according to claim 15 , wherein the first substance and the film comprise boron.
19. The method according to claim 15 , wherein the first substance comprises at least one of trimethoxyboron, triethoxyboron, trimethylboron, triethylboron, and triethylamine borane.
20. The method according to claim 15 , wherein
the second liquid is provided while the first liquid is on the pattern, and
the third liquid is provided while the second liquid is on the pattern.